LU72605A1 - - Google Patents

Info

Publication number
LU72605A1
LU72605A1 LU72605A LU72605A LU72605A1 LU 72605 A1 LU72605 A1 LU 72605A1 LU 72605 A LU72605 A LU 72605A LU 72605 A LU72605 A LU 72605A LU 72605 A1 LU72605 A1 LU 72605A1
Authority
LU
Luxembourg
Application number
LU72605A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445137A external-priority patent/DE2445137C3/en
Priority claimed from DE19742445078 external-priority patent/DE2445078C3/en
Priority claimed from DE19742445091 external-priority patent/DE2445091A1/en
Priority claimed from DE2445079A external-priority patent/DE2445079C3/en
Priority claimed from DE19752505816 external-priority patent/DE2505816C3/en
Priority claimed from DE2513207A external-priority patent/DE2513207C2/en
Application filed filed Critical
Publication of LU72605A1 publication Critical patent/LU72605A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
LU72605A 1974-09-20 1975-05-28 LU72605A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE2445137A DE2445137C3 (en) 1974-09-20 1974-09-20 Method for operating an n-channel memory FET, n-channel memory FET for carrying out the method and applying the method to the n-channel memory FETs of a memory matrix
DE19742445078 DE2445078C3 (en) 1974-09-20 Electronic memory produced using integrated technology
DE19742445091 DE2445091A1 (en) 1974-09-20 1974-09-20 Storage FET with insulated storage gate - has insulated control gate and is fitted with high internal capacitance between gates
DE2445079A DE2445079C3 (en) 1974-09-20 1974-09-20 Storage field effect transistor
DE19752505816 DE2505816C3 (en) 1974-09-20 1975-02-12 Method for operating an n-channel memory FET, n-channel memory FET for carrying out the method and applying the method to the n-channel memory FETs of a memory matrix
DE2513207A DE2513207C2 (en) 1974-09-20 1975-03-25 n-channel memory FET

Publications (1)

Publication Number Publication Date
LU72605A1 true LU72605A1 (en) 1975-08-21

Family

ID=27544228

Family Applications (1)

Application Number Title Priority Date Filing Date
LU72605A LU72605A1 (en) 1974-09-20 1975-05-28

Country Status (1)

Country Link
LU (1) LU72605A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2603154A1 (en) * 1976-01-28 1977-08-04 Siemens Ag LSI programmable 3 dimensional matrix memory - has eight two dimensional 8x64 matrix memory circuits of insulated gate FET's
DE2711895A1 (en) * 1976-03-26 1977-10-06 Hughes Aircraft Co FIELD EFFECT TRANSISTOR WITH TWO GATE ELECTRODES AND METHOD FOR MANUFACTURING IT
DE2727419A1 (en) * 1976-06-18 1977-12-29 Ncr Co MATRIX MEMORY
DE2638730A1 (en) * 1974-09-20 1978-03-02 Siemens Ag N-channel storage FET with floating storage gate - has storage gate controlled channel bounding FET source with thin insulator in between
DE2643948A1 (en) * 1976-09-29 1978-03-30 Siemens Ag Component module with matrix of storage FETs - has substrate layer on support, containing drain, channel and source regions partly coated by insulation
DE2643987A1 (en) * 1974-09-20 1978-03-30 Siemens Ag N-Channel storage FET with one or more gates - has semiconductor region insulated by charge reversing region from both main path connecting regions
DE2643932A1 (en) * 1974-09-20 1978-03-30 Siemens Ag N-Channel storage FET with one or several gates - has two conductive strips coupled to storage gate, each covering part of drain and source respectively

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638730A1 (en) * 1974-09-20 1978-03-02 Siemens Ag N-channel storage FET with floating storage gate - has storage gate controlled channel bounding FET source with thin insulator in between
DE2643987A1 (en) * 1974-09-20 1978-03-30 Siemens Ag N-Channel storage FET with one or more gates - has semiconductor region insulated by charge reversing region from both main path connecting regions
DE2643932A1 (en) * 1974-09-20 1978-03-30 Siemens Ag N-Channel storage FET with one or several gates - has two conductive strips coupled to storage gate, each covering part of drain and source respectively
DE2603154A1 (en) * 1976-01-28 1977-08-04 Siemens Ag LSI programmable 3 dimensional matrix memory - has eight two dimensional 8x64 matrix memory circuits of insulated gate FET's
DE2711895A1 (en) * 1976-03-26 1977-10-06 Hughes Aircraft Co FIELD EFFECT TRANSISTOR WITH TWO GATE ELECTRODES AND METHOD FOR MANUFACTURING IT
DE2727419A1 (en) * 1976-06-18 1977-12-29 Ncr Co MATRIX MEMORY
DE2643948A1 (en) * 1976-09-29 1978-03-30 Siemens Ag Component module with matrix of storage FETs - has substrate layer on support, containing drain, channel and source regions partly coated by insulation

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