LU100140B1 - Circuit Breaker having Semiconductor Switch Element and Energy Absorbing Device - Google Patents

Circuit Breaker having Semiconductor Switch Element and Energy Absorbing Device Download PDF

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Publication number
LU100140B1
LU100140B1 LU100140A LU100140A LU100140B1 LU 100140 B1 LU100140 B1 LU 100140B1 LU 100140 A LU100140 A LU 100140A LU 100140 A LU100140 A LU 100140A LU 100140 B1 LU100140 B1 LU 100140B1
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LU
Luxembourg
Prior art keywords
circuit breaker
energy absorbing
absorbing device
contact surface
electrical energy
Prior art date
Application number
LU100140A
Other languages
German (de)
Inventor
Lise Donzel
Michael Hagemeister
Bernhard Doser
Reto Kessler
Original Assignee
Abb Schweiz Ag
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Publication date
Application filed by Abb Schweiz Ag filed Critical Abb Schweiz Ag
Priority to LU100140A priority Critical patent/LU100140B1/en
Application granted granted Critical
Publication of LU100140B1 publication Critical patent/LU100140B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • H01C17/281—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thick film techniques
    • H01C17/283—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/285—Precursor compositions therefor, e.g. pastes, inks, glass frits applied to zinc or cadmium oxide resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H01H2009/543—Contacts shunted by static switch means third parallel branch comprising an energy absorber, e.g. MOV, PTC, Zener
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H9/00—Details of switching devices, not covered by groups H01H1/00 - H01H7/00
    • H01H9/54—Circuit arrangements not adapted to a particular application of the switching device and for which no provision exists elsewhere
    • H01H9/541—Contacts shunted by semiconductor devices
    • H01H9/542—Contacts shunted by static switch means
    • H01H2009/544—Contacts shunted by static switch means the static switching means being an insulated gate bipolar transistor, e.g. IGBT, Darlington configuration of FET and bipolar transistor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermistors And Varistors (AREA)

Abstract

A circuit breaker (200) comprising a semiconductor switch element (210) and an energy absorbing device (220) is disclosed. The energy absorbing device (220) comprises at least one contact face (221) for establishing a contact with a terminal. The at least one contact face (221) is provided with an electrically conducting material which covers substantially the entire contact face

Description

CIRCUIT BREAKER HAVING SEMICONDUCTOR SWITCH ELEMENT AND
ENERGY ABSORBING DEVICE
Technical Field
The present disclosure relates to a circuit breaker having a semiconductor switch element and an energy absorbing device.
Background Art
In electro-mechanical switches, upon an opening action of a switch, energy is dissipated in an arc that bums when contact elements of the electro-mechanical switch are separated from each other. In contrast, when a solid state switch or semiconductor switch is used as a separation or isolation element in the current path to be switched, there is no arc, and the network energy after an opening operation of the semiconductor switch has to be dissipated as heat in an energy absorbing device. Also in so-called hybrid switches which combine a mechanical switching element and a solid state switch, such an energy absorbing device is employed. An energy absorbing device thus absorbs, i. e. transforms into heat, the energy stored in the electrical system to be switched, e. g. the inductive network energy.
Examples of an energy absorbing device includes a transient voltage suppressor (TVS) diode, a thermistor, a snubber device, or a metal oxide varistor. As an exemplification, in a metal oxide varistor, a thin slice of a ceramic material is contacted by means of electrodes on the respective contacting faces of the varistor. The contacting faces comprise a layer of a conducting material which is applied by screen printing and extends up to a predetermined distance of few millimeters to the edge of the surface of the slice to avoid spill-over of conductive material over the ceramic material edges. A rim, which is free of any conducting material, is present on each of the surfaces of the slices
An opening operation of the semiconductor switch leads to a transient energy incident, or energy pulse, in the energy absorbing device. Conventional energy absorbing devices, such as metal oxide varistors, tend to fail after a few 100 to 1000 energy pulses. A typical failure is a puncture through the ceramic material, typically located at the border of the electrode. Thus, the lifetime of a typical conventional varistor used as an energy absorbing device in a circuit breaker is low.
It is an object of the present disclosure to provide a circuit breaker having a semiconductor switch element and an energy absorbing device, wherein the lifetime is improved.
Brief Summary of the Invention
In view of the above, a circuit breaker according to claim 1, an apparatus according to claim 9, and a switchgear according to claim 10 are provided. Further aspects, advantages, and features of the present disclosure are apparent from the dependent claims, the description, and the accompanying drawings. The aspects discussed below may be freely combined with each other, as appropriate.
According to one aspect of the disclosure, a circuit breaker comprising a semiconductor switch element and an energy absorbing device is disclosed. The energy absorbing device comprises at least one contact face for establishing a contact with a terminal. The at least one contact face is provided with an electrically conducting material which covers substantially the entire contact face. A circuit breaker, as used herein, refers to a disconnector, a load switch, a load break switch, an isolator switch or the like, but is not limited to these specific examples. A circuit breaker operates typically at medium to high voltage, e. g. at a voltage above 200 V or above 350V or above 1 kV or above 10 kV. The circuit breaker may have a rated current of more than 5 A or more than 10 A. An example for a semiconductor switch element of the circuit breaker is a MOSFET or an IGBT or an IGCT.
An energy absorbing device according to the present disclosure has at least one contact face which is provided with a full-face electrically conducting material, i. e. the electrically conducting material extends essentially up to all the edges of the contact face. In the exemplary case of a metal oxide varistor comprising a slice of a ceramic material such as zinc oxide, there is virtually no rim free of conducting material on the respective surface of the slice. In other words: The conductive material is applied over the entire surface.
It was found that providing the electrically conducting material in a full-face configuration may enable withstanding a large number of energy pulses, e. g. more than 10000 or more than 20000 energy pulses. The lifetime of an energy absorbing device according to aspects and embodiments as described herein is thus increased.
In typical embodiments, the semiconductor switch element is adapted to perform repetitive switching operations. The semiconductor switch element may be adapted to perform at least 1000 or at least 2000 or at least 5000 switching operations.
In typical embodiments, the energy absorbing device comprises a metal oxide varistor. Typically, the energy absorbing device is composed of a metal oxide varistor. According to typical embodiments, the metal oxide varistor comprises a zinc oxide, e. g. it is a zinc oxide varistor.
According to an aspect of the disclosure, the energy absorbing device comprises a first contact face and a second contact face. The contact faces are typically opposite surfaces of a slice of a ceramic material, such as zinc oxide, and the opposite surfaces are separated from each other by a distance corresponding to the thickness of the slice of ceramic material. Typically, in an energy absorbing device comprising a first contact face and a second contact face, each of the contact faces is provided with an electrically conducting material which respectively covers substantially the entire respective contact face. The electrically conducting material on the first contact face is not directly electrically contacted with the electrically conducting material on the second contact face. Typically, the first contact face and the second contact face are arranged substantially in parallel to each other.
The shape of the energy absorbing device is not limited but may, as an example, be any one of a disc shape, a disc shape with a central hole* a shape having a square base area, a shape having a rectangular base area, a shape having a hexagonal base area or the like.
For example, the energy absorbing device is manufactured by slicing from a body of a ceramic material, such as zinc oxide. By slicing, the opposite surfaces may be aligned parallel to each other. Furthermore, by slicing, the opposite surfaces each may have a sharp edge, compared to more or less rounded edges of e. g. a sintered body. A sharp edge may permit to ensure that there is virtually no rim free of conductive material on the faces.
According to an aspect of the disclosure, the electrically conducting material comprises a full-face metallization layer. A metallization layer typically has a good current carrying capability. In an exemplary case of a metal oxide varistor as an energy absorbing device, a metallization layer may have an adhesion strength of more than 10 MPa, typically of more than 15 MPa. Alternatively or additionally, the foil resistivity of the metallization layer is between 2 μΩ-cm and 60 μΩ-cm, typically between 2 μΩ-cm and 30 μΩ-cm or between 2 μΩ-cm and 10 μΩ-cm.
In typical embodiments, the metallization layer is obtainable by any one of arc spraying, flame spraying, physical vapor deposition, chemical vapor deposition, or any combination thereof. Typically, the surface of the respective contact face to be provided with a metallization layer as an electrically conducting material is treated, or activated, before the metallization layer is applied. The treatment may e. g. comprise any one of chemical etching, laser treatment, grinding, or any combination thereof. The treatment may improve the adhesion strength of the metallization layer to the energy absorbing element.
According to an aspect of the disclosure, the metallization layer comprises at least one of the group consisting of: Aluminum, copper, zinc, brass, silver. A material of the metallization layer may be chosen according to typical needs of the energy absorbing element within the circuit breaker.
Silver is a metal with a very high electrical conductivity. As a noble metal, it has high corrosion/oxidation resistance and it can be soldered.
Copper has a slightly lower electrical conductivity and can be soldered. It may need protection against oxidation and corrosion..
Zinc has a comparably low electrical conductivity and forms a corrosion resistant protection layer which is removed for soldering.
Brass (CuZnx) can easily be soldered. It is softer than pure zinc and shows less oxidation than copper.
Aluminum has a high electrical conductivity. It forms a thin oxide layer, which makes it corrosion resistant.
According to an aspect of the disclosure, the metallization layer has a thickness in between 20 to 500 pm, typically in between 20 to 200 pm. Having a metallization layer in the given range, in particular for a metallization layer comprising aluminum, may help to decrease the foil resistivity of the metallization layer.
According to an aspect of the disclosure, the circuit breaker further comprises a mechanically separable pair of contacts in addition to the semiconductor switch element. Such a circuit breaker serves as a hybrid switch which combines a semiconductor switch operation and a mechanical switch operation. A further aspect of the disclosure is directed to a general electrical apparatus. The apparatus has a first electrical power side and a second electrical power side. A circuit breaker, as disclosed herein, is connected in between the first electrical power side and the second electrical power side. The circuit breaker may connect, e. g. selectably connect, the first electrical power side to the second electrical power side or interrupt the first electrical power side from the second electrical power side. A further aspect of the disclosure is directed to a switchgear. The switchgear provides an electrical connection between a first electrical power side, e. g. a busbar, and a second electrical power side, e. g. an electrical load side. The switchgear comprises a circuit breaker as disclosed herein, such that the electrical connection is interruptible.
Brief Description of the Drawings
The subject matter of the disclosure will be explained in more detail with reference to preferred exemplary embodiments which are illustrated in the accompanying drawings.
In the drawings:
Fig. 1 is a schematic perspective representation of a conventional energy absorbing device;
Fig. 2 is a schematic perspective representation of the conventional energy absorbing device of Fig. 1 in a damaged state;
Fig. 3 is a schematic perspective representation of an energy absorbing device for explaining an embodiment of the present disclosure;
Fig. 4 is a schematic circuit diagram of an electrical power system in which a circuit breaker having a semiconductor switch element and an energy absorbing device according to an embodiment of the present disclosure is in a conducting or closed state; and
Fig. 5 is a schematic circuit diagram similar to Fig. 4, with the circuit breaker in an open state.
Detailed Description of the Embodiments
Fig. 1 is a schematic perspective representation of a conventional energy absorbing device 120, e. g. a metal oxide varistor, which is typically used to protect electrical equipment against overvoltage induced by lightning and/or switching surges. These surge events are relatively seldom so that a conventional energy absorbing device 120, as schematically exemplified in Fig. 1, is operating few times during its life time. EEC 60099-4 requires that a metal oxide varistor withstands 20 charge transfers and IEC61643-11 requires 15 current pulses.
The conventional metal oxide varistor of Fig. 1 is made of a pill of ZnO ceramic and comprises a contact face 121 which is equipped with a metallization layer as a conducting material. The contact face 121 is connectible to a terminal, e. g. an electrode terminal for outside connection. The lower side (not visible in the perspective of in Fig. 1) is likewise equipped with a contact face for connection with an opposite electrode.
No conducting material is present in the vicinity of the edge of the respective surface of the slice, i. e. the metallization layer of the conventional energy absorbing device is not applied over the full surface up to the edge. Thus, a rim 125 free of any metallization is present. In traditional overvoltage protection use, this rim 125 ensures that no conductive material spill over the edges. Spill-over leads to breakdown.
An energy absorbing device used in a typical solid state circuit breaker, it will have to absorb the network energy each time the switch is operated. Typically, the number of switch operations is larger than 10000 times. If a conventional metal oxide varistor is used in a circuit breaker, a physical failure, such as a puncture, occurs after a comparatively low number of switch operations, or pulses, e. g. after a few 100 to 1000 pulses. An exemplification of a failure 126 is shown in Fig. 2 as a puncture at the metallization edge.
The inventors have performed pulse tests (a test series of repetitive high energy pulses) with samples of conventional metal oxide varistors as energy absorbing devices.
Three samples of an absorber of type V575LA80CP failed after 1000,1022, and 1488 pulses, respectively. Two samples of an absorber of type V25S285P failed after 421, and 423 pulses, respectively. One sample of an absorber of type B32K460 failed after 1192 pulses.
Fig. 3 shows a schematic perspective representation of an energy absorbing device 220 for explaining an embodiment of the present disclosure. A slice of a metal oxide material, e. g. ZnO, is manufactured by slicing from a larger body of ZnO, which leads to substantially exact parallel surfaces on the two short sides of the energy absorbing device 220. The edges of the energy absorbing device 220 according to the present embodiment are very sharp, as opposed to somewhat rounded edges of a sintered pill of a conventional metal oxide varistor.
On each of the parallel surfaces, a contact face 221 and a contact face 222, respectively, are formed for establishing a contact with a terminal, such as an electrode. The contact faces 221, 222 are each provided with an electrically conducting layer of aluminum. However, the material is not limited to aluminum, and other materials such as, but not limited to, copper, brass, zinc, silver may be used. In the present embodiment, the aluminum metallization is applied by arc spraying, but not limited to arc spraying, and other suitable methods such as, but not limited to, flame spraying, physical vapor deposition, chemical vapor deposition and the like can be used.
The electrically conducting material covers substantially the entire respective contact face 221, 222. In the present embodiment, the thickness of the aluminum metallization layer is about 50 pm, and the adhesion strength of the metallization layer to the surface of the slice is more than 10 MPa. The foil resistivity of the metallization layer in the present embodiment is about 10 μΩ-cm.
It was found that an energy absorbing device configured in such a manner can withstand a large number of pulses without any damage. The above-described pulse tests were performed with 10 samples of an energy absorbing device configured as disclosed herein. After 25000 pulses, the experiment was stopped, with all test samples still in a working condition. In particular, no edge puncture of the metallization layer occured.
The circuit breaker 200 may be comprised in an apparatus which needs an interruptible connection between a first electrical power side and a second electrical power side. In an open
State of the circuit breaker 200, the first electrical power side and the second electrical power side may be on different electrical potentials. Examples of the first electrical power side and the second electrical power side are without limitation a grid side of an electrical power network and a load side.
Fig. 4 shows a schematic circuit diagram of an electrical power system in which a circuit breaker 200 having a semiconductor switch element 210 and an energy absorbing device 220 according to the present embodiment is in a conducting or closed state. In the circuit breaker 200, the energy absorbing device 220 configured as described herein is connected in parallel to the semiconductor switch element 210. The semiconductor switch element 210, such as a power MOSFET or an IGBT, is in a conducting state in Fig. 4.
An equivalent voltage source 20, representing the grid side of the electrical power system, is connected to a first side of the circuit breaker 200. The grid stores network energy in a parasitic inductance 30. An impedance 50, representing the load side of the electrical power system, is connected to a second side of the circuit breaker 200.
As an example, the electrical power system is a switchgear in which the circuit breaker 200 is built in. For example, the equivalent voltage source 20 corresponds to a grid-connected side of the switchgear, such as a busbar of the switchgear or the like. Furthermore, the impedance 50 may correspond to a load-connected side of the switchgear. An example of the impedance 50 is an ohmic or inductive or capacitive load, such as a motor, a power electronics component or the like.
In the conducting state of the semiconductor switch element 210, the current I flows through the semiconductor switch element 210. An inductance, such as the parasitic inductance 30 of the grid or network, stores electrical energy in the corresponding magnetic field which is proportional to I2,1 being the current flowing through the inductance. In a condition where the current through the load is interrupted, such as a switching action or a failure, the energy stored in the inductance has to be absorbed.
Specifically, in a case such as a switching operation, the semiconductor switch element 210 is turned off, i. e. switches to the non-conducting state. Such a state is exemplified in the schematic circuit diagram of Fig. 5. The current commutates in the branch of the energy absorbing device 220, and the energy stored in the parasitic inductance is dissipated as heat in the energy absorbing device 220, making the current go to zero. The energy absorbing device 220 configured in a way as described herein is able to withstand a large number of such switching operations and/or energy pulses, such as more than 10000 or more than 20000 pulses.
Although the invention has been described on the basis of some preferred embodiments, those skilled in the art should appreciate that those embodiments should by no way limit the scope of the present invention. Without departing from the spirit and concept of the present invention, any variations and modifications to the embodiments should be within the apprehension of those with ordinary knowledge and skills in the art, and therefore fall in the scope of the present invention which is defined by the accompanied claims. -

Claims (10)

PATENT AN SPRÜ CHE LPATENT TO CHECK L 1. Leistungsschalter (200), umfassend ein Halbleiter-Schaltelement (210) und eine Energie-Absorptionseinrichtung (220), wobei die Energie-Absorptionseinrichtung (220) mindestens eine Kontaktfläche (221) 5 zum Herstellen eines Kontakts mit einem Anschluss umfasst, wobei die mindestens eine Kontaktfläche (221) mit einem elektrisch leitenden Material versehen ist, welches im Wesentlichen die gesamte Kontaktfläche bedeckt.A power switch (200) comprising a semiconductor switching element (210) and an energy absorber (220), wherein the energy absorber (220) comprises at least one contact surface (221) 5 for making contact with a terminal, wherein the at least one contact surface (221) is provided with an electrically conductive material which covers substantially the entire contact surface. 2. Leistungsschalter nach Anspruch 1, wobei das Halbleiter-Schaltelement (210) (210) dazu ) ausgebildet ist, mindestens 1000 Schaltvorgänge, vorzugsweise mindestens 2000 oder mindestens 5000 Schaltvorgänge durchzufuhren.2. The circuit breaker according to claim 1, wherein the semiconductor switching element (210) (210) for) is designed to perform at least 1000 switching operations, preferably at least 2000 or at least 5000 switching operations. 3. Leistungsschalter (200) nach Anspruch 1 oder 2, wobei die Energie-Absorptionseinrichtung (220) einen Metalloxid-Varistor umfasst.The power switch (200) of claim 1 or 2, wherein the energy absorber (220) comprises a metal oxide varistor. 4. Leistungsschalter (200) nach Anspruch 3, wobei der Metalloxid-Varistor ein Zinkoxid umfasst.4. The circuit breaker (200) of claim 3, wherein the metal oxide varistor comprises a zinc oxide. 5. Leistungsschalter (200) nach einem der vorhergehenden Anspriiche, wobei die Energie-Absorptionseinrichtung (220) eine erste Kontaktfläche (221) und eine zweite Kontaktfläche (222) umfasst, wobei jede der Kontaktflächen mit einem elektrisch ) leitenden Material versehen ist, welches jeweils im Wesentlichen die gesamte jeweilige Kontaktfläche (221, 222) bedeckt, wobei die erste Kontaktfläche (221) und die zweite Kontaktfläche (222) im Wesentlichen parallel zueinander ausgerichtet sind.A power switch (200) according to any one of the preceding claims, wherein the energy absorber (220) comprises a first contact surface (221) and a second contact surface (222), each of the contact surfaces being provided with an electrically conductive material, respectively substantially covers the entire respective contact surface (221, 222), wherein the first contact surface (221) and the second contact surface (222) are aligned substantially parallel to each other. 6. Leistungsschalter (200) nach einem der vorhergehenden Anspriiche, wobei das elektrisch leitende Material eine vollflächige Metallisierungsschicht umfasst. > 7. Leistungsschalter (200) nach Anspruch 6, wobei die Metallisierungsschicht zumindest eines aus der Grappe umfasst, die besteht aus: Aluminium, Kupfer, Zink, Messing, Silber.6. The circuit breaker (200) according to any one of the preceding Anspriiche, wherein the electrically conductive material comprises a full-surface metallization. The circuit breaker (200) of claim 6, wherein the metallization layer comprises at least one of the graphene, which consists of: aluminum, copper, zinc, brass, silver. 8. Leistungsschalter (200) nach einem der Anspriiche 6 oder 7, wobei die Metallisierungsschicht eine Dicke zwischen 20 und 500 pm, typischerweise zwischen 50 n«/1 ΟΑΠ ii-wt V»ol8. The circuit breaker (200) according to any one of claims 6 or 7, wherein the metallization layer has a thickness of between 20 and 500 μm, typically between 50 nmol / wt 9. Leistungsschalter (200) nach einem der vorhergehenden Ansprüche, wobei der Leistungsschalter (200) femer ein mechanisch trennbares Kontaktpaar zusätzlich zu dem Halbleiter-Schaltelement umfasst.The circuit breaker (200) of any one of the preceding claims, wherein the power switch (200) further comprises a mechanically separable contact pair in addition to the semiconductor switching element. 10. Vorrichtung mit einer ersten elektrischen Energieseite und einer zweiten elektrischen Energieseite, wobei ein Leistungsschalter (200) nach einem der Ansprüche 1 bis 9 zwischen die erste elektrische Energieseite und die zweite elektrische Energieseite geschaltet ist.10. A device having a first electrical energy side and a second electrical energy side, wherein a circuit breaker (200) is connected according to one of claims 1 to 9 between the first electrical energy side and the second electrical energy side. 11. Schaltanlage zum Zurverfügungsstellen einer trennbaren elektrischen Verbindung zwischen einer ersten elektrischen Energieseite und einer zweiten elektrischen Energieseite, wobei die Schaltanlage einen Leistungsschalter (200) nach einem der Ansprüche 1 bis 9 umfasst.11. Switchgear for the provision of a separable electrical connection between a first electrical energy side and a second electrical energy side, wherein the switchgear comprises a circuit breaker (200) according to one of claims 1 to 9.
LU100140A 2017-03-15 2017-03-15 Circuit Breaker having Semiconductor Switch Element and Energy Absorbing Device LU100140B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0494507A1 (en) * 1990-12-12 1992-07-15 Electric Power Research Institute, Inc High energy zinc oxide varistor
US6342828B1 (en) * 1997-01-16 2002-01-29 Asea Brown Boveri Ag Resistor which is designed in the form of a column and is resistant to high current in particular a varistor on a metal-oxide base, and method for producing such a resistor
US20080129442A1 (en) * 2004-12-22 2008-06-05 Abb Research Ltd. Method of Manufacturing a Varistor
US20150222111A1 (en) * 2012-08-27 2015-08-06 Abb Technology Ltd Apparatus arranged to break an electrical current
EP3091627A1 (en) * 2013-12-31 2016-11-09 Hyosung Corporation High-voltage dc circuit breaker

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0494507A1 (en) * 1990-12-12 1992-07-15 Electric Power Research Institute, Inc High energy zinc oxide varistor
US6342828B1 (en) * 1997-01-16 2002-01-29 Asea Brown Boveri Ag Resistor which is designed in the form of a column and is resistant to high current in particular a varistor on a metal-oxide base, and method for producing such a resistor
US20080129442A1 (en) * 2004-12-22 2008-06-05 Abb Research Ltd. Method of Manufacturing a Varistor
US20150222111A1 (en) * 2012-08-27 2015-08-06 Abb Technology Ltd Apparatus arranged to break an electrical current
EP3091627A1 (en) * 2013-12-31 2016-11-09 Hyosung Corporation High-voltage dc circuit breaker

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Effective date: 20180919