MX2007015027A - Detector de silicio que extiende la sensibilidad de silicio desde 200 y hasta 1100 nm con alta eficiencia. - Google Patents

Detector de silicio que extiende la sensibilidad de silicio desde 200 y hasta 1100 nm con alta eficiencia.

Info

Publication number
MX2007015027A
MX2007015027A MX2007015027A MX2007015027A MX2007015027A MX 2007015027 A MX2007015027 A MX 2007015027A MX 2007015027 A MX2007015027 A MX 2007015027A MX 2007015027 A MX2007015027 A MX 2007015027A MX 2007015027 A MX2007015027 A MX 2007015027A
Authority
MX
Mexico
Prior art keywords
silicon
high efficiency
cost effective
sensibility
sro
Prior art date
Application number
MX2007015027A
Other languages
English (en)
Inventor
Luis Raul Berriel Valdos
Dainet Berman Mendoza
Carlos Dominguez Horna
Mariano Aceves Mijares
Original Assignee
Inst Nac De Astrofisica Optica
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Nac De Astrofisica Optica filed Critical Inst Nac De Astrofisica Optica
Priority to MX2007015027A priority Critical patent/MX2007015027A/es
Priority to US12/322,429 priority patent/US20090218649A1/en
Publication of MX2007015027A publication Critical patent/MX2007015027A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type

Abstract

La tecnología de silicio es sin lugar a dudas la más económica y madura, y por tanto los foto-detectores de silicio son los más económicos y simples de fabricar. Sin embargo, el silicio tiene limitaciones para detectar radiación debajo de 400 nm (UV). Aquí se presenta el desarrollo y caracterización de un sensor de Silicio con SRO que presenta una alta eficiencia en la región Ultravioleta del espectro electromagnético en el rango de 200-400 nm. El dispositivo desarrollado es una integración de una película de SRO (óxido de silicio rico en silicio) con un fotodiodo de silicio y donde el proceso de fabricación es totalmente compatible con la tecnología de silicio. Tiene como principales ventajas su compatibilidad con el silicio, su proceso de fabricación muy simple y su costo muy económico .
MX2007015027A 2007-11-21 2007-11-21 Detector de silicio que extiende la sensibilidad de silicio desde 200 y hasta 1100 nm con alta eficiencia. MX2007015027A (es)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MX2007015027A MX2007015027A (es) 2007-11-21 2007-11-21 Detector de silicio que extiende la sensibilidad de silicio desde 200 y hasta 1100 nm con alta eficiencia.
US12/322,429 US20090218649A1 (en) 2007-11-21 2009-01-31 Highly efficient silicon detector with wide spectral range

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MX2007015027A MX2007015027A (es) 2007-11-21 2007-11-21 Detector de silicio que extiende la sensibilidad de silicio desde 200 y hasta 1100 nm con alta eficiencia.

Publications (1)

Publication Number Publication Date
MX2007015027A true MX2007015027A (es) 2009-05-21

Family

ID=41012526

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2007015027A MX2007015027A (es) 2007-11-21 2007-11-21 Detector de silicio que extiende la sensibilidad de silicio desde 200 y hasta 1100 nm con alta eficiencia.

Country Status (2)

Country Link
US (1) US20090218649A1 (es)
MX (1) MX2007015027A (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010272577A (ja) * 2009-05-19 2010-12-02 Takehisa Sasaki 放射線検出素子、及び、放射線検出装置
JP2019047037A (ja) * 2017-09-05 2019-03-22 株式会社東芝 光検出器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093576A (en) * 1991-03-15 1992-03-03 Cree Research High sensitivity ultraviolet radiation detector
IT1277856B1 (it) * 1995-02-09 1997-11-12 Univ Roma Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale.
US20080139004A1 (en) * 2006-12-12 2008-06-12 Massachusetts Institute Of Technology Light emission from silicon-based nanocrystals by sequential thermal annealing approaches
US7569864B2 (en) * 2006-05-03 2009-08-04 Atomic Energy Council-Institute Of Nuclear Energy Research Silicon-rich-oxide white light photodiode
US7611922B2 (en) * 2006-11-13 2009-11-03 Dongbu Hitek Co., Ltd. Image sensor and method for manufacturing the same

Also Published As

Publication number Publication date
US20090218649A1 (en) 2009-09-03

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