MY119727A - Memory management apparatus and memory management method - Google Patents
Memory management apparatus and memory management methodInfo
- Publication number
- MY119727A MY119727A MYPI98002843A MYPI9802843A MY119727A MY 119727 A MY119727 A MY 119727A MY PI98002843 A MYPI98002843 A MY PI98002843A MY PI9802843 A MYPI9802843 A MY PI9802843A MY 119727 A MY119727 A MY 119727A
- Authority
- MY
- Malaysia
- Prior art keywords
- block
- data
- flag
- blocks
- memory management
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
- Memory System (AREA)
Abstract
THE PRESENT INVENTION ENABLES A HIGH-SPEED PROCESSING. THE PRESENT INVENTION PROVIDES A MEMORY MANAGEMENT METHOD FOR A MEMORY (22) HAVING A STORAGE AREA DIVIDED INTO A PLURALITY OF BLOCKS, SO THAT A DATA IN EACH OF THE BLOCKS IS ERASED AT ONCE WHEN THE BLOCK IS INITIALIZED, WHEREIN EACH OF THE BLOCKS HAS A FLAG INDICATING A BLOCK USE STATE; WHEREIN WHEN ERASING A DATA WRITTEN IN A BLOCK, INSTEAD OF EXECUTING AN INITIALIZATION OF THE BLOCK, AN ERASE FLAG OF THE BLOCK IS SET TO AN ERASE STATE INDICATING THAT A DATA CONTAINED IN THE BLOCK IS TO BE ERASED; AND WHEREIN PRIOR TO WRITING A NEW DATA IN A BLOCK HAVING THE ERASE FLAG IN THE ERASE STATE, THE INITIALIZATION PROCESSING IS EXECUTED TO THE BLOCK, SETTING THE FLAG OF THE BLOCK TO AN INITIAL STATE. IT IS PREFERABLE THAT EACH OF THE BLOCKS BE PROVIDED AN END FLAG INDICATING WHETHER THE BLOCK IS AN END BLOCK CONTAINING AN END PORTION OF A DATA OF A PREDETERMINED UNIT; AND DURING A DATA WRITE, THE END FLAG OF THE BLOCK WHERE AN END PORTION OF A DATA OF A PREDETERMINED UNIT IS WRITTEN BE SET TO A STATE INDICATING AN END BLOCK. (FIG. 3)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16919997A JP3718578B2 (en) | 1997-06-25 | 1997-06-25 | Memory management method and memory management device |
Publications (1)
Publication Number | Publication Date |
---|---|
MY119727A true MY119727A (en) | 2005-07-29 |
Family
ID=15882055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI98002843A MY119727A (en) | 1997-06-25 | 1998-06-23 | Memory management apparatus and memory management method |
Country Status (6)
Country | Link |
---|---|
US (1) | US6144607A (en) |
EP (1) | EP0887735A3 (en) |
JP (1) | JP3718578B2 (en) |
KR (1) | KR100578427B1 (en) |
CN (1) | CN1146795C (en) |
MY (1) | MY119727A (en) |
Families Citing this family (41)
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JPH10326493A (en) * | 1997-05-23 | 1998-12-08 | Ricoh Co Ltd | Compounded flash memory device |
DE19980546B4 (en) * | 1998-03-02 | 2011-01-27 | Lexar Media, Inc., Fremont | Flash memory card with advanced operating mode detection and easy-to-use interface system |
JP4315488B2 (en) * | 1998-06-30 | 2009-08-19 | ソニー株式会社 | Data storage device, data processing device, data processing system and data processing method |
KR100309879B1 (en) * | 1999-03-30 | 2001-11-01 | 윤종용 | System and method for managing a flash memory |
JP2001075848A (en) * | 1999-09-09 | 2001-03-23 | Nec Corp | Method for file management of file system |
JP2001297038A (en) * | 2000-04-11 | 2001-10-26 | Toshiba Corp | Data storage device, recording medium, and recording medium control method |
DE10030990B4 (en) * | 2000-06-30 | 2010-11-25 | Robert Bosch Gmbh | Method for writing and erasing a non-volatile memory area |
US6721843B1 (en) | 2000-07-07 | 2004-04-13 | Lexar Media, Inc. | Flash memory architecture implementing simultaneously programmable multiple flash memory banks that are host compatible |
US7155559B1 (en) | 2000-08-25 | 2006-12-26 | Lexar Media, Inc. | Flash memory architecture with separate storage of overhead and user data |
US6772274B1 (en) | 2000-09-13 | 2004-08-03 | Lexar Media, Inc. | Flash memory system and method implementing LBA to PBA correlation within flash memory array |
JP2002342256A (en) * | 2001-05-14 | 2002-11-29 | Hitachi Ltd | Data processor and method for updating data table |
JP2002342164A (en) * | 2001-05-22 | 2002-11-29 | Hitachi Ltd | Storage device, data processor, and method for controlling storing part |
KR100743221B1 (en) * | 2001-05-29 | 2007-07-26 | 주식회사 포스코 | Apparatus for Measuring Level of Melted Steel |
US6948026B2 (en) * | 2001-08-24 | 2005-09-20 | Micron Technology, Inc. | Erase block management |
EP1476873A4 (en) * | 2002-02-22 | 2006-07-05 | Lexar Media Inc | Removable memory media with integral indicator light |
JP4238514B2 (en) * | 2002-04-15 | 2009-03-18 | ソニー株式会社 | Data storage device |
US7398300B2 (en) | 2002-08-14 | 2008-07-08 | Broadcom Corporation | One shot RDMA having a 2-bit state |
KR100717690B1 (en) * | 2003-04-15 | 2007-05-11 | 현대중공업 주식회사 | The transmission control method using variable parameter map |
GB2400927A (en) * | 2003-04-22 | 2004-10-27 | Hewlett Packard Development Co | Method of managing memory by checking that none of the sectors in a block is needed before erasing the block. |
DE10341618A1 (en) * | 2003-09-10 | 2005-05-04 | Hyperstone Ag | Management of deleted blocks in flash memory |
JP3912355B2 (en) | 2003-10-14 | 2007-05-09 | ソニー株式会社 | Data management device, data management method, nonvolatile memory, storage device having nonvolatile memory, and data processing system |
WO2005043394A1 (en) * | 2003-10-31 | 2005-05-12 | Matsushita Electric Industrial Co., Ltd. | Information recording medium, information recording medium accessing apparatus and accessing method |
US7299314B2 (en) * | 2003-12-31 | 2007-11-20 | Sandisk Corporation | Flash storage system with write/erase abort detection mechanism |
JP4689247B2 (en) * | 2004-11-19 | 2011-05-25 | キヤノン株式会社 | Camera and control method thereof |
CN100345123C (en) * | 2004-11-27 | 2007-10-24 | 鸿富锦精密工业(深圳)有限公司 | Device and method for delaying nonvolatile memory using life |
US7962746B2 (en) | 2005-06-01 | 2011-06-14 | Panasonic Corporation | Computer system and program creating device |
JP2007011872A (en) * | 2005-07-01 | 2007-01-18 | Toshiba Corp | Memory card and control method therefor |
KR100746198B1 (en) * | 2005-07-08 | 2007-08-06 | 삼성전자주식회사 | Apparatus and method for storing data, and readable recording medium thereof |
CN100464375C (en) * | 2005-10-08 | 2009-02-25 | 晶豪科技股份有限公司 | Erasing method for reducing erasing time and preventing over erasing |
US7515500B2 (en) * | 2006-12-20 | 2009-04-07 | Nokia Corporation | Memory device performance enhancement through pre-erase mechanism |
KR100877609B1 (en) * | 2007-01-29 | 2009-01-09 | 삼성전자주식회사 | Semiconductor memory system performing data error correction using flag cell array of buffer memory and driving method thereof |
KR20080097766A (en) * | 2007-05-03 | 2008-11-06 | 삼성전자주식회사 | Method for separating storage space of writable medium, writable medium using the same and method for accessing writable medium, writable appratus using the same |
US8351290B1 (en) | 2008-09-12 | 2013-01-08 | Marvell International Ltd. | Erased page detection |
US20100131726A1 (en) * | 2008-11-26 | 2010-05-27 | Nokia Corporation | Methods, apparatuses, and computer program products for enhancing memory erase functionality |
US8407401B2 (en) | 2008-11-26 | 2013-03-26 | Core Wireless Licensing S.A.R.L. | Methods, apparatuses, and computer program products for enhancing memory erase functionality |
CN104598167B (en) * | 2011-06-27 | 2018-01-05 | 群联电子股份有限公司 | Memory erasing method, Memory Controller and memorizer memory devices |
WO2013140492A1 (en) * | 2012-03-19 | 2013-09-26 | 富士通株式会社 | Data access method and program |
TWI515737B (en) | 2013-12-09 | 2016-01-01 | 慧榮科技股份有限公司 | Data storage device and data erasing method |
US9286160B2 (en) | 2014-02-07 | 2016-03-15 | Stmicroelectronics S.R.L. | System and method for phase change memory with erase flag cells |
US10635307B2 (en) * | 2015-06-30 | 2020-04-28 | International Business Machines Corporation | Memory state indicator |
US10884945B2 (en) * | 2015-06-30 | 2021-01-05 | International Business Machines Corporation | Memory state indicator check operations |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5479638A (en) * | 1993-03-26 | 1995-12-26 | Cirrus Logic, Inc. | Flash memory mass storage architecture incorporation wear leveling technique |
US5485595A (en) * | 1993-03-26 | 1996-01-16 | Cirrus Logic, Inc. | Flash memory mass storage architecture incorporating wear leveling technique without using cam cells |
US5603001A (en) * | 1994-05-09 | 1997-02-11 | Kabushiki Kaisha Toshiba | Semiconductor disk system having a plurality of flash memories |
US5611067A (en) * | 1992-03-31 | 1997-03-11 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device having means for selective transfer of memory block contents and for chaining together unused memory blocks |
Family Cites Families (16)
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JP2856621B2 (en) * | 1993-02-24 | 1999-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Batch erase nonvolatile memory and semiconductor disk device using the same |
JPH06266596A (en) * | 1993-03-11 | 1994-09-22 | Hitachi Ltd | Flash memory file storage device and information processor |
JPH07153284A (en) * | 1993-11-29 | 1995-06-16 | Nec Corp | Non-volatile semiconductor memory and its control method |
JP3507132B2 (en) * | 1994-06-29 | 2004-03-15 | 株式会社日立製作所 | Storage device using flash memory and storage control method thereof |
US5809558A (en) * | 1994-09-29 | 1998-09-15 | Intel Corporation | Method and data storage system for storing data in blocks without file reallocation before erasure |
KR960029981A (en) * | 1995-01-27 | 1996-08-17 | 비. 제이. 올슨 | Flash memory mass storage structure using small amount of data storage |
JPH08212019A (en) * | 1995-01-31 | 1996-08-20 | Mitsubishi Electric Corp | Semiconductor disk device |
JPH09152983A (en) * | 1995-05-31 | 1997-06-10 | Lucent Technol Inc | Reentrant garbage collection processing in file system immanent in flash memory |
US5845313A (en) * | 1995-07-31 | 1998-12-01 | Lexar | Direct logical block addressing flash memory mass storage architecture |
US5835935A (en) * | 1995-09-13 | 1998-11-10 | Lexar Media, Inc. | Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory |
JP3604466B2 (en) * | 1995-09-13 | 2004-12-22 | 株式会社ルネサステクノロジ | Flash disk card |
US5701492A (en) * | 1996-03-29 | 1997-12-23 | Canon Kabushiki Kaisha | Fail-safe flashing of EPROM |
US5805882A (en) * | 1996-07-19 | 1998-09-08 | Compaq Computer Corporation | Computer system and method for replacing obsolete or corrupt boot code contained within reprogrammable memory with new boot code supplied from an external source through a data port |
GB2317722B (en) * | 1996-09-30 | 2001-07-18 | Nokia Mobile Phones Ltd | Memory device |
US5956473A (en) * | 1996-11-25 | 1999-09-21 | Macronix International Co., Ltd. | Method and system for managing a flash memory mass storage system |
US6778443B2 (en) * | 2001-12-25 | 2004-08-17 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device having memory blocks pre-programmed before erased |
-
1997
- 1997-06-25 JP JP16919997A patent/JP3718578B2/en not_active Expired - Lifetime
-
1998
- 1998-06-10 US US09/095,620 patent/US6144607A/en not_active Expired - Lifetime
- 1998-06-23 CN CNB981150497A patent/CN1146795C/en not_active Expired - Lifetime
- 1998-06-23 EP EP98111553A patent/EP0887735A3/en not_active Ceased
- 1998-06-23 MY MYPI98002843A patent/MY119727A/en unknown
- 1998-06-24 KR KR1019980023823A patent/KR100578427B1/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5611067A (en) * | 1992-03-31 | 1997-03-11 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device having means for selective transfer of memory block contents and for chaining together unused memory blocks |
US5479638A (en) * | 1993-03-26 | 1995-12-26 | Cirrus Logic, Inc. | Flash memory mass storage architecture incorporation wear leveling technique |
US5485595A (en) * | 1993-03-26 | 1996-01-16 | Cirrus Logic, Inc. | Flash memory mass storage architecture incorporating wear leveling technique without using cam cells |
US5603001A (en) * | 1994-05-09 | 1997-02-11 | Kabushiki Kaisha Toshiba | Semiconductor disk system having a plurality of flash memories |
Also Published As
Publication number | Publication date |
---|---|
JP3718578B2 (en) | 2005-11-24 |
EP0887735A2 (en) | 1998-12-30 |
JPH1115705A (en) | 1999-01-22 |
KR19990007270A (en) | 1999-01-25 |
EP0887735A3 (en) | 2001-12-05 |
CN1206149A (en) | 1999-01-27 |
CN1146795C (en) | 2004-04-21 |
US6144607A (en) | 2000-11-07 |
KR100578427B1 (en) | 2006-09-20 |
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