MD1707G2 - Procedeu de pasivare a defectelor structurale superficiale ale reţelei cristaline - Google Patents

Procedeu de pasivare a defectelor structurale superficiale ale reţelei cristaline Download PDF

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Publication number
MD1707G2
MD1707G2 MDA20000118A MD20000118A MD1707G2 MD 1707 G2 MD1707 G2 MD 1707G2 MD A20000118 A MDA20000118 A MD A20000118A MD 20000118 A MD20000118 A MD 20000118A MD 1707 G2 MD1707 G2 MD 1707G2
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MD
Moldova
Prior art keywords
passivation
crystal lattice
structural defects
defects
superficial
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Application number
MDA20000118A
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English (en)
Russian (ru)
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MD1707F1 (ro
Inventor
Валериан ДОРОГАН
Ион ТИГИНЯНУ
Татьяна ВИЕРУ
Родика СТУРЗА
Михаил МАНОЛЕ
Valeriu Coseac
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Валериан ДОРОГАН
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Application filed by Валериан ДОРОГАН filed Critical Валериан ДОРОГАН
Priority to MDA20000118A priority Critical patent/MD1707G2/ro
Publication of MD1707F1 publication Critical patent/MD1707F1/ro
Publication of MD1707G2 publication Critical patent/MD1707G2/ro

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Abstract

Invenţia se referă la tehnologia semiconductorilor, în special la procedeele de pasivare a defectelor structurale ale straturilor semiconductoare, şi poate fi utilizată pentru optimizarea tehnologiilor de confecţionare a fotoreceptoarelor cu structura de tip Schottky sau MOS.Esenţa invenţiei constă în izolarea electrică a defectelor prin oxidarea electrochimică a suprafeţei stratului de tip “i” la tensiune înaltă, apoi stratul format de oxid anodic se înlătură chimic de pe suprafaţa fără defect a cristalului.
MDA20000118A 2000-07-17 2000-07-17 Procedeu de pasivare a defectelor structurale superficiale ale reţelei cristaline MD1707G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20000118A MD1707G2 (ro) 2000-07-17 2000-07-17 Procedeu de pasivare a defectelor structurale superficiale ale reţelei cristaline

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20000118A MD1707G2 (ro) 2000-07-17 2000-07-17 Procedeu de pasivare a defectelor structurale superficiale ale reţelei cristaline

Publications (2)

Publication Number Publication Date
MD1707F1 MD1707F1 (ro) 2001-07-31
MD1707G2 true MD1707G2 (ro) 2002-02-28

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MDA20000118A MD1707G2 (ro) 2000-07-17 2000-07-17 Procedeu de pasivare a defectelor structurale superficiale ale reţelei cristaline

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MD (1) MD1707G2 (ro)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Electrochemical sulfur passivation of GaAs, Appl. Phys. Lett., 60(18), 1992, *
Hose X.Y., Cai W.Z., He Z.Q., Hao. P H., Li Z.S., Ding X.M., Wang X., *
Kirkland W. Vogt, Kohl A. Paul, Gallium arsenide passivation through nitridation with hydrazine, J. Appl. Phys., 74(10), 1993, p.6448 - 6450 *

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MD1707F1 (ro) 2001-07-31

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