MX365076B - Aplicaciones de resonador para langasita y sus isomorfos. - Google Patents

Aplicaciones de resonador para langasita y sus isomorfos.

Info

Publication number
MX365076B
MX365076B MX2016000270A MX2016000270A MX365076B MX 365076 B MX365076 B MX 365076B MX 2016000270 A MX2016000270 A MX 2016000270A MX 2016000270 A MX2016000270 A MX 2016000270A MX 365076 B MX365076 B MX 365076B
Authority
MX
Mexico
Prior art keywords
isomorphs
langasite
resonator applications
derive
resonator elements
Prior art date
Application number
MX2016000270A
Other languages
English (en)
Other versions
MX2016000270A (es
Inventor
S Patel Mihir
K Sinha Bikash
Yamate Tsutomu
Original Assignee
Schlumberger Technology Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schlumberger Technology Bv filed Critical Schlumberger Technology Bv
Publication of MX2016000270A publication Critical patent/MX2016000270A/es
Publication of MX365076B publication Critical patent/MX365076B/es

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02039Characteristics of piezoelectric layers, e.g. cutting angles consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/22Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of acoustic effects
    • G01K11/26Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of acoustic effects of resonant frequencies
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/32Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0022Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02062Details relating to the vibration mode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • H03H9/02102Means for compensation or elimination of undesirable effects of temperature influence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • H03H9/02133Means for compensation or elimination of undesirable effects of stress
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/177Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

En la presente se describen osciladores que utilizan elementos de resonador formados de langasita o uno de sus isomorfos. Los elementos de resonador incluyen orientaciones de cristal que son compensadas por tensión y/o temperatura. Los resonadores vibran a una frecuencia oscilante en un modo de corte de espesor de vibración. La frecuencia oscilante se puede utilizar para derivar temperatura, derivar presión y/o para aplicaciones de control de frecuencia.
MX2016000270A 2013-07-11 2014-07-10 Aplicaciones de resonador para langasita y sus isomorfos. MX365076B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361845262P 2013-07-11 2013-07-11
PCT/US2014/046110 WO2015006536A1 (en) 2013-07-11 2014-07-10 Resonator applications for langasite and its isomorphs

Publications (2)

Publication Number Publication Date
MX2016000270A MX2016000270A (es) 2016-04-25
MX365076B true MX365076B (es) 2019-05-22

Family

ID=52280594

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016000270A MX365076B (es) 2013-07-11 2014-07-10 Aplicaciones de resonador para langasita y sus isomorfos.

Country Status (6)

Country Link
US (1) US10355664B2 (es)
EP (1) EP3020130B1 (es)
JP (1) JP2016531472A (es)
BR (1) BR112016000450A2 (es)
MX (1) MX365076B (es)
WO (1) WO2015006536A1 (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015116104A1 (en) * 2014-01-30 2015-08-06 Empire Technology Development Llc Crystal oscillators and methods for fabricating the same
US11359983B1 (en) * 2018-04-04 2022-06-14 Precis Llc Thickness-shear mode resonators
US11754452B2 (en) 2018-08-17 2023-09-12 Schlumberger Technology Corporation Resonating sensor for high-pressure and high-temperature environments
US20220381626A1 (en) * 2019-12-19 2022-12-01 Siemens Energy, Inc. Turbine inlet temperature calculation using acoustics
US11984863B2 (en) 2020-07-08 2024-05-14 Kampanics, L.L.C. Sensor with resonator supported on a substrate
CN112615603B (zh) * 2020-12-18 2024-02-09 广东广纳芯科技有限公司 一种具有poi结构的掺钪氮化铝高频谐振器及制造方法
US11598684B1 (en) 2021-05-14 2023-03-07 Precis Llc Thickness-shear mode resonators

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57129012A (en) * 1980-11-05 1982-08-10 Schlumberger Overseas Stress compensation type crystal vibrator
US4419600A (en) 1980-11-05 1983-12-06 Schlumberger Technology Corporation Stress-compensated quartz resonators
RU2073952C1 (ru) 1995-04-27 1997-02-20 Товарищество с ограниченной ответственностью "ФОМОС" Монолитный кристаллический фильтр
AT410737B (de) 2001-05-31 2003-07-25 Avl List Gmbh Piezoelektrisches resonatorelement der kristallographischen punktgruppe 32
JP2006238290A (ja) 2005-02-28 2006-09-07 Mitsubishi Materials Corp 共振子
EP1926211A3 (en) * 2006-11-21 2013-08-14 Imec Diamond enhanced thickness shear mode resonator
US8294332B2 (en) 2007-07-02 2012-10-23 Schlumberger Technology Corporation Pressure transducer
US8395456B2 (en) 2009-02-04 2013-03-12 Sand 9, Inc. Variable phase amplifier circuit and method of use
JP2010216896A (ja) 2009-03-13 2010-09-30 Mitsubishi Materials Corp センサ装置
US8136406B2 (en) 2009-03-31 2012-03-20 Schlumberger Technology Corporation Pressure transducer with piezoelectric crystal for harsh environment use

Also Published As

Publication number Publication date
BR112016000450A2 (pt) 2018-05-02
EP3020130A4 (en) 2016-10-19
EP3020130A1 (en) 2016-05-18
US10355664B2 (en) 2019-07-16
US20160173058A1 (en) 2016-06-16
EP3020130B1 (en) 2018-03-28
MX2016000270A (es) 2016-04-25
WO2015006536A1 (en) 2015-01-15
JP2016531472A (ja) 2016-10-06

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