Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Autonoma De Nuevo LeonfiledCriticalUniv Autonoma De Nuevo Leon
Priority to MX2014016128ApriorityCriticalpatent/MX364086B/en
Publication of MX2014016128ApublicationCriticalpatent/MX2014016128A/en
Publication of MX364086BpublicationCriticalpatent/MX364086B/en
AND THE PRODUCTION METHOD THEREOF The present disclosure is related to a process for manufacturing In2S3-Sb2S3 thin films for solar cells with efficiencies of 4.9%, from which it is possible to obtain a cell with a superstratum structure, consisting generally in sequentially depositing various films on a conductive glass substrate (ITO), configured as glass/ITO/TiO2(d)/ TiO2(p)/In2S3-Sb2S3/CuSCN/Au with different heat treatments in variable atmospheres be it air, vacuum or argon.
MX2014016128A2014-12-192014-12-19Nanocrystalline solar cells based on thin layers of antimony and indium sulfide.
MX364086B
(en)