MY198070A - Isfet integrated with a micro-heater and fabrication method thereof - Google Patents
Isfet integrated with a micro-heater and fabrication method thereofInfo
- Publication number
- MY198070A MY198070A MYPI2014701279A MYPI2014701279A MY198070A MY 198070 A MY198070 A MY 198070A MY PI2014701279 A MYPI2014701279 A MY PI2014701279A MY PI2014701279 A MYPI2014701279 A MY PI2014701279A MY 198070 A MY198070 A MY 198070A
- Authority
- MY
- Malaysia
- Prior art keywords
- heater
- micro
- isfet
- integrated
- present
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The present invention relates to an ISFET integrated with a heating element, particularly a micro-heater (130), for gas sensing application. A method for fabricating the ISFET with the micro-heater (130) is also disclosed in the present invention. By using the method of the present invention, the ISFET with the micro-heater (130) has optimum performance and detection sensitivity to its environment changes, while reducing potential damage on the sensing membrane element (114) (123). Furthermore, the configuration of the ISFET which includes at least two silicon substrates (110) (120) enables the fabrication of the ISFET device with the micro-heater (130) to be more effective, leaves no air gap, and does not block the micro-heater (130) and the sensing membrane element (114) (123) during detection. Thus, the sensing membrane element (114) (123) and the micro-heater (130) are fully exposed to the change of its environment. (Figure 1J)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI2014701279A MY198070A (en) | 2014-05-20 | 2014-05-20 | Isfet integrated with a micro-heater and fabrication method thereof |
PCT/MY2015/000032 WO2015178754A1 (en) | 2014-05-20 | 2015-05-13 | Isfet integrated with a micro-heater and fabrication method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI2014701279A MY198070A (en) | 2014-05-20 | 2014-05-20 | Isfet integrated with a micro-heater and fabrication method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
MY198070A true MY198070A (en) | 2023-07-31 |
Family
ID=54554332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2014701279A MY198070A (en) | 2014-05-20 | 2014-05-20 | Isfet integrated with a micro-heater and fabrication method thereof |
Country Status (2)
Country | Link |
---|---|
MY (1) | MY198070A (en) |
WO (1) | WO2015178754A1 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63101740A (en) * | 1986-10-17 | 1988-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Vertical fet type gas sensor |
JP2706252B2 (en) * | 1988-02-21 | 1998-01-28 | 科学技術振興事業団 | Extended gate FET ion sensor |
GB2321336B (en) * | 1997-01-15 | 2001-07-25 | Univ Warwick | Gas-sensing semiconductor devices |
JP4389031B2 (en) * | 2006-12-06 | 2009-12-24 | 国立大学法人 岡山大学 | Gas sensor |
MY162299A (en) * | 2009-10-20 | 2017-05-31 | Mimos Berhad | Inverted isfet and method of producing thereof |
MY164424A (en) * | 2011-03-03 | 2017-12-15 | Mimos Berhad | A sensor system and a method for fabricating thereof |
-
2014
- 2014-05-20 MY MYPI2014701279A patent/MY198070A/en unknown
-
2015
- 2015-05-13 WO PCT/MY2015/000032 patent/WO2015178754A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2015178754A1 (en) | 2015-11-26 |
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