NL1025018A1 - Method and mask for characterizing a lens system. - Google Patents
Method and mask for characterizing a lens system.Info
- Publication number
- NL1025018A1 NL1025018A1 NL1025018A NL1025018A NL1025018A1 NL 1025018 A1 NL1025018 A1 NL 1025018A1 NL 1025018 A NL1025018 A NL 1025018A NL 1025018 A NL1025018 A NL 1025018A NL 1025018 A1 NL1025018 A1 NL 1025018A1
- Authority
- NL
- Netherlands
- Prior art keywords
- substrate
- image
- lens
- auxiliary
- mask
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
<P>PROBLEM TO BE SOLVED: To present a method that further improves a determination of a distortion produced by a lens' faults while image-forming a mask structure on a substrate. <P>SOLUTION: A mask with a structural arrangement which has a structure and an auxiliary structure assigned to it is projected onto a substrate. The structure has a width greater than the resolution limit of an exposure device, and the auxiliary structure has a width projected onto the substrate, which is smaller than its resolution limit. Exposure is selected such that underexposure arises, and after the development step, at least one of the auxiliary structures is generated onto the substrate. An image structure that is image-formed out of the auxiliary structure is detected using a microscope. Depending on the orientation of the auxiliary structure toward the structure, the width of the image-formed structure is amplified or attenuated by a lens' aberration that operates while an image is formed based on a lens system, in which case the attenuation may cause non-formation on the substrate. Accordingly, the detection brings about information on the direction and intensity of the lens aberration of a lens system used. <P>COPYRIGHT: (C)2004,JPO&NCIPI
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10258423 | 2002-12-13 | ||
DE2002158423 DE10258423B4 (en) | 2002-12-13 | 2002-12-13 | Method for characterizing a lens system |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1025018A1 true NL1025018A1 (en) | 2004-09-09 |
NL1025018C2 NL1025018C2 (en) | 2006-05-30 |
Family
ID=32730540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1025018A NL1025018C2 (en) | 2002-12-13 | 2003-12-12 | Method and mask for characterizing a lens system. |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3998633B2 (en) |
DE (1) | DE10258423B4 (en) |
NL (1) | NL1025018C2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7642019B2 (en) * | 2005-04-15 | 2010-01-05 | Samsung Electronics Co., Ltd. | Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore |
ATE467153T1 (en) * | 2005-12-09 | 2010-05-15 | Imec | METHOD AND DEVICES FOR LITHOGRAPHY |
WO2008153023A1 (en) * | 2007-06-11 | 2008-12-18 | Nikon Corporation | Measuring member, sensor, measuring method, exposure apparatus, exposure method, and device producing method |
JP2012248676A (en) * | 2011-05-27 | 2012-12-13 | Nuflare Technology Inc | Euv mask and manufacturing method therefor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5087537A (en) * | 1989-10-11 | 1992-02-11 | International Business Machines Corporation | Lithography imaging tool and related photolithographic processes |
FR2755238B1 (en) * | 1996-10-30 | 1999-01-15 | Sgs Thomson Microelectronics | CHARACTERIZATION METHOD OF A PHOTOREPECTOR |
JPH11184070A (en) * | 1997-12-24 | 1999-07-09 | Toshiba Corp | Aberration measurement method and photomask for aberration measurement |
JP3264368B2 (en) * | 1998-10-16 | 2002-03-11 | 日本電気株式会社 | Adjustment method of reduction projection type exposure apparatus |
US6396569B2 (en) * | 1999-09-02 | 2002-05-28 | Texas Instruments Incorporated | Image displacement test reticle for measuring aberration characteristics of projection optics |
JP3344403B2 (en) * | 2000-03-03 | 2002-11-11 | 日本電気株式会社 | Optical aberration measuring mask and optical aberration measuring method |
US6335130B1 (en) * | 2000-05-01 | 2002-01-01 | Asml Masktools Netherlands B.V. | System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features |
JP2002131185A (en) * | 2000-10-20 | 2002-05-09 | Nec Corp | Mask for measuring coma aberration and measuring method of coma aberration |
DE10127547C1 (en) * | 2001-06-05 | 2003-03-20 | Infineon Technologies Ag | Procedure for performing a rule-based OPC with simultaneous use of scatterbars |
-
2002
- 2002-12-13 DE DE2002158423 patent/DE10258423B4/en not_active Expired - Fee Related
-
2003
- 2003-12-12 NL NL1025018A patent/NL1025018C2/en not_active IP Right Cessation
- 2003-12-15 JP JP2003417355A patent/JP3998633B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3998633B2 (en) | 2007-10-31 |
JP2004200691A (en) | 2004-07-15 |
DE10258423A1 (en) | 2004-08-19 |
NL1025018C2 (en) | 2006-05-30 |
DE10258423B4 (en) | 2005-08-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20060329 |
|
PD2B | A search report has been drawn up | ||
VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20080701 |