MY6900294A - Semiconductor devices and methods of making same - Google Patents

Semiconductor devices and methods of making same

Info

Publication number
MY6900294A
MY6900294A MY1969294A MY6900294A MY6900294A MY 6900294 A MY6900294 A MY 6900294A MY 1969294 A MY1969294 A MY 1969294A MY 6900294 A MY6900294 A MY 6900294A MY 6900294 A MY6900294 A MY 6900294A
Authority
MY
Malaysia
Prior art keywords
methods
semiconductor devices
making same
making
same
Prior art date
Application number
MY1969294A
Other languages
English (en)
Original Assignee
Texas Instruments Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Incorporated filed Critical Texas Instruments Incorporated
Publication of MY6900294A publication Critical patent/MY6900294A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
MY1969294A 1960-05-02 1969-12-31 Semiconductor devices and methods of making same MY6900294A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26135A US3130377A (en) 1960-05-02 1960-05-02 Semiconductor integrated circuit utilizing field-effect transistors
US8725861A 1961-02-06 1961-02-06
US377710A US3211972A (en) 1960-05-02 1964-06-24 Semiconductor networks

Publications (1)

Publication Number Publication Date
MY6900294A true MY6900294A (en) 1969-12-31

Family

ID=27362700

Family Applications (2)

Application Number Title Priority Date Filing Date
MY1969294A MY6900294A (en) 1960-05-02 1969-12-31 Semiconductor devices and methods of making same
MY1969289A MY6900289A (en) 1960-05-02 1969-12-31 Semiconductor devices and methods of making same

Family Applications After (1)

Application Number Title Priority Date Filing Date
MY1969289A MY6900289A (en) 1960-05-02 1969-12-31 Semiconductor devices and methods of making same

Country Status (8)

Country Link
US (2) US3130377A (en:Method)
CH (2) CH400370A (en:Method)
DE (2) DE1514842B2 (en:Method)
FR (1) FR1313638A (en:Method)
GB (2) GB988902A (en:Method)
LU (1) LU41205A1 (en:Method)
MY (2) MY6900294A (en:Method)
NL (2) NL274363A (en:Method)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE623677A (en:Method) * 1961-10-20
NL128995C (en:Method) * 1962-08-03
NL301883A (en:Method) * 1962-12-17
US3271633A (en) * 1963-01-29 1966-09-06 Motorola Inc Integrated field effect device with series connected channel
US3243732A (en) * 1963-02-19 1966-03-29 Rca Corp Semiconductor circuits exhibiting nshaped transconductance characteristic utilizing unipolar field effect and bipolar transistors
FR1358573A (fr) * 1963-03-06 1964-04-17 Csf Circuit électrique intégré
GB1093124A (en) * 1963-07-26 1967-11-29 Texas Instruments Ltd Field-effect transistor switches
NL143074B (nl) * 1963-12-13 1974-08-15 Philips Nv Transistor.
US3327181A (en) * 1964-03-24 1967-06-20 Crystalonics Inc Epitaxial transistor and method of manufacture
US3455748A (en) * 1965-05-24 1969-07-15 Sprague Electric Co Method of making a narrow base transistor
US3363154A (en) * 1965-06-28 1968-01-09 Teledyne Inc Integrated circuit having active and passive components in same semiconductor region
US3489961A (en) * 1966-09-29 1970-01-13 Fairchild Camera Instr Co Mesa etching for isolation of functional elements in integrated circuits
US3488564A (en) * 1968-04-01 1970-01-06 Fairchild Camera Instr Co Planar epitaxial resistors
US3573573A (en) * 1968-12-23 1971-04-06 Ibm Memory cell with buried load impedances
US3654530A (en) * 1970-06-22 1972-04-04 Ibm Integrated clamping circuit
US4068255A (en) * 1975-10-16 1978-01-10 Dionics, Inc. Mesa-type high voltage switching integrated circuit
US4685203A (en) * 1983-09-13 1987-08-11 Mitsubishi Denki Kabushiki Kaisha Hybrid integrated circuit substrate and method of manufacturing the same
US4873497A (en) * 1988-10-03 1989-10-10 Motorola, Inc. Wide band voltage controlled R-C oscillator for use with MMIC technology
DE19703780A1 (de) * 1997-02-01 1998-08-06 Thomas Frohberg Trinom-Transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE527524A (en:Method) * 1949-05-30
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
US2894221A (en) * 1955-10-11 1959-07-07 Carl E Coy Artificial transmission lines
US2897295A (en) * 1956-06-28 1959-07-28 Honeywell Regulator Co Cascaded tetrode transistor amplifier
US2967277A (en) * 1958-07-29 1961-01-03 Hahnel Alwin Frequency divider
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
NL268758A (en:Method) * 1960-09-20

Also Published As

Publication number Publication date
MY6900289A (en) 1969-12-31
DE1514842A1 (de) 1970-11-26
DE1207014C2 (de) 1976-06-10
CH428008A (fr) 1967-01-15
NL274363A (en:Method)
DE1514842B2 (de) 1972-10-05
GB988903A (en) 1965-04-14
LU41205A1 (en:Method) 1962-04-05
NL123416C (en:Method)
GB988902A (en) 1965-04-14
US3130377A (en) 1964-04-21
DE1207014B (de) 1965-12-16
FR1313638A (fr) 1962-12-28
CH400370A (fr) 1965-10-15
US3211972A (en) 1965-10-12

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