MY159481A - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- MY159481A MY159481A MYPI2012003494A MYPI2012003494A MY159481A MY 159481 A MY159481 A MY 159481A MY PI2012003494 A MYPI2012003494 A MY PI2012003494A MY PI2012003494 A MYPI2012003494 A MY PI2012003494A MY 159481 A MY159481 A MY 159481A
- Authority
- MY
- Malaysia
- Prior art keywords
- electrolyte
- polishing composition
- salt
- acid
- polishing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 4
- 239000000203 mixture Substances 0.000 title abstract 3
- 239000003792 electrolyte Substances 0.000 abstract 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- 150000003839 salts Chemical class 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 abstract 1
- 235000011130 ammonium sulphate Nutrition 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229940005657 pyrophosphoric acid Drugs 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A POLISHING COMPOSITION THAT IS CAPABLE OF ATTAINING A HIGH SiOx (0 < x ≤ 2) POLISHING RATE IS PROVIDED. THE POLISHING COMPOSITION CONTAINS COLLOIDAL SILICA AND AN ADDITIVE COMPOSED OF AN ELECTROLYTE OR A SALT OF THE ELECTROLYTE THAT RELEASES HYDROGEN IONS IN AN AQUEOUS SOLUTION. THE ELECTROLYTE IS COMPOSED OF SULFURIC ACID, PYROPHOSPHORIC ACID, PHOSPHORIC ACID, OR THE LIKE, AND THE SALT OF THE ELECTROLYTE IS COMPOSED OF AMMONIUM SULFATE OR THE LIKE. NO SUITABLE
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010022411 | 2010-02-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY159481A true MY159481A (en) | 2017-01-13 |
Family
ID=44355330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2012003494A MY159481A (en) | 2010-02-03 | 2011-01-28 | Polishing composition |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5132820B2 (en) |
CN (1) | CN102741370B (en) |
MY (1) | MY159481A (en) |
TW (1) | TWI537368B (en) |
WO (1) | WO2011096331A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103484024B (en) * | 2013-09-13 | 2014-10-15 | 上海新安纳电子科技有限公司 | Chemico-mechanical polishing liquid for silicon dioxide dielectric materials and preparing method thereof |
JP6373029B2 (en) * | 2014-03-27 | 2018-08-15 | 株式会社フジミインコーポレーテッド | Polishing composition |
JP7330668B2 (en) * | 2018-03-08 | 2023-08-22 | 株式会社フジミインコーポレーテッド | Surface treatment composition, method for producing surface treatment composition, method for surface treatment, and method for production of semiconductor substrate |
JP7409918B2 (en) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101371853B1 (en) * | 2005-01-05 | 2014-03-07 | 니타 하스 인코포레이티드 | Polishing slurry |
JP2007012679A (en) * | 2005-06-28 | 2007-01-18 | Asahi Glass Co Ltd | Abrasive and manufacturing method of semiconductor integrated circuit device |
JP2008124377A (en) * | 2006-11-15 | 2008-05-29 | Jsr Corp | Aqueous dispersant for chemical-mechanical polishing, chemical-mechanical polishing method, and kit for preparing aqueous dispersant for chemical-mechanical polishing |
JP2009164188A (en) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | Polishing composition |
-
2011
- 2011-01-28 JP JP2011552749A patent/JP5132820B2/en active Active
- 2011-01-28 WO PCT/JP2011/051701 patent/WO2011096331A1/en active Application Filing
- 2011-01-28 MY MYPI2012003494A patent/MY159481A/en unknown
- 2011-01-28 CN CN201180008038.8A patent/CN102741370B/en active Active
- 2011-02-01 TW TW100104043A patent/TWI537368B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI537368B (en) | 2016-06-11 |
JP5132820B2 (en) | 2013-01-30 |
JPWO2011096331A1 (en) | 2013-06-10 |
CN102741370A (en) | 2012-10-17 |
WO2011096331A1 (en) | 2011-08-11 |
CN102741370B (en) | 2015-10-14 |
TW201137099A (en) | 2011-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MX2015009389A (en) | Composition for etching treatment of resin material. | |
WO2013112268A3 (en) | Etching of plastic using acidic solutions containing trivalent manganese | |
WO2010127094A3 (en) | High speed copper plating bath | |
WO2010138945A3 (en) | Preparation of flow cell battery electrolytes from raw materials | |
HK1140747A1 (en) | Process for the production of barium sulfate | |
BR112015001994A2 (en) | communication with a new improved type of carrier | |
MY159481A (en) | Polishing composition | |
BR112013018422A2 (en) | iron (iii) -carbon orthophosphate composite | |
WO2010138943A3 (en) | Electrolyte compositions | |
GB2529113A (en) | Non-Fluorinated Water based superhydrophobic surfaces | |
WO2014189503A3 (en) | In-situ electrolyte preparation in flow battery | |
WO2012061460A3 (en) | Method for producing ammonium sulfate nitrate | |
IN2014DN06539A (en) | ||
PH12014502679B1 (en) | Neutralization method | |
CN102417380A (en) | Nutrient solution for cultivating pepper substrate | |
PH12015502678A1 (en) | Supplement, surface -treated metal material, and production method therefor | |
EA201501129A3 (en) | ELECTROLYTE SOLUTION AND ELECTROCHEMICAL METHODS OF SURFACE MODIFICATION | |
EP4269488A3 (en) | Cerium citrate, method of making and corrosion inhibitor comprising cerium citrate | |
WO2008156171A1 (en) | Method of regulating liquid properties of reducing hydrogen solution and reducing hydrogen solution composition | |
GB201012011D0 (en) | Fuel cell | |
TH134866B (en) | Composition for polishing | |
WO2011083955A3 (en) | Method for manufacturing crystalline form (i) of clopidogrel hydrogen sulphate | |
RU2011134968A (en) | METHOD FOR PRODUCING CATHODE MATERIAL WITH OLIVIN STRUCTURE FOR LITHIUM AUTONOMOUS ENERGY | |
CN103643229B (en) | Metal fastenings Phosphating Solution | |
PE20152021A1 (en) | PRODUCTION METHOD FOR IRON MINERAL WITH LOW SULFUR CONTENT |