NL1025018A1 - Method and mask for characterizing a lens system. - Google Patents

Method and mask for characterizing a lens system.

Info

Publication number
NL1025018A1
NL1025018A1 NL1025018A NL1025018A NL1025018A1 NL 1025018 A1 NL1025018 A1 NL 1025018A1 NL 1025018 A NL1025018 A NL 1025018A NL 1025018 A NL1025018 A NL 1025018A NL 1025018 A1 NL1025018 A1 NL 1025018A1
Authority
NL
Netherlands
Prior art keywords
substrate
image
lens
auxiliary
mask
Prior art date
Application number
NL1025018A
Other languages
Dutch (nl)
Other versions
NL1025018C2 (en
Inventor
Uwe Paul Schroeder
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of NL1025018A1 publication Critical patent/NL1025018A1/en
Application granted granted Critical
Publication of NL1025018C2 publication Critical patent/NL1025018C2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To present a method that further improves a determination of a distortion produced by a lens' faults while image-forming a mask structure on a substrate. <P>SOLUTION: A mask with a structural arrangement which has a structure and an auxiliary structure assigned to it is projected onto a substrate. The structure has a width greater than the resolution limit of an exposure device, and the auxiliary structure has a width projected onto the substrate, which is smaller than its resolution limit. Exposure is selected such that underexposure arises, and after the development step, at least one of the auxiliary structures is generated onto the substrate. An image structure that is image-formed out of the auxiliary structure is detected using a microscope. Depending on the orientation of the auxiliary structure toward the structure, the width of the image-formed structure is amplified or attenuated by a lens' aberration that operates while an image is formed based on a lens system, in which case the attenuation may cause non-formation on the substrate. Accordingly, the detection brings about information on the direction and intensity of the lens aberration of a lens system used. <P>COPYRIGHT: (C)2004,JPO&amp;NCIPI
NL1025018A 2002-12-13 2003-12-12 Method and mask for characterizing a lens system. NL1025018C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10258423 2002-12-13
DE2002158423 DE10258423B4 (en) 2002-12-13 2002-12-13 Method for characterizing a lens system

Publications (2)

Publication Number Publication Date
NL1025018A1 true NL1025018A1 (en) 2004-09-09
NL1025018C2 NL1025018C2 (en) 2006-05-30

Family

ID=32730540

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1025018A NL1025018C2 (en) 2002-12-13 2003-12-12 Method and mask for characterizing a lens system.

Country Status (3)

Country Link
JP (1) JP3998633B2 (en)
DE (1) DE10258423B4 (en)
NL (1) NL1025018C2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7642019B2 (en) * 2005-04-15 2010-01-05 Samsung Electronics Co., Ltd. Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore
ATE467153T1 (en) * 2005-12-09 2010-05-15 Imec METHOD AND DEVICES FOR LITHOGRAPHY
WO2008153023A1 (en) * 2007-06-11 2008-12-18 Nikon Corporation Measuring member, sensor, measuring method, exposure apparatus, exposure method, and device producing method
JP2012248676A (en) * 2011-05-27 2012-12-13 Nuflare Technology Inc Euv mask and manufacturing method therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087537A (en) * 1989-10-11 1992-02-11 International Business Machines Corporation Lithography imaging tool and related photolithographic processes
FR2755238B1 (en) * 1996-10-30 1999-01-15 Sgs Thomson Microelectronics CHARACTERIZATION METHOD OF A PHOTOREPECTOR
JPH11184070A (en) * 1997-12-24 1999-07-09 Toshiba Corp Aberration measurement method and photomask for aberration measurement
JP3264368B2 (en) * 1998-10-16 2002-03-11 日本電気株式会社 Adjustment method of reduction projection type exposure apparatus
US6396569B2 (en) * 1999-09-02 2002-05-28 Texas Instruments Incorporated Image displacement test reticle for measuring aberration characteristics of projection optics
JP3344403B2 (en) * 2000-03-03 2002-11-11 日本電気株式会社 Optical aberration measuring mask and optical aberration measuring method
US6335130B1 (en) * 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
JP2002131185A (en) * 2000-10-20 2002-05-09 Nec Corp Mask for measuring coma aberration and measuring method of coma aberration
DE10127547C1 (en) * 2001-06-05 2003-03-20 Infineon Technologies Ag Procedure for performing a rule-based OPC with simultaneous use of scatterbars

Also Published As

Publication number Publication date
JP3998633B2 (en) 2007-10-31
JP2004200691A (en) 2004-07-15
DE10258423A1 (en) 2004-08-19
NL1025018C2 (en) 2006-05-30
DE10258423B4 (en) 2005-08-18

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20060329

PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20080701