MY136595A - Very narrow band,two chamber, high rep rate gas discharge laser system - Google Patents

Very narrow band,two chamber, high rep rate gas discharge laser system

Info

Publication number
MY136595A
MY136595A MYPI20023234A MY136595A MY 136595 A MY136595 A MY 136595A MY PI20023234 A MYPI20023234 A MY PI20023234A MY 136595 A MY136595 A MY 136595A
Authority
MY
Malaysia
Prior art keywords
pulse
chamber
laser system
discharge
master oscillator
Prior art date
Application number
Inventor
David S Knowles
Igor V Fomenkov
Richard C Ujazdowski
Eckehard D Onkels
Richard M Ness
Scott T Smith
William G Hulburd
Jeffrey Oicles
Daniel J W Brown
Herve A Besaucele
David W Myers
Alexander I Ershov
William N Partlo
Richard L Sandstrom
Palash P Das
Stuart L Anderson
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/943,343 external-priority patent/US6567450B2/en
Priority claimed from US10/006,913 external-priority patent/US6535531B1/en
Priority claimed from US10/012,002 external-priority patent/US6625191B2/en
Application filed by Cymer Inc filed Critical Cymer Inc
Publication of MY136595A publication Critical patent/MY136595A/en

Links

Landscapes

  • Lasers (AREA)

Abstract

AN INJECTION SEEDED MODULAR GAS DISCHARGE LASER SYSTEM CAPABLE OF PRODUCING HIGH QUALITY PULSED LASER BEAMS AT PULSE RATES OF ABOUT 4,000 HZ OR GREATER AND AT PULSE ENERGIES OF ABOUT 5MJ OR GREATER. TWO SEPARATE DISCHARGE CHAMBERS ARE PROVIDED, ONE OF WHICH IS A PART OF A MASTER OSCILLATOR (10) PRODUCING A VERY NARROW BAND SEED BEAM WHICH IS AMPLIFIED IN THE SECOND DISCHARGE CHAMBER. THE CHAMBERS CAN BE CONTROLLED SEPARATELY PERMITTING SEPARATE OPTIMIZATION OF WAVELENGTH PARAMETERS IN THE MASTER OSCILLATOR (10) AND OPTIMIZATION OF PULSE ENERGY PARAMETERS IN THE AMPLIFYING CHAMBER (12). A PREFERRED EMBODIMENT IN AN ARF EXCIMER LASER SYSTEM CONFIGURED AS A MOPA AND SPECIFICALLY DESIGNED FOR USE AS A LIGHT SOURCE FOR INTERGRATED CIRCUIT LITHOGRAPHY. IN THE PREFERRED MOPA EMBODIMENT, EACH CHAMBER COMPRISES A SINGLE TANGENTIAL FAN PROVIDING SUFFICIENT GAS FLOW TO PERMIT OPERATION AT PULSE RATES OF 4000 HZ OR GREATER BY CLEARING DEBRIS FROM THE DISCHARGE REGION IN LESS TIME THAN THE APPROXIMATELY 0.25MILLISECONDS BETWEEN PULSES. THE MASTER OSCILLATOR (10) IS EQUIPPED WITH A LINE NARROWING PACKAGE HAVING A VERY FAST TUNING MIRROR CAPABLE OF CONTROLLING CENTERLINE WAVELENGHT ON A PULSE-TO-PULSE BASIS AT REPETITION RATES OF 4000 HZ OR GREATER TO A PRECISION OF LESS THAN 0.2 PM.
MYPI20023234 2001-08-29 2002-08-29 Very narrow band,two chamber, high rep rate gas discharge laser system MY136595A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/943,343 US6567450B2 (en) 1999-12-10 2001-08-29 Very narrow band, two chamber, high rep rate gas discharge laser system
US10/006,913 US6535531B1 (en) 2001-11-29 2001-11-29 Gas discharge laser with pulse multiplier
US10/012,002 US6625191B2 (en) 1999-12-10 2001-11-30 Very narrow band, two chamber, high rep rate gas discharge laser system

Publications (1)

Publication Number Publication Date
MY136595A true MY136595A (en) 2008-10-31

Family

ID=41795371

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20023234 MY136595A (en) 2001-08-29 2002-08-29 Very narrow band,two chamber, high rep rate gas discharge laser system

Country Status (3)

Country Link
AT (1) ATE459117T1 (en)
DE (1) DE60235480D1 (en)
MY (1) MY136595A (en)

Also Published As

Publication number Publication date
DE60235480D1 (en) 2010-04-08
ATE459117T1 (en) 2010-03-15

Similar Documents

Publication Publication Date Title
WO2003021728A3 (en) Very narrow band, two chamber, high rep rate gas discharge laser system
WO2003021727A3 (en) Line selected f2 two chamber laser system
AU2002353869A1 (en) Timing control for two-chamber gas discharge laser system
JP5354742B2 (en) Laser generated plasma EUV light source
WO2003100826A3 (en) Lithography laser with beam delivery and beam pointing control
WO2001098012A3 (en) FOUR KHz GAS DISCHARGE LASER
WO2007053335A3 (en) Laser system
JP2022010094A (en) Generation method of pulse laser light
JP4640336B2 (en) Laser equipment
TW200627736A (en) Line narrowing module
WO2005104312A3 (en) Very high repetition rate narrow band gas discharge laser system
WO2004012308A3 (en) Control system for a two chamber gas discharge laser
US6735232B2 (en) Laser with versatile output energy
US20040202219A1 (en) Excimer or molecular fluorine laser with several discharge chambers
MY136595A (en) Very narrow band,two chamber, high rep rate gas discharge laser system
US20140028988A1 (en) Intracavity Loss Element for Power Amplifier
KR100840057B1 (en) Laser device
US7720120B2 (en) Method and apparatus for laser control in a two chamber gas discharge laser
US7751453B2 (en) Method and apparatus for laser control in a two chamber gas discharge laser
WO2002071556A2 (en) Barium fluoride high repetition rate uv excimer laser
Tünnermann et al. Generation of high peak power excimer laser radiation by pulse shortening
MY141430A (en) Laser lithography light source with beam delivery
Basting et al. Historical review of excimer laser development
US6690703B1 (en) Molecular fluorine laser system
Komori et al. Ultra-line-narrowed F2 laser for microlithography