MY142676A - An integrated ion sensitive field effect transistor sensor - Google Patents
An integrated ion sensitive field effect transistor sensorInfo
- Publication number
- MY142676A MY142676A MYPI20072005A MY142676A MY 142676 A MY142676 A MY 142676A MY PI20072005 A MYPI20072005 A MY PI20072005A MY 142676 A MY142676 A MY 142676A
- Authority
- MY
- Malaysia
- Prior art keywords
- ion
- field effect
- effect transistor
- sensitive field
- ion sensitive
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
AN MTEGRATED ION SENSITIVE FIELD EFFECT TRANSISTOR SENSOR 5 A CHEMICAL SENSOR HAVING AN ION SENSITIVE FIELD EFFECT TRANSISTOR (ISFET) COMPRISING A SUBSTRATE (10) SITUATED WITH A SOURCE (4) AND A DRAIN (3); AN ION SENSING GATE (5) DISPOSED BETWEEN THE SOURCE AND THE DRAIN; AN ION-SENSITIVE FILM (1) FORMED ON THE SURFACE OF THE SUBSTRATE AND THE ION SENSING GATE-, AN ELECTRODE DOMAIN (6) FORMED ON 10 THE ION-SENSITIVE FILM SURROUNDING THE PERIPHERY OF THE ION SENSING GATE (5) CHARACTERIZED IN THAT THE ELECTRODE DOMAIN (6) IS MADE OF TUNGSTEN, TITANIUM OR TUNGSTEN SILICIDE. (MOST ILLUSTRATED BY
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI20072005 MY142676A (en) | 2007-11-15 | 2007-11-15 | An integrated ion sensitive field effect transistor sensor |
PCT/MY2008/000140 WO2009064166A2 (en) | 2007-11-15 | 2008-11-14 | An integrated ion sensitive field effect transistor sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI20072005 MY142676A (en) | 2007-11-15 | 2007-11-15 | An integrated ion sensitive field effect transistor sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
MY142676A true MY142676A (en) | 2010-12-15 |
Family
ID=40639340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20072005 MY142676A (en) | 2007-11-15 | 2007-11-15 | An integrated ion sensitive field effect transistor sensor |
Country Status (2)
Country | Link |
---|---|
MY (1) | MY142676A (en) |
WO (1) | WO2009064166A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4962599B2 (en) * | 2010-06-14 | 2012-06-27 | 大日本印刷株式会社 | Field effect transistor biosensor |
TWI432724B (en) | 2010-10-18 | 2014-04-01 | Ind Tech Res Inst | Microsystem for analyzing blood |
DE102012210183B4 (en) | 2012-06-18 | 2017-03-23 | Siemens Healthcare Gmbh | Arrangement and method for analyzing nucleic acid sequences |
CN111307913A (en) * | 2020-03-29 | 2020-06-19 | 复旦大学 | Semiconductor ion sensor without reference electrode and preparation method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4592824A (en) * | 1985-09-13 | 1986-06-03 | Centre Suisse D'electronique Et De Microtechnique S.A. | Miniature liquid junction reference electrode and an integrated solid state electrochemical sensor including the same |
US6306594B1 (en) * | 1988-11-14 | 2001-10-23 | I-Stat Corporation | Methods for microdispensing patterened layers |
KR100220934B1 (en) * | 1995-12-08 | 1999-09-15 | 김영환 | Manufacture of semiconductor device |
-
2007
- 2007-11-15 MY MYPI20072005 patent/MY142676A/en unknown
-
2008
- 2008-11-14 WO PCT/MY2008/000140 patent/WO2009064166A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2009064166A2 (en) | 2009-05-22 |
WO2009064166A3 (en) | 2009-07-30 |
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