MD3320G2 - Process for obtaining zinc oxide nanostructures - Google Patents

Process for obtaining zinc oxide nanostructures

Info

Publication number
MD3320G2
MD3320G2 MDA20060100A MD20060100A MD3320G2 MD 3320 G2 MD3320 G2 MD 3320G2 MD A20060100 A MDA20060100 A MD A20060100A MD 20060100 A MD20060100 A MD 20060100A MD 3320 G2 MD3320 G2 MD 3320G2
Authority
MD
Moldova
Prior art keywords
obtaining
source
zinc oxide
oxide nanostructures
mixture
Prior art date
Application number
MDA20060100A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD3320F1 (en
Inventor
Эмиль РУСУ
Вячеслав УРСАКИ
Георге СТРАТАН
Александру БУРЛАКУ
Ион ТИГИНЯНУ
Леонид КУЛЮК
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MDA20060100A priority Critical patent/MD3320G2/en
Publication of MD3320F1 publication Critical patent/MD3320F1/en
Publication of MD3320G2 publication Critical patent/MD3320G2/en

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention relates to the oxide material obtaining technology, in particular to processes for obtaining ZnO nanostructures with different morphological forms (nanothreads, nanotubes, nanoneedles, nanorods).Summary of the invention consists in obtaining ZnO nanostructures on silicon or sapphire supports, realizing the evaporation of a source, consisting of a mixture of ZnO powders and coal. Novelty of the invention consists in carrying out the environment evaporation of the mixture, the source temperature being maintained in the range of 900...1450°C, and the temperature gradient between the source and the support constitutes 10...120°C.
MDA20060100A 2006-03-24 2006-03-24 Process for obtaining zinc oxide nanostructures MD3320G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20060100A MD3320G2 (en) 2006-03-24 2006-03-24 Process for obtaining zinc oxide nanostructures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20060100A MD3320G2 (en) 2006-03-24 2006-03-24 Process for obtaining zinc oxide nanostructures

Publications (2)

Publication Number Publication Date
MD3320F1 MD3320F1 (en) 2007-05-31
MD3320G2 true MD3320G2 (en) 2007-12-31

Family

ID=38164628

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20060100A MD3320G2 (en) 2006-03-24 2006-03-24 Process for obtaining zinc oxide nanostructures

Country Status (1)

Country Link
MD (1) MD3320G2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD241Z (en) * 2009-12-29 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Method for producing PbS nanoparticles stabilized with gelatine
MD242Z (en) * 2010-01-26 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Method for producing hydrophilic PbS nanocrystals
MD4455C1 (en) * 2015-11-27 2017-07-31 Государственный Университет Молд0 Process for unseeded vapor production of ZnO single crystals
MD4500C1 (en) * 2015-07-23 2018-02-28 Государственный Университет Молд0 Process for gaseous-phase production of ZnO single crystals
MD4517C1 (en) * 2016-10-11 2018-04-30 Государственный Университет Молд0 Method for gaseous-phase production of ZnO single crystals without seed

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6918959B2 (en) * 2001-01-12 2005-07-19 Georgia Tech Research Corp Semiconducting oxide nanostructures

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6918959B2 (en) * 2001-01-12 2005-07-19 Georgia Tech Research Corp Semiconducting oxide nanostructures

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Liu D.F., Xiang Y.J., Zhang Z.X., Wang J.X., Gao Y., Song L., Growth of ZnO hexagonal nanoprisms, Nanotechonology 16, 2665, 2005. *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD241Z (en) * 2009-12-29 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Method for producing PbS nanoparticles stabilized with gelatine
MD242Z (en) * 2010-01-26 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Method for producing hydrophilic PbS nanocrystals
MD4500C1 (en) * 2015-07-23 2018-02-28 Государственный Университет Молд0 Process for gaseous-phase production of ZnO single crystals
MD4455C1 (en) * 2015-11-27 2017-07-31 Государственный Университет Молд0 Process for unseeded vapor production of ZnO single crystals
MD4517C1 (en) * 2016-10-11 2018-04-30 Государственный Университет Молд0 Method for gaseous-phase production of ZnO single crystals without seed

Also Published As

Publication number Publication date
MD3320F1 (en) 2007-05-31

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees