MY147695A - Aberration evaluation pattern, aberration evaluation method, aberration correction method, electron beam drawing apparatus, electron microscope, master, stamper - Google Patents
Aberration evaluation pattern, aberration evaluation method, aberration correction method, electron beam drawing apparatus, electron microscope, master, stamperInfo
- Publication number
- MY147695A MY147695A MYPI20082935A MYPI20082935A MY147695A MY 147695 A MY147695 A MY 147695A MY PI20082935 A MYPI20082935 A MY PI20082935A MY PI20082935 A MYPI20082935 A MY PI20082935A MY 147695 A MY147695 A MY 147695A
- Authority
- MY
- Malaysia
- Prior art keywords
- aberration
- electron beam
- stamper
- astigmatism
- master
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1532—Astigmatism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/282—Determination of microscope properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
A METHOD OF EVALUATING ASTIGMATISM OF AN IRRADIATION SYSTEM IRRADIATING AN ELECTRON BEAM IS DISCLOSED. IN THIS METHOD, A PATTERN CONSISTING OF PLURAL (FOR EXAMPLE, FOUR) CONCENTRIC CIRCLES IS FORMED ON A REFERENCE SAMPLE "WP" AND AN IMAGE (SCANNED IMAGE) IS FORMED BASED ON AN ELECTRON SIGNAL OBTAINED BY SCANNING THE ELECTRON BEAM ONTO THE REFERENCE SAMPLE "WP". IN THE SCANNED IMAGE, THE IMAGE HAS A BLUR IN A REGION WITH ITS LONGITUDINAL DIRECTION PARALLEL TO THE GENERATING DIRECTION OF THE ASTIGMATISM AND THE SIZE OF THE BLUR DEPENDS ON MAGNITUDE OF THE ASTIGMATISM. THEREFORE, THE DIRECTION AND THE MAGNITUDE OF THE ASTIGMATISM OF THE IRRADIATION SYSTEM OF AN IRRADIATION APPARATUS (10) CAN BE DETECTED BASED ON THE OBTAINED SCANNED IMAGE.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006356875 | 2006-12-29 | ||
JP2007306627A JP4903675B2 (en) | 2006-12-29 | 2007-11-27 | Aberration evaluation method, aberration correction method, electron beam drawing apparatus, electron microscope, master disk, stamper, recording medium, and structure |
Publications (1)
Publication Number | Publication Date |
---|---|
MY147695A true MY147695A (en) | 2013-01-15 |
Family
ID=39725013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20082935A MY147695A (en) | 2006-12-29 | 2007-12-27 | Aberration evaluation pattern, aberration evaluation method, aberration correction method, electron beam drawing apparatus, electron microscope, master, stamper |
Country Status (7)
Country | Link |
---|---|
US (1) | US8158310B2 (en) |
JP (1) | JP4903675B2 (en) |
KR (1) | KR101000982B1 (en) |
CN (1) | CN101421823B (en) |
GB (1) | GB2450265B (en) |
MX (1) | MX2008010906A (en) |
MY (1) | MY147695A (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101420244B1 (en) * | 2008-05-20 | 2014-07-21 | 재단법인서울대학교산학협력재단 | Beam forming electrode and electron gun using the same |
KR20100003643A (en) * | 2008-07-01 | 2010-01-11 | 삼성전자주식회사 | The method of measuring dimension of patterns and the record medium recording the program implementing the same |
US8039176B2 (en) | 2009-08-26 | 2011-10-18 | D2S, Inc. | Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography |
US8669023B2 (en) | 2008-09-01 | 2014-03-11 | D2S, Inc. | Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography |
EP2328168B1 (en) * | 2008-09-25 | 2015-04-29 | Hitachi High-Technologies Corporation | Charged particle beam apparatus and geometric aberration measuring method employed therein |
TWI496182B (en) * | 2009-08-26 | 2015-08-11 | D2S Inc | Method and system for manufacturing a surface using charged particle beam lithography with variable beam blur |
US9164372B2 (en) | 2009-08-26 | 2015-10-20 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
US9448473B2 (en) | 2009-08-26 | 2016-09-20 | D2S, Inc. | Method for fracturing and forming a pattern using shaped beam charged particle beam lithography |
US20110089345A1 (en) * | 2009-10-21 | 2011-04-21 | D2S, Inc. | Method and system for manufacturing a surface using charged particle beam lithography |
JP5341924B2 (en) * | 2011-01-28 | 2013-11-13 | 株式会社日立ハイテクノロジーズ | Scanning electron microscope |
JP5814855B2 (en) * | 2012-04-27 | 2015-11-17 | 株式会社日立ハイテクノロジーズ | Charged particle beam adjustment support apparatus and method |
JP2014170601A (en) * | 2013-03-01 | 2014-09-18 | Toshiba Corp | Magnetic recording medium, method for producing the same, and method for producing stamper |
JP5464534B1 (en) * | 2013-06-14 | 2014-04-09 | 株式会社日立ハイテクノロジーズ | Charged particle beam device and method for adjusting charged particle beam device |
US11268854B2 (en) | 2015-07-29 | 2022-03-08 | Samsung Electronics Co., Ltd. | Spectrometer including metasurface |
US11867556B2 (en) | 2015-07-29 | 2024-01-09 | Samsung Electronics Co., Ltd. | Spectrometer including metasurface |
US10514296B2 (en) | 2015-07-29 | 2019-12-24 | Samsung Electronics Co., Ltd. | Spectrometer including metasurface |
US10807187B2 (en) * | 2015-09-24 | 2020-10-20 | Arcam Ab | X-ray calibration standard object |
DE102015013698B9 (en) * | 2015-10-22 | 2017-12-21 | Carl Zeiss Microscopy Gmbh | Method for operating a multi-beam particle microscope |
DE102016225344A1 (en) * | 2016-12-16 | 2018-06-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | System for analyzing electromagnetic radiation and device for producing the same |
DE102018108283A1 (en) * | 2018-04-09 | 2019-10-10 | Carl Zeiss Smt Gmbh | Electro-optical circuit board for contacting photonic integrated circuits |
CN112236837B (en) * | 2018-06-04 | 2024-03-15 | 株式会社日立高新技术 | Electron beam apparatus |
JP7119688B2 (en) * | 2018-07-18 | 2022-08-17 | 株式会社ニューフレアテクノロジー | Drawing data generation method, program, and multi-charged particle beam drawing apparatus |
DE102019204575B3 (en) * | 2019-04-01 | 2020-08-06 | Carl Zeiss Smt Gmbh | Method, device and computer program for determining a wavefront of a mass-laden particle beam |
WO2023053011A1 (en) * | 2021-09-29 | 2023-04-06 | Okinawa Institute Of Science And Technology School Corporation | Magnetic vector potential-based lens |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09223476A (en) * | 1996-02-19 | 1997-08-26 | Jeol Ltd | Astigmatism correcting method for charged particle beam apparatus |
JP3994691B2 (en) * | 2001-07-04 | 2007-10-24 | 株式会社日立製作所 | Charged particle beam apparatus and automatic astigmatism adjustment method |
JP2001085305A (en) | 1999-09-10 | 2001-03-30 | Toshiba Corp | Aberration measuring method and system of exposure system |
JP2001110345A (en) | 1999-10-14 | 2001-04-20 | Ricoh Co Ltd | Astigmatism correction method for electron microscope and its device |
JP2003007591A (en) | 2001-06-21 | 2003-01-10 | Nikon Corp | Method for evaluating aberration of charged particle beam optical system, method for adjusting charged particle beam device, charged particle beam exposing method, method for evaluating astigmatism and evaluation pattern |
JP3984019B2 (en) * | 2001-10-15 | 2007-09-26 | パイオニア株式会社 | Electron beam apparatus and electron beam adjusting method |
JP2004153245A (en) | 2002-10-07 | 2004-05-27 | Nikon Corp | Method of determining correction sensitivity or generation sensitivity of astigmatic blur in charged particle beam exposure device, and method of exposure |
JP2004265652A (en) * | 2003-02-28 | 2004-09-24 | Ricoh Co Ltd | Electron lens adjustment standard for photoelectron microscope and method of producing the same |
JP2005063678A (en) * | 2003-08-11 | 2005-03-10 | Jeol Ltd | Automatic focus correction method and automatic astigmatism correction method in charged particle beam device |
JP4286625B2 (en) | 2003-09-29 | 2009-07-01 | 株式会社日立ハイテクノロジーズ | Sample observation method using electron microscope |
JP2006080201A (en) | 2004-09-08 | 2006-03-23 | Jeol Ltd | Focus/astigmatism correcting adjusting method in electron-beam exposure system |
-
2007
- 2007-11-27 JP JP2007306627A patent/JP4903675B2/en not_active Expired - Fee Related
- 2007-12-27 MY MYPI20082935A patent/MY147695A/en unknown
- 2007-12-27 KR KR1020087020891A patent/KR101000982B1/en not_active IP Right Cessation
- 2007-12-27 CN CN200780013594.8A patent/CN101421823B/en not_active Expired - Fee Related
- 2007-12-27 GB GB0815434A patent/GB2450265B/en not_active Expired - Fee Related
- 2007-12-27 MX MX2008010906A patent/MX2008010906A/en active IP Right Grant
- 2007-12-27 US US12/279,964 patent/US8158310B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2008181086A (en) | 2008-08-07 |
MX2008010906A (en) | 2008-10-17 |
US20100227200A1 (en) | 2010-09-09 |
GB2450265B (en) | 2011-07-20 |
CN101421823B (en) | 2011-04-20 |
CN101421823A (en) | 2009-04-29 |
JP4903675B2 (en) | 2012-03-28 |
US8158310B2 (en) | 2012-04-17 |
GB2450265A (en) | 2008-12-17 |
KR101000982B1 (en) | 2010-12-13 |
KR20090003191A (en) | 2009-01-09 |
GB0815434D0 (en) | 2008-10-01 |
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