BR0015099A - hg thin film superconductors, thermoelectric materials and their manufacturing methods - Google Patents

hg thin film superconductors, thermoelectric materials and their manufacturing methods

Info

Publication number
BR0015099A
BR0015099A BRPI0015099-1A BR0015099A BR0015099A BR 0015099 A BR0015099 A BR 0015099A BR 0015099 A BR0015099 A BR 0015099A BR 0015099 A BR0015099 A BR 0015099A
Authority
BR
Brazil
Prior art keywords
films
thermoelectric materials
precursor
molecules
manufacturing methods
Prior art date
Application number
BRPI0015099-1A
Other languages
Portuguese (pt)
Inventor
Judy Wu
Shao Lin Yan
Yiuan Xie
Original Assignee
Univ Kansas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Kansas filed Critical Univ Kansas
Publication of BR0015099A publication Critical patent/BR0015099A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H10N10/8552—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen the compounds being superconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0548—Processes for depositing or forming superconductor layers by precursor deposition followed by after-treatment, e.g. oxidation

Abstract

"SUPERCONDUTORES COM FILME FINO DE Hg, MATERIAIS TERMOELéTRICOS E MéTODOS DE FABRICAçãO DOS MESMOS". São fornecidos filmes supercondutores contendo Hg aperfeiçoados e materiais termoelétricos. Os filmes são fabricados por recozimento de filmes de partida contendo TI (por exemplo TI-1212 ou TI-2212) em um ambiente contendo vapor de Hg para causar a substituição de TI por Hg sem alteração substancial da estrutura cristalina dos filmes de partida. De preferência, um corpo compreendendo um substrato tendo a filme epitaxial contendo TI sobre si é recozido em condições de vácuo com uma massa à base de Hg; as condições de recozimento típicas são 600 - 900<198>C por um período de cerca de 1 - 20 horas. Os produtos finais de filme contendo Hg têm um J~ c~ de pelo menos 10¬ 6¬ A/cm¬ 2¬ (100 K, OT) e um X~ min~ de até cerca de 50%. Os materiais termoelétricos são preparados por perturbação de um precursor cristalino tendo uma estrutura semelhante à do material final para fazer com que uma primeira molécula seja liberada do precursor. Um vapor é introduzido no sistema reacional ao mesmo tempo que a etapa de perturbação ou imediatamente após a mesma para fazer com que moléculas que estejam no vapor e sejam diferentes das primeiras moléculas substituam as primeiras moléculas no precursor."Hg FILM SUPERCONDUCTORS, THERMAL ELECTRICAL MATERIALS AND MANUFACTURING METHODS". Superconducting films containing improved Hg and thermoelectric materials are provided. Films are fabricated by annealing TI-containing starting films (for example TI-1212 or TI-2212) in an Hg vapor-containing environment to cause replacement of TI with Hg without substantially altering the crystal structure of the starting films. Preferably, a body comprising a substrate having the TI-containing epitaxial film is annealed under vacuum conditions with a Hg-based mass; Typical annealing conditions are 600 - 900 ° C for a period of about 1 - 20 hours. The Hg-containing film end products have a Jc of at least 10¬6¬A / cm¬2¬ (100 K, OT) and an X ~min of up to about 50%. Thermoelectric materials are prepared by disturbing a crystalline precursor having a structure similar to that of the final material to cause a first molecule to be released from the precursor. A vapor is introduced into the reaction system at the same time as the perturbation step or immediately thereafter to make molecules that are steamed and different from the first molecules replace the first molecules in the precursor.

BRPI0015099-1A 1999-10-26 2000-10-25 hg thin film superconductors, thermoelectric materials and their manufacturing methods BR0015099A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42742899A 1999-10-26 1999-10-26
PCT/US2000/029818 WO2001031659A2 (en) 1999-10-26 2000-10-25 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF

Publications (1)

Publication Number Publication Date
BR0015099A true BR0015099A (en) 2006-06-13

Family

ID=23694832

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0015099-1A BR0015099A (en) 1999-10-26 2000-10-25 hg thin film superconductors, thermoelectric materials and their manufacturing methods

Country Status (6)

Country Link
JP (1) JP2004500298A (en)
AU (1) AU3434301A (en)
BR (1) BR0015099A (en)
CA (1) CA2389454A1 (en)
MX (1) MXPA02004223A (en)
WO (1) WO2001031659A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096438A2 (en) * 2002-05-08 2003-11-20 Massachusetts Institute Of Technology Self-assembled quantum dot superlattice thermoelectric materials and devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5769943A (en) * 1993-08-03 1998-06-23 California Institute Of Technology Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques
US6069312A (en) * 1994-01-28 2000-05-30 California Institute Of Technology Thermoelectric materials with filled skutterudite structure for thermoelectric devices
US5994639A (en) * 1997-03-25 1999-11-30 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of The University Of Oregon Thermodynamically metastable skutterudite crystalline-structured compounds

Also Published As

Publication number Publication date
MXPA02004223A (en) 2004-04-21
AU3434301A (en) 2001-05-08
CA2389454A1 (en) 2001-05-03
WO2001031659A3 (en) 2001-11-01
WO2001031659A2 (en) 2001-05-03
JP2004500298A (en) 2004-01-08

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