MXPA02004223A - THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF. - Google Patents

THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF.

Info

Publication number
MXPA02004223A
MXPA02004223A MXPA02004223A MXPA02004223A MXPA02004223A MX PA02004223 A MXPA02004223 A MX PA02004223A MX PA02004223 A MXPA02004223 A MX PA02004223A MX PA02004223 A MXPA02004223 A MX PA02004223A MX PA02004223 A MXPA02004223 A MX PA02004223A
Authority
MX
Mexico
Prior art keywords
films
thermoelectric materials
molecules
precursor
cause
Prior art date
Application number
MXPA02004223A
Other languages
Spanish (es)
Inventor
Wu Judy
Original Assignee
Univ Kansas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Kansas filed Critical Univ Kansas
Publication of MXPA02004223A publication Critical patent/MXPA02004223A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H10N10/8552—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen the compounds being superconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0548—Processes for depositing or forming superconductor layers by precursor deposition followed by after-treatment, e.g. oxidation

Abstract

Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting T1-containing films (e.g., T1-1212 or T1-2212) in an Hg-vapor environment so as to cause a substitution of T1 by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial T1-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900 °C for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50 %. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor. A vapor is introduced into the reaction system simultaneous to or shortly after the perturbation step so as to cause molecules which are within the vapor and are different than the first molecules to replace the first molecules in the precursor.
MXPA02004223A 1999-10-26 2000-10-25 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF. MXPA02004223A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42742899A 1999-10-26 1999-10-26
PCT/US2000/029818 WO2001031659A2 (en) 1999-10-26 2000-10-25 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF

Publications (1)

Publication Number Publication Date
MXPA02004223A true MXPA02004223A (en) 2004-04-21

Family

ID=23694832

Family Applications (1)

Application Number Title Priority Date Filing Date
MXPA02004223A MXPA02004223A (en) 1999-10-26 2000-10-25 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF.

Country Status (6)

Country Link
JP (1) JP2004500298A (en)
AU (1) AU3434301A (en)
BR (1) BR0015099A (en)
CA (1) CA2389454A1 (en)
MX (1) MXPA02004223A (en)
WO (1) WO2001031659A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096438A2 (en) * 2002-05-08 2003-11-20 Massachusetts Institute Of Technology Self-assembled quantum dot superlattice thermoelectric materials and devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5769943A (en) * 1993-08-03 1998-06-23 California Institute Of Technology Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques
US6069312A (en) * 1994-01-28 2000-05-30 California Institute Of Technology Thermoelectric materials with filled skutterudite structure for thermoelectric devices
US5994639A (en) * 1997-03-25 1999-11-30 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Thermodynamically metastable skutterudite crystalline-structured compounds

Also Published As

Publication number Publication date
AU3434301A (en) 2001-05-08
JP2004500298A (en) 2004-01-08
CA2389454A1 (en) 2001-05-03
WO2001031659A2 (en) 2001-05-03
BR0015099A (en) 2006-06-13
WO2001031659A3 (en) 2001-11-01

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