MY200375A - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
MY200375A
MY200375A MYPI2020003629A MYPI2020003629A MY200375A MY 200375 A MY200375 A MY 200375A MY PI2020003629 A MYPI2020003629 A MY PI2020003629A MY PI2020003629 A MYPI2020003629 A MY PI2020003629A MY 200375 A MY200375 A MY 200375A
Authority
MY
Malaysia
Prior art keywords
wafer
polyolefin sheet
ring frame
processing method
wafer processing
Prior art date
Application number
MYPI2020003629A
Inventor
Harada Shigenori
Matsuzawa Minoru
Agari Masamitsu
Ohmae Makiko
Miyai Toshiki
Fujii Yusuke
Kawamura Emiko
Arakawa Taro
Yodo Yoshiaki
Kiuchi Hayato
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of MY200375A publication Critical patent/MY200375A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/388—Trepanning, i.e. boring by moving the beam spot about an axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H10P72/742—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of picking up each device chip from the polyolefin sheet.
MYPI2020003629A 2019-08-07 2020-07-13 Wafer processing method MY200375A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019145060A JP7345973B2 (en) 2019-08-07 2019-08-07 Wafer processing method

Publications (1)

Publication Number Publication Date
MY200375A true MY200375A (en) 2023-12-21

Family

ID=74188730

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2020003629A MY200375A (en) 2019-08-07 2020-07-13 Wafer processing method

Country Status (8)

Country Link
US (1) US11594454B2 (en)
JP (1) JP7345973B2 (en)
KR (1) KR20210018072A (en)
CN (1) CN112435964B (en)
DE (1) DE102020209874B4 (en)
MY (1) MY200375A (en)
SG (1) SG10202006736YA (en)
TW (1) TW202107548A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7341606B2 (en) * 2019-09-11 2023-09-11 株式会社ディスコ Wafer processing method
JP2021064627A (en) * 2019-10-10 2021-04-22 株式会社ディスコ Wafer processing method
JP7301480B2 (en) * 2019-10-17 2023-07-03 株式会社ディスコ Wafer processing method
JP2021077720A (en) * 2019-11-07 2021-05-20 株式会社ディスコ Wafer processing method

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JPS539710B2 (en) * 1972-08-07 1978-04-07
US4197346A (en) 1978-10-10 1980-04-08 Appleton Papers Inc. Self-contained pressure-sensitive record material and process of preparation
JP3076179B2 (en) 1993-07-26 2000-08-14 株式会社ディスコ Dicing equipment
JP3076179U (en) 2000-09-07 2001-03-30 和雄 落合 Cup type bottle cap
JP2003152056A (en) 2001-11-08 2003-05-23 Sony Corp Semiconductor element holder and method of manufacturing the same
JP2005191297A (en) * 2003-12-25 2005-07-14 Jsr Corp Dicing film and semiconductor wafer cutting method
JP2006114691A (en) * 2004-10-14 2006-04-27 Disco Abrasive Syst Ltd Wafer division method
JP4930679B2 (en) * 2005-12-14 2012-05-16 日本ゼオン株式会社 Manufacturing method of semiconductor device
JP2008117943A (en) * 2006-11-06 2008-05-22 Nitto Denko Corp Adhesive sheet for water jet laser dicing
JP5047838B2 (en) * 2008-02-26 2012-10-10 株式会社ディスコ Tape applicator
JP5801046B2 (en) * 2010-12-06 2015-10-28 株式会社ディスコ Processing method of plate
JP5393902B2 (en) * 2011-08-09 2014-01-22 三井化学東セロ株式会社 Semiconductor device manufacturing method and semiconductor wafer surface protecting film used in the method
WO2013047674A1 (en) 2011-09-30 2013-04-04 リンテック株式会社 Dicing sheet with protective film forming layer and chip fabrication method
JP6110136B2 (en) * 2012-12-28 2017-04-05 株式会社ディスコ Wafer laser processing method and laser processing apparatus
JP6151557B2 (en) * 2013-05-13 2017-06-21 株式会社ディスコ Laser processing method
JP6121281B2 (en) * 2013-08-06 2017-04-26 株式会社ディスコ Wafer processing method
JP6425435B2 (en) 2014-07-01 2018-11-21 株式会社ディスコ Tip spacing maintenance device
WO2016052444A1 (en) * 2014-09-29 2016-04-07 リンテック株式会社 Base for sheets for semiconductor wafer processing, sheet for semiconductor wafer processing, and method for manufacturing semiconductor device
JP6456766B2 (en) * 2015-05-08 2019-01-23 株式会社ディスコ Wafer processing method
JP2017059766A (en) * 2015-09-18 2017-03-23 株式会社ディスコ Wafer processing method
JP2017147361A (en) * 2016-02-18 2017-08-24 株式会社ディスコ Wafer processing method
JP2017152569A (en) 2016-02-25 2017-08-31 株式会社ディスコ Processing method of wafer
JP2018029126A (en) * 2016-08-18 2018-02-22 株式会社ディスコ Wafer processing method
JP6837905B2 (en) * 2017-04-25 2021-03-03 株式会社ディスコ Wafer processing method
DE102017208405B4 (en) * 2017-05-18 2024-05-02 Disco Corporation Method for processing a wafer and protective film
JP2019192717A (en) 2018-04-20 2019-10-31 株式会社ディスコ Method of processing wafer
JP7154809B2 (en) 2018-04-20 2022-10-18 株式会社ディスコ Wafer processing method
JP7181020B2 (en) * 2018-07-26 2022-11-30 株式会社ディスコ Wafer processing method
JP7341606B2 (en) * 2019-09-11 2023-09-11 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
TW202107548A (en) 2021-02-16
SG10202006736YA (en) 2021-03-30
DE102020209874B4 (en) 2024-07-04
US11594454B2 (en) 2023-02-28
CN112435964B (en) 2025-12-23
DE102020209874A1 (en) 2021-02-11
JP7345973B2 (en) 2023-09-19
JP2021027213A (en) 2021-02-22
CN112435964A (en) 2021-03-02
US20210043513A1 (en) 2021-02-11
KR20210018072A (en) 2021-02-17

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