MXPA97004312A - Method for the deposition of diamond type carbon films - Google Patents

Abstract

The diamond-like carbon is deposited on a deposition substrate (46) in a deposition apparatus (40) which can be evacuated and refilled with a carbonaceous gas. A plasma (68) is generated in the gas by heating a filament (62) within the chamber (42) to produce electrons, and positively deriving the filaments (62) from the deposition chamber wall (44) to accelerate the electrons towards the carbonaceous gas. The carbonaceous gas dissociates and ionizes in the resulting plasma (68) to produce positively charged carbon ions. The deposition substrate (46) inside the chamber (42) is negatively derived with respect to the wall of the deposition chamber (44), accelerating the carbon ions so that they are deposited on the surface of the substrate (4).

Description

METHOD FOR THE DEPOSITION OF DIAMOND-TYPE CARBON FILMS BACKGROUND OF THE INVENTION This invention relates to a plasma-ion deposition of a film on a substrate and, more particularly, to the deposition at low pressure, on a large scale, of a diamond-like carbon film. Diamond-like carbon, sometimes also known as DLC, is a carbon that contains solids, or carbon and hydrogen, and that has an amorphous structure. DLC has a hardness and wear resistance that approaches that of diamond. The hardness and resistance to the use of DLC are superior to those of many commonly available water resistant coatings such as carbides and nitrides. The coefficient of friction of the DLC is still lower than that of diamond and other common coatings. The dry friction coefficient of the DLC is comparable to that of many oil lubricated materials. Because the DLC is amorphous, it covers surfaces evenly without the variations found in crystalline coatings. Due to this combination of properties, DLC coatings are used for a variety of low-friction and wear-resistant applications. The diamond type coal is applied as a coating to the surfaces to improve their properties. Various application technologies are available, including ion beam and plasma deposition techniques. In the ion beam approach, a carbonaceous precursor dissociates and ionizes at a source, and the resulting ions are accelerated to collide on a deposition substrate. Ion beam deposition requires a line of sight from the source to the deposition substrate and, consequently, large-scale deposition, irregular substrates require extensive substrate manipulation to drive the ion beam in order to fall on the various regions of the substrate. In the plasma-assisted deposition techniques, a plasma is formed and the carbonaceous precursor is injected into the plasma. The precursor is dissociated and the resulting carbon ions are deposited on the surface of the deposition substrate from the plasma. The various plasma deposition techniques differ from the approach by which the plasma is formed and in the method of applying a voltage to the deposition substrate. The conventional techniques aided by plasma use radio frequency energy, a microwave, electron-cyclotron resonance, or high-pressure DC energy to form the plasma. These various techniques, although feasible, suffer from a lack of ionic energy control capacity and an inability to easily graduate to large systems that are of interest to cover large items such as automotive paints or large numbers of small items at a time. The reason for the inability to graduate the process is the difficulty in efficiently coupling radiofrequency and microwave energy for large volumes. There is a need for an improved approach for the large-scale deposition of diamond-like carbon on single or multiple deposition substrates, in a highly controlled manner. The present invention satisfies this need, and further provides related advantages. SUMMARY OF THE INVENTION The present invention provides a method for the large-scale deposition of diamond-like carbon on deposition substrates, and covered substrates prepared by the method. The approach of the invention allows large and complex deposition substrates of simple or complex shapes, or large numbers of smaller deposition substrates of simple or complex shapes, to be economically coated with diamond-like carbon. The process is easily controllable, achieving a good capacity for reproduction. No sample handling is required to achieve deposition on the substrate surface, including deposition in recesses, holes, and other regions out of line of sight. Multiple plasma sources are not required to cover complex configured substrates or multiple substrates, but may be used in some cases. According to the invention, a method for the deposition of a diamond-like carbon film with a precisely controlled ionic energy on a deposition substrate uses a deposition apparatus comprising a deposition chamber having a deposition chamber wall , a vacuum pump communicable in a controllable manner with the deposition chamber, a source of a carbonaceous gas communicable in a controllable manner with the deposition chamber, means for generating a plasma in a gas contained within the deposition chamber , and a derivative voltage / current source connected in a controllable manner between the substrate of the deposition substrate and the wall of the deposition chamber. The method includes supporting a deposition substrate on the substrate of the deposition substrate, evacuating the deposition chamber, introducing a carbonaceous gas into the deposition chamber from the source of a carbonaceous gas up to a pressure of from about 0.01 to about 10 millitor, and depositing a diamond-like carbon film on the substrate at a substrate temperature of not more than about 300 ° C, and preferably as low a temperature as possible. The use of relatively low pressure minimizes the charge exchange in the plasma, and the consequent degradation of the ionic energy. The deposition step includes the steps of generating a plasma in the carbonaceous gas within the deposition chamber, and negatively deriving the deposition substrate in relation to the wall of the deposition chamber. The apparatus of the invention includes a source of an envelope plasma. The term "envelope plasma" as used herein refers to a low pressure plasma surrounding the workpiece except for areas on the surface of the workpiece that are intentionally protected from the plasma such as masked areas or areas that contact a workpiece holder, and also have low load exchange. An envelope plasma, in which the workpiece is completely immersed, is to be distinguished from a regional plasma that can be produced, for example, at the site where an ion beam hits a surface. Although both involve the production of a plasma, they present quite different problems because in the case of an envelope plasma it is an objective to produce a plasma that completely surrounds the workpiece (except for masked or support areas, as noted). above) and to be uniform in order to treat the work piece uniformly. As will be discussed subsequently, neither such objective nor such constraint exist in the case of a regional plasma. The approach of the invention is different from that of the above plasma processing approaches in which an envelope plasma is used to produce a uniform coating on a substrate. In the technique of luminescent discharge, the pressure is high, in the range of 10 millitor to several Torr. Plasma production arises from an applied voltage between the workpiece and the camera. The control capacity of the ionic energy of the plasma is limited due to the exchange of charge. Because the substrate is the source of emitted electrons, when an electrically insulating DLC film is deposited, arcing often occurs with the damage associated with the film and substrate, as well as the completion of the deposition process. In the intensified luminescent discharge technique, a separate filament emitter is provided, but the chamber pressure is still high, approximately 15-250 millitorr, and the charge exchange again limits the ionic energy and deposition efficiency. In the processing of the plasma source, the source of the plasma is remote not local. Consequently, it is difficult to obtain a uniform plasma around the workpiece. In the present approach, the means for generating a plasma preferably include a filament with a filament current source connected through the filament for the production of electrons, although other electron sources such as a hollow cathode can also be used. A discharge voltage source controllably derives the filament from the wall of the deposition chamber. In operation, the filament is heated to a thermionic temperature to emit electrons. The wall of the chamber is the anode with respect to the cathode filament, so that the emitted electrons are separated in the chamber to interact energetically with the gas inside the chamber to form the plasma. The carbonaceous gas dissociates and ionizes, producing carbon ions in the plasma. Hydrogen ions and other radicals can also occur as a result of dissociation. The deposition substrate is derived in a negative way (either continuously by DC or driven) with respect to the wall of the deposition chamber and therefore of the plasma, so that the positive ions are directed from the plasma to the substrate. deposition to be deposited on it. The processes of plasma formation and deposition therefore operate independently of each other and can be controlled separately. The voltage and density of the plasma are selected to ensure that the ionic coating surrounding the deposition substrate is relatively thin. The pressure is selected simultaneously so that the load exchange within the coating is minimal. It is desirable to obtain a satisfactory deposition with a thin ionic coating and a low charge exchange, since the thickness of this ionic coating determines the smallest dimension, such as a recess amplitude, which can be deposited and the charge exchange influences the ionic energy. In the present case, the smallest dimension in which deposition can occur is of the order of 1/2 millimeter, which is much smaller than what can be achieved in ion beam deposition. The present invention provides an advance in the technique of deposition of diamond-like carbon films. Other features and advantages of the present invention will become apparent from the following more detailed description of the preferred embodiment taken in conjunction with the accompanying drawings, which illustrate, by way of example, the principles of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a block flow diagram for a method of deposition of a diamond-like carbon film; Figure 2 is a schematic illustration of an apparatus according to the invention; and Figure 3 is a schematic sectional view of a deposition substrate with a diamond-like carbon film covering thereon, prepared according to the approach of the invention. DETAILED DESCRIPTION OF THE INVENTION Figure 1 is a block diagram illustrating the approach of the invention. A deposition apparatus number 20 is provided. A preferred deposition apparatus 40 is illustrated in Figure 2. The apparatus 40 includes a chamber 42 having a vacuum closure chamber wall 44. The chamber 42 should be of a size large enough to receive a deposition substrate 46 (or multiple substrates) therein. The deposition substrate can be made of any feasible material, and some examples of interest include flat carbon steel, tool steel, stainless steel, aluminum alloys, and titanium alloys. The deposition substrate 46 is desirably supported on a support 48 which is electrically isolated from the chamber wall 44 (except for the application of an electrical bypass of the deposition substrate, to be subsequently treated). Optionally, there may be a temperature control means such as an auxiliary heater 45 or a cooling coil 47 to maintain the substrate 46 within the desired temperature range for deposition. The heater 45 can be equivalently a cooling board or other device that acts to maintain the deposition substrate at a desired temperature. However, in most cases, no means of temperature control is needed, and the substrate can be maintained within a desired temperature range for deposition by controlling plasma parameters. The atmosphere inside the chamber 42 is controlled by a combination of evacuation and back-flushing. A vacuum pump 50 communicates with the interior of the chamber 42 through a controllable gate valve 52. Preferably, the vacuum pump 50 includes both a diffusion pump and a mechanical pump of sufficient size to achieve a relatively high vacuum. , of the order of 10 ~ 6 Torr inside the chamber 42, if desired.

However, the vacuum level can be controlled by the operation of the gate valve 52 and in particular it can be adjusted to a lower vacuum if desired. After evacuation, the chamber 42 is refilled with a carbonaceous reactive gas from a gas source 54. The gas source includes a gas supply 56 that communicates with the interior of the chamber 42 through a valve of re-gassing 58. The gas source 54 supplies a reactive carbon gas source; a gas containing silicon or a gas mixture containing silicon and hydrogen; a mixture of a gas containing silicon, a gas containing carbon, and hydrogen; any of these gases mixed together or with an inert gas; or an inert gas from the gas supply 56. The reactive carbon gas source can be any source that is feasible to decompose to produce activated carbon ions and / or carbon, which can be deposited on the deposition substrate 46. Preferred reactive carbon gas sources are methane (CH4), acetylene (C2H2), butene, and toluene. The total gas pressure within the chamber 42 is controlled to be from about 0.01 to about 10 millitor. One convenient way to accurately control the gas pressure is to open the gate valve 52 to allow the vacuum pump 50 to pump the chamber 42 into a vacuum slightly larger than desired (ie low pressure). The backflushing valve 58 is opened as necessary to allow gas from the supply 56 to flow into the chamber 42 to establish the desired total pressure. The vacuum within the chamber 42 is thus a continuously pumped dynamic vacuum which is effective to maintain the desired atmosphere in a stable state manner and to entrain impurities such as could be directed out of the deposition substrate 46 or chamber wall 44 Alternatively, but also within the scope of the invention, the chamber 42 could be pumped in a static manner by first evacuating the chamber with the vacuum pump 50 and closing the gate valve 52. The gas is refilled through the valve 58 until the desired pressure is reached and the valve 58 is closed. In operation, the deposition substrate 46 is held within the chamber 42, preferably on the support 48, number 22. The chamber 42 is evacuated, number 24, and the required gaseous atmosphere, number 26, is introduced. The atmosphere can be an inert atmosphere to initially allow the cleaning obtained by ionic spray of the surface of the substrate, thus changing the atmosphere to the carbonaceous source. The diamond type coal is deposited, number 28. During deposition, the temperature of the substrate is not greater than about 300 ° C, and more preferably it is as low as possible. If the temperature is greater than about 300 ° C, a carbonaceous layer is formed on or just below the surface of the substrate, but the layer is not diamond-like carbon and is typically graphite. To deposit the diamond-like carbon, a local plasma is produced within the chamber 42 by operating a source of local envelope plasma 60 within the chamber 42, number 30. As previously discussed, a source of local envelope plasma is different of a remote plasma source that can operate in another chamber, requiring a plasma diffusion to the processing chamber 42. It is also distinct from a regional plasma source that produces a plasma at a specific location on a surface where a plasma is directed. ion or other beam. The plasma source 60 includes an electron emitter, preferably in the form of one or more filaments 62 located within the chamber 42 and more preferably adjacent to the chamber wall 44. More than one filament may be placed in various places around the perimeter of the chamber 42 in order to adjust the shape and density of the resultant plasma to completely and uniformly wrap the deposition substrate (s) placed inside the chamber. The plasma is partially ionized, instead of weakly ionizing or ionizing completely. A "partially ionized" plasma is a plasma that has an ion-atom ratio in the plasma of about 0.01-0.10. A weakly ionized plasma has an ion-atom ratio of less than about 0.01, while a fully ionized plasma has an ion-atom ratio of more than about 0.10. A source of emitting current 64 applies a VFILAMENT voltage across the filament 62, and therefore supplies a current to the filament 62. The current flowing through the filament 62 heats the filament and causes the emission of electrons from the filament towards the interior of the chamber 62. A filament bypass voltage 66 that negatively derives the filament 62 from the chamber wall 44, VDESCARGA of typically approximately 30-150 volts, is applied between the filament 62 and the chamber wall 44 The thermionic electrons emitted from the filament 62 are directed into the chamber 42 via the bypass voltage 66. The electrons interact with the gas in the chamber 42 to create a plasma 68 containing carbonaceous ions, radicals, and hydrogen atomic and molecular. A derivation voltage of the deposition substrate 70, VIDIVATION; preferably from 0 to approximately 3000 volts, it is applied between the deposition substrate 46 (or the portion of the support 48 which is in electrical communication with the deposition substrate 46) and the chamber wall 44, number 32. The substrate of deposition 46 becomes negative or cathodic with respect to chamber wall 44 via voltage 70. The cathodic potential of deposition substrate 46 accelerates the carbon and hydrogen ions in plasma 68 to deposition substrate 46 to deposit them thereon. . The branch voltage source 70 can be driven or continuous DC. A layer 80 of diamond-like carbon is deposited on a surface 82 of the deposition substrate 46, as illustrated in Figure 3. The diamond-like carbon may be almost pure carbon, or it may be carbon with hydrogen dissolved therein. The composition of the coating may also include other elements that occur in the carbonaceous gas and are released into the plasma when the gas decomposes. The adulterating elements may be introduced as gases separated from the gas supply 56, if desired. All of these coal-based compositions and variations of composition are included - 1.6 - within the term "diamond-like carbon", as used herein. The layer 80 is deposited on all the exposed surfaces 82 of the deposition substrate 46. In the illustration of Figure 3, there is no deposition on a lower surface 84 because the lower surface 84 rests on the substrate support 48 during the deposition. in the preferred approach. Surface regions can be intentionally masked to prevent deposition, if desired. However, the deposition can be carried out easily on all the surfaces of the deposition substrate 46 by suspending the substrate from the support. A feature of the present approach is that the layer 80 can be deposited in recesses such as recess 88. Because plasma surrounds the deposition substrate, access to the line of sight from the source to the substrate is not required. The value of the shunt voltage 70 and the density of the plasma allow the ionic coating surrounding the deposition substrate to be relatively thin. The size of the ionic coating determines the smallest recess in which deposition can occur, and in the case of the voltages typically used for the bypass voltage 70, deposition can occur in recesses having a diameter as small as approximately 1 / 2 mm. One of the problems commonly found in the deposition of diamond-like carbon layers on some substrates, which use the above processes, is to obtain good adhesion between the DLC layer and the substrate. In many cases, particularly for metal substrates, it is necessary to deposit a bonding layer on the substrate before depositing the diamond-like carbon layer. In the present approach, two methods have been developed to increase the adhesion of the DLC film to the substrate. In the first technique, the surface of the deposition substrate is first cleaned by cleaning obtained by ion spray. Argon is supplied from the gas supply 56 to form the plasma. The argon ions impact the surface of the deposition substrate to clean it by ion spray and remove the near surface region of the substrate. Other active gases such as hydrogen can also be used for cleaning. After the cleaning is completed, the cleaning gas is pumped out of the system and the carbonaceous gas source is introduced. The deposition is conducted with a high energy of the carbonaceous ions, at a potential of approximately 1500-3000 volts and a low current density of less than approximately 0.1 - l. milliamperes / cm2, obtained by adjusting the derivation voltage and filament emission. A thin layer of carbide, typically about 0.1 micrometer thick, grows slowly from the deposition substrate to serve as a transition layer. After the transition layer is formed, the deposition parameters vary to reduce the ion energy to a few hundred (typically less than about 600) volts and increase the current density to about 5 milliamperes / cm 2 or less. The higher current density results in a faster deposition of the diamond-like carbon layer that lies on the transition layer. The resulting diamond-like carbon layer adheres well to the deposition substrate. This approach has been demonstrated for aluminum, M-2 tool steel, and 304 stainless steel deposition substrates. In the second technique, an amorphous layer bonded by hydrogenated silicon or hydrogenated silicon carbide is deposited before the deposition of the DLC film, as previously treated. The binding layer is applied in one embodiment by the use of a high concentration silane (SiH4) or other silicon-containing gas, from 100 percent to a minimum percentage in a mixture with hydrogen or helium, for example. After argon the cleaning obtained by ion spray, the silane or its mixture is introduced into the chamber. By heating the filament and applying the discharge voltage, a plasma is formed. Plasma breaks down silane and produces silicon ions and other radicals in plasma as well as hydrogen. A layer of hydrogenated silicon (a-Si: H) is deposited when a bypass voltage is applied to the deposition substrate. If, in addition to the silane gas, a carbonaceous gas such as methane is added to the chamber during the deposition of the bonding layer, a bonding layer of hydrogenated silicon carbide (a-SixC: H) is formed. The typical operational parameters for the deposition of the tie layers (a-Si: H) or (a-SixC: H) are a chamber pressure of 0.5 millitor, a discharge voltage of 50 volts, a bypass voltage of 400 volts, and a current density of 0.1-3 milliamperes / cm2. The use of silane gas in high concentrations can increase safety problems during handling and ventilation. According to the above, an alternative approach is to use a low silane concentration, on the order of about 1.35 percent by volume, in a mixture with helium or hydrogen. Due to the low concentration of silicon in the mixture, high pressure processing is preferred for a high proportion of deposition of the bonding layer. A luminescent discharge technique can be used for this portion of the processing. As discussed above, if a carbonaceous gas is added to the chamber as well, an amorphous a-SixC: H is obtained. Typical operational parameters are a gas pressure of 1.5 Torr (1.35 volume percent silane in hydrogen), a negative tap voltage of 800 volts, and a current density of 1 milliampere / cm2. After deposition of the binding layer of a-Si: H or a-SixC: H by any of these methods, the chamber is evacuated and the methane or other source of carbonaceous gas feasible is introduced into the chamber for the deposition of DLC as previously described. The following examples are proposed to illustrate aspects of the invention. However, they should not be construed as limiting the invention in any respect. Example 1 A diamond-like carbon layer about 4 micrometers thick was deposited on a flat piece of an aluminum deposition substrate-390 using the approach of Figure 1 and the apparatus of Figure 2. After loading the substrate of deposition, chamber 42 was pumped to a vacuum of 3 x 10 ~ 6 Torr and refilled with argon at a pressure of 5 x 10 ~ 4 Torr.

The deposition substrate was cleaned by ion spray of argon for 20 minutes using a bypass voltage 70 of 1100 volts and a current density of 0.3 milliamperes / cm2. The flow of argon was gradually quenched and a methane flow was introduced into the chamber 42 at a pressure of 5 x 10"4 Torr, while maintaining the plasma so that a contamination layer on the substrate could not re-form. The deposition voltage and the current density were kept at the same values as in the cleaning obtained by ionic spray for one hour, to deposit the transition layer having a thickness of approximately 0.1 micrometer. The voltage was reduced to 500 volts and the current density was increased to 5 milliamperes per square centimeter for a period of one hour, to deposit a uniform film of the diamond-like carbon layer 80 having a thickness of approximately 4 micrometers. Example 1 was repeated, except that the deposition substrate was M-2 tool steel, the operating parameters and the results were substantially EXAMPLE 3 Example 1 was repeated, except that the deposition substrate was 304 stainless steel. The operating parameters and results were substantially the same. Example 4 Example 1 was repeated, except that the deposition substrate was an automotive piston made of Al-390 alloy. The operating parameters were substantially the same. After the deposition of the diamond-like carbon layer, the piston was carefully inspected. The diamond-like carbon layer was approximately 4 micrometers thick. It was substantially uniform on both the outer and inner walls of the piston and in the annular grooves of the piston on the external diameter of the piston. Example 5 Example 1 was repeated, except that a large deposition chamber of 4 feet in diameter by 8 feet in length was used, and the substrates were 304 stainless steel, tool steel M-2, and aluminum-390. The same results were obtained substantially. Example 6 A DLC film of approximately 2 micrometers in thickness was deposited on flat pieces of 304 stainless steel after first depositing a layer of a-Si: H using the luminescent discharge method. After loading the substrates and pumping the chamber to approximately 0.02 millitorr, the samples were cleaned by ion spray of argon for 5 minutes at 450 volts and 0.5 milliamperes / cm2 of current density. A mixture of 1.35 volume percent silane in hydrogen was introduced into the chamber at a pressure of 1.5-2 Torr. A bypass voltage of 800 volts was applied to the substrates to generate a luminescent discharge at a current density of approximately 1 milliampere / cm2. After 30 minutes of deposition of a-Si: H on the surface of the substrate, the gas flow was discontinued and the chamber stopped pumping. Methane was fed into the chamber at a pressure of 0.5 millitorr. A discharge of 75 volts and a current of 1 ampere was produced using the filament, and a 200 volt branch was applied to the parts at a current density of 0.7 milliamperes / cm2. The resulting DLC film was approximately 2 micrometers thick and the underlying a-Si: H silicon binding layer was 0.1-0.2 micrometers thick. Example 7 The specimens from the deposition substrates prepared in Examples 1-3 and 6 were studied by Raman spectroscopy to verify the character of the diamond-like carbon layers. For comparison, a specimen of a diamond-like carbon layer was also analyzed on a 304 stainless steel by a commercial ion beam process. In all four cases, the coatings were found to be substantially equal, verifying that the plasma-ion deposition process of the invention is successful in the deposition of a diamond-like carbon coating. Although a particular embodiment of the invention has been described in detail for purposes of illustration, various modifications and improvements can be made without departing from the spirit and scope of the invention. According to the foregoing, the invention is not limited except by the appended claims.

Claims (15)

1. NOVELTY OF THE INVENTION Having described the present invention, it is considered as a novelty and therefore the property described in the following claims is claimed as property. A method of depositing a diamond-like carbon film on a deposition substrate, comprising the steps of: providing a deposition substrate; producing a plasma in a carbonaceous gas having a pressure of from about 0.01 to about 10 millitorr contacting the deposition substrate; and depositing a diamond-like carbon film on the substrate from the plasma with the substrate at a temperature of no more than about 300 ° C. The method according to claim 1, characterized in that the step of providing a deposition substrate includes the steps of: providing a deposition apparatus comprising a deposition chamber having a deposition chamber wall, a vacuum pump that is communicates in a controllable manner with the deposition chamber, a source of a carbonaceous gas communicable in a controllable manner with the deposition chamber, means for generating a plasma in a gas contained within the deposition chamber, a substrate substrate of deposition within the deposition chamber, and a voltage / current derivation source connected in a controllable manner between the substrate of the deposition substrate and the wall of the deposition chamber; supporting a deposition substrate on the support of the deposition substrate; and evacuate the deposition chamber. The method according to claim 2, characterized in that the deposition step includes the steps of negatively deriving the deposition substrate in relation to the deposition chamber wall with the derivation voltage / current source. The method according to claim 2, characterized in that the step of providing a deposition apparatus includes the step of providing a deposition apparatus wherein the means for generating the plasma includes a filament, a filament current source connected in a controllable manner through the filament, and a discharge voltage source connected in a controllable manner between the filament and the deposition chamber wall. The method according to claim 4, characterized in that the step of producing a plasma includes the steps of passing a sufficient current through the filament with the current source to heat the filament to a thermionic temperature, and derive the filament with respect to the deposition chamber wall with a voltage of from about 30 to about 150 volts. The method according to claim 2, characterized in that the step of negatively bypass includes the step of negatively deriving the deposition substrate relative to the wall of the deposition chamber with a voltage of from 0 to about 3000 volts. The method according to claim 2, characterized in that it includes the additional step, after the support stage and before the evacuation step, of preparing the surface of the deposition substrate for the deposition of a diamond-like carbon film. The method according to claim 7, characterized in that the step of providing includes the steps of providing a source of an inert gas communicable in a controllable manner with the deposition chamber, and wherein the preparation step includes additional steps of introducing an inert gas into the deposition chamber from the source of an inert gas, generating a plasma in the inert gas inside the deposition chamber, and negatively deriving the deposition substrate in relation to the deposition chamber wall with the derivation voltage source. The method according to claim 7, characterized in that the step of providing includes the steps of providing a source of a silicon-containing gas communicable in a controllable manner with the deposition chamber and wherein the preparation step includes additional steps of introducing a silicon-containing gas into the deposition chamber from the silicon-containing gas source, generating a plasma in the silicon-containing gas within the deposition chamber, and negatively deriving the deposition substrate in relation to the deposition chamber wall with the derivation voltage source. The method according to claim 2, characterized in that the step of negatively deriving the deposition substrate includes the steps of initially deriving the deposition substrate with a relatively high voltage applied to a relatively low current for a first period of time, and then from this deriving the deposition substrate with a relatively low voltage applied to a relatively high current during a second period of time. The method according to claim 2, characterized in that the step of introducing a carbonaceous gas includes the steps of introducing a mixture of carbonaceous gas and a second gas. The method according to claim 2, characterized in that the step of introducing a carbonaceous gas includes the step of introducing a carbonaceous gas selected from the group consisting of methane, acetylene, butene, and toluene. The method according to claim 2, characterized in that the step of supporting a deposition substrate includes the step of providing a deposition substrate made of a material selected from the group consisting of aluminum, a titanium alloy, a flat carbon steel , a tool steel and stainless steel. The method according to claim 2, characterized in that the step of negatively bypass includes the step of negatively deriving the deposition substrate in relation to the deposition chamber wall with a continuous DC voltage / derivation voltage. The method according to claim 2, characterized in that the step of negatively bypass includes the step of negatively deriving the deposition substrate in relation to the deposition chamber wall with a derivation voltage / pulse current source.