LU52199A1 - - Google Patents

Info

Publication number
LU52199A1
LU52199A1 LU52199DA LU52199A1 LU 52199 A1 LU52199 A1 LU 52199A1 LU 52199D A LU52199D A LU 52199DA LU 52199 A1 LU52199 A1 LU 52199A1
Authority
LU
Luxembourg
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of LU52199A1 publication Critical patent/LU52199A1/xx

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645Combinations of only lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/00
LU52199D 1965-10-25 1966-10-19 LU52199A1 (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR36129A FR1485529A (fr) 1965-10-25 1965-10-25 Procédé de réalisation de shunts ohmiques d'émetteur sur un ensemble semiconducteur
FR36453A FR1473005A (fr) 1965-10-25 1965-10-28 Procédé de réalisation de dispositifs semiconducteurs à shunts ohmiques d'émetteur

Publications (1)

Publication Number Publication Date
LU52199A1 true LU52199A1 (en:Method) 1968-05-08

Family

ID=26166994

Family Applications (1)

Application Number Title Priority Date Filing Date
LU52199D LU52199A1 (en:Method) 1965-10-25 1966-10-19

Country Status (5)

Country Link
BE (1) BE688353A (en:Method)
CH (1) CH449783A (en:Method)
FR (2) FR1485529A (en:Method)
LU (1) LU52199A1 (en:Method)
NL (1) NL6615089A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979767A (en) * 1971-06-24 1976-09-07 Mitsubishi Denki Kabushiki Kaisha Multilayer P-N junction semiconductor switching device having a low resistance path across said P-N junction

Also Published As

Publication number Publication date
CH449783A (fr) 1968-01-15
FR1473005A (fr) 1967-03-17
BE688353A (en:Method) 1967-04-17
NL6615089A (en:Method) 1967-04-26
FR1485529A (fr) 1967-06-23

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