MY143173A - Compact power semiconductor module having a connecting device - Google Patents

Compact power semiconductor module having a connecting device

Info

Publication number
MY143173A
MY143173A MYPI20070243A MYPI20070243A MY143173A MY 143173 A MY143173 A MY 143173A MY PI20070243 A MYPI20070243 A MY PI20070243A MY PI20070243 A MYPI20070243 A MY PI20070243A MY 143173 A MY143173 A MY 143173A
Authority
MY
Malaysia
Prior art keywords
contact devices
power semiconductor
conductive layer
connecting device
semiconductor module
Prior art date
Application number
MYPI20070243A
Inventor
Christian G Xd Bl
Markus Knebel
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Publication of MY143173A publication Critical patent/MY143173A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

COMPACT POWER SEMICONDUCTOR MODULE HAVING A CONNECTING DEVICE THE INVENTION DESCRIBES A POWER SEMICONDUCTOR MODULE 5 HAVING A HOUSING, A SUBSTRATE WITH CONDUCTOR TRACKS AND POWER SEMICONDUCTOR COMPONENTS WHICH ARE ARRANGED ON THE LATTER, AND HAVING A CONNECTING DEVICE. THE LATTER COMPRISES A FILM COMPOSITE COMPRISING A FIRST AND A SECOND CONDUCTIVE LAYER, WHICH ARE RESPECTIVELY 10 PATTERNED PER SE AND THUS FORM CONDUCTOR TRACKS, AND AN INSULATING LAYER WHICH IS ARRANGED BETWEEN THE FIRST AND SECOND CONDUCTIVE LAYERS. THE FIRST CONDUCTIVE LAYER HAS FIRST CONTACT DEVICES, IN THE FORM OF SPOT- WELDED JOINTS, FOR POWER CONNECTING AREAS OF POWER 15 SEMICONDUCTOR COMPONENTS, SECOND CONTACT DEVICES FOR CONTROL CONNECTING AREAS OF POWER SEMICONDUCTOR COMPONENTS AS WELL AS THIRD CONTACT DEVICES FOR THE LOAD CONNECTION TO A PRINTED CIRCUIT BOARD. THE SECOND CONDUCTIVE LAYER HAS A CONNECTION TO THE FIRST 20 CONDUCTIVE LAYER AND FOURTH CONTACT DEVICES FOR THE CONTROL CONNECTION TO A PRINTED CIRCUIT BOARD. THE FILM COMPOSITE ALSO HAS FILM SECTIONS BETWEEN THE FIRST AND SECOND CONTACT DEVICES AND BETWEEN THE THIRD AND FOURTH CONTACT DEVICES, WHICH ARE ARRANGED IN GUIDE SECTIONS 25 OF THE HOUSING. (FIG. 2A) 73 -VO76)-;'IJ
MYPI20070243A 2006-03-22 2007-02-16 Compact power semiconductor module having a connecting device MY143173A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006013078A DE102006013078B4 (en) 2006-03-22 2006-03-22 Compact power semiconductor module with connection device

Publications (1)

Publication Number Publication Date
MY143173A true MY143173A (en) 2011-03-31

Family

ID=38258830

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20070243A MY143173A (en) 2006-03-22 2007-02-16 Compact power semiconductor module having a connecting device

Country Status (7)

Country Link
US (1) US7626256B2 (en)
EP (1) EP1855318A1 (en)
JP (1) JP5069924B2 (en)
KR (1) KR101118871B1 (en)
CN (1) CN101047172B (en)
DE (1) DE102006013078B4 (en)
MY (1) MY143173A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006013078B4 (en) 2006-03-22 2008-01-03 Semikron Elektronik Gmbh & Co. Kg Compact power semiconductor module with connection device
DE102006027482B3 (en) 2006-06-14 2007-08-16 Semikron Elektronik Gmbh & Co. Kg Housed semiconductor circuit arrangement e.g. power semiconductor module, has two conductive layers with contact device to joint surface of semiconductor component, where part of conductive layers is part of another contact device
DE102008034467B4 (en) 2008-07-24 2014-04-03 Semikron Elektronik Gmbh & Co. Kg Arrangement with a power semiconductor module and with a connection device
DE102008034468B4 (en) * 2008-07-24 2013-03-14 Semikron Elektronik Gmbh & Co. Kg The power semiconductor module
DE102009000888B4 (en) * 2009-02-16 2011-03-24 Semikron Elektronik Gmbh & Co. Kg A semiconductor device
DE102009017733B4 (en) 2009-04-11 2011-12-08 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with a connection device and formed as a contact spring internal connection elements
DE102009024385B4 (en) * 2009-06-09 2011-03-17 Semikron Elektronik Gmbh & Co. Kg Method for producing a power semiconductor module and power semiconductor module with a connection device
DE102009046403B4 (en) * 2009-11-04 2015-05-28 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module in pressure contact technology
DE102011076324B4 (en) * 2011-05-24 2014-04-10 Semikron Elektronik Gmbh & Co. Kg Power electronic system with connection means of first and second subsystems
US9431311B1 (en) 2015-02-19 2016-08-30 Semiconductor Components Industries, Llc Semiconductor package with elastic coupler and related methods
DE102019126623B4 (en) * 2019-10-02 2024-03-14 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Power electronic switching device with a casting compound
CN110690208A (en) * 2019-10-08 2020-01-14 中国电子科技集团公司第二十四研究所 Power hybrid integrated circuit packaging structure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121449A (en) * 1984-11-19 1986-06-09 Nippon Telegr & Teleph Corp <Ntt> Mounting structure and process of lsi chip
US4939570A (en) * 1988-07-25 1990-07-03 International Business Machines, Corp. High power, pluggable tape automated bonding package
US5105536A (en) * 1989-07-03 1992-04-21 General Electric Company Method of packaging a semiconductor chip in a low inductance package
DE4130637A1 (en) * 1990-10-11 1992-04-16 Abb Patent Gmbh Mfg. connection element for power semiconductor module - esp. from one-side copper@ coated polyimide foil
JP3139788B2 (en) * 1991-09-04 2001-03-05 日本板硝子株式会社 Sheet glass bending apparatus and bending method
DE69329542T2 (en) * 1992-06-05 2001-02-08 Mitsui Chemicals Inc THREE-DIMENSIONAL CIRCUIT, ELECTRONIC COMPONENT ARRANGEMENT USING THIS CIRCUIT AND MANUFACTURING METHOD FOR THIS CIRCUIT
JPH07221264A (en) * 1994-02-04 1995-08-18 Hitachi Ltd Power semiconductor module and inverter device using it
JP3279842B2 (en) * 1994-09-29 2002-04-30 オリジン電気株式会社 Power semiconductor device
US5684326A (en) * 1995-02-24 1997-11-04 Telefonaktiebolaget L.M. Ericsson Emitter ballast bypass for radio frequency power transistors
DE19617055C1 (en) 1996-04-29 1997-06-26 Semikron Elektronik Gmbh High-density multilayer prepreg semiconductor power module
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
DE10121970B4 (en) * 2001-05-05 2004-05-27 Semikron Elektronik Gmbh Power semiconductor module in pressure contact
DE10258570B4 (en) * 2002-12-14 2005-11-03 Semikron Elektronik Gmbh & Co. Kg The power semiconductor module
DE10355925B4 (en) * 2003-11-29 2006-07-06 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module and method of its manufacture
DE102004025609B4 (en) * 2004-05-25 2010-12-09 Semikron Elektronik Gmbh & Co. Kg Arrangement in screw-type pressure contact with a power semiconductor module
DE102006013078B4 (en) 2006-03-22 2008-01-03 Semikron Elektronik Gmbh & Co. Kg Compact power semiconductor module with connection device

Also Published As

Publication number Publication date
JP5069924B2 (en) 2012-11-07
CN101047172A (en) 2007-10-03
JP2007258711A (en) 2007-10-04
CN101047172B (en) 2010-05-26
US20070222060A1 (en) 2007-09-27
DE102006013078B4 (en) 2008-01-03
US7626256B2 (en) 2009-12-01
DE102006013078A1 (en) 2007-10-04
EP1855318A1 (en) 2007-11-14
KR20070095780A (en) 2007-10-01
KR101118871B1 (en) 2012-03-19

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