TW201218564A - Laminated electrostatic and surge protection device - Google Patents

Laminated electrostatic and surge protection device Download PDF

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Publication number
TW201218564A
TW201218564A TW99135361A TW99135361A TW201218564A TW 201218564 A TW201218564 A TW 201218564A TW 99135361 A TW99135361 A TW 99135361A TW 99135361 A TW99135361 A TW 99135361A TW 201218564 A TW201218564 A TW 201218564A
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Taiwan
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reaction
electrode
reaction electrode
tip
surge protection
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TW99135361A
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Chinese (zh)
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TWI495215B (en
Inventor
Zheng-Chun Hou
li-wen Zhu
Chao-Don Zhuang
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Walsin Technology Corp
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Priority to TW99135361A priority Critical patent/TW201218564A/en
Priority to CN201110007707.1A priority patent/CN102457057B/en
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Publication of TWI495215B publication Critical patent/TWI495215B/zh

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Abstract

The present invention provides a laminated electrostatic and surge protection device, which is formed as a multi-layer body by stacking multiple layers of insulating base material. The interior of the multi-layer body is configured with at least a first reaction electrode and a second reactive electrode, wherein the first reaction electrode and the second electrode are disposed opposite to each other with an interval. At least one of the first reaction electrode and the second reaction is formed with a tip electrode portion. The two opposite sides of the multi-layer body are configured with two external electrodes. When the laminated electrostatic and surge protection device according to the present invention is subjected to high voltage or high current, the tip electrode portion will generate the corona discharge or spark discharge, which may outwardly conduct the excessive charges through the external electrode to the ground providing the protection effect.

Description

201218564 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種電子保護元件,尤指一種運用電暈 放電(Corona discharge)與火花放電(Spark discharge)原 理所製成之積層式靜電及突波保護元件。 【先前技術】 目則在解決靜電(electrostatic discharge ;簡稱 ESD) 問題所使用的電子元件有採用變阻器(varist〇r)及瞬間電壓 抑制器(transient voltage suppresser,TVS)。變阻器是一 種回復型過電壓保護元件,利用材料本身的電阻值與電壓 的非線性關係保護工作線路,通常在正常電壓(工作電壓) 時’該元件的電阻值很高’電流通過工作線路;但是當工 作電壓超過一臨界值時’該變阻器的電阻值會大幅下降, 電流轉而流過該變阻器而到接地,將此高電壓能量排掉。 而瞬間電壓抑制器又比變阻器的實施電壓小,並會做 成二極體(diode)方式,工作原理同變阻器,僅使用不同材 料系統。也可以使用齊納二極體(Zenerdj〇de)解決ESD靜 電問題。 另有積層式結構的保護元件為疊層式的壓敏電阻 (Multi-layer Va「ist〇r,MLV)’其優點是比瞬間電壓抑制器 反應速度快 '電流流動速度優於瞬間電壓抑制器,但缺點 是經過多次大電流衝擊後,電性特性會逐漸劣化,產生漏 電流(丨R值降低)、工作電壓、元件壽命等方面的問題。例 如當元件劣化後,其起始工作電壓可能從原來的5〇〇v逐渐 201218564 提高’相對來講,元件的反應靈敏度即逐漸下降,當起始 工作電壓提升至極高後,保護元件最後便完全無法工作, 喪失保護作用》 因此’就上述所提及之靜電保護元件產品,所採用的 保護機制’皆為使用特定金屬氧化物材質’例如氧化鋅基 材陶竟椅料’在瞬間高電壓或瞬間高電流發生時,材料本 身的電阻值快速下降,形成電橋導通、短路,將突然產生 的能量導掉。 【發明内容】 本發明之主要目的係提供一種積層式靜電及突波保護 凡件’在積層堆疊的絕緣基材内設有具尖端部之反應電 極,利用尖端放電或火花放電原理,將高能量的電荷經由 次端邛傳遞至接地,防止靜電、突波破壞其它電子元件, 達到保護目的。 鲁 為達成前述目的,本發明係包含有: 複層絕緣基材,係相互堆疊而形成一複層式本體,於該 複層式本體内部係設有至少一第一反應電極及—第二反應 ^極’其中该第一反應電極及第二反應電極係對向設置且 持間距,5亥第一反應電極及第二反應電極至少一者係 形成-尖端電極部’該尖端電極部之夾角角度㈣小於18〇 度; 兩外電極’係設於該複層式本體的兩相對侧面而分別與 該第一反應電極及第二反應電極電性連接。 ”中該複層式本體内部可設有複數個第一反應電極及 4 201218564 複數個第二反應電極,各第一 形成一尖端電極部,該些第— 端電極部係對向設置。 反應電極及各第二反應電極係 反應電極及第二反應電極之尖 錯由前述結構,當本發明在實際應用時面臨高電麼、 高電流的狀況’在第一反應電極或第二反應電極的其中一 尖端電極部《集高密度的電子,產生電暈放電或火花放 電的現象而將電荷從其中的一反應電極傳遞至另一反應電201218564 VI. Description of the Invention: [Technical Field] The present invention relates to an electronic protection component, and more particularly to a laminated electrostatic and protrusion formed by the principles of Corona discharge and spark discharge. Wave protection component. [Prior Art] The electronic components used in solving the problem of electrostatic discharge (ESD) include a varistor and a transient voltage suppressor (TVS). A varistor is a recovery type overvoltage protection component that protects the working circuit by the nonlinear relationship between the resistance value of the material and the voltage. Usually, at normal voltage (operating voltage), the resistance of the component is high. The current passes through the working circuit; When the operating voltage exceeds a critical value, the resistance value of the varistor will drop drastically, and the current will flow through the varistor to the ground to discharge the high voltage energy. The transient voltage suppressor is smaller than the varistor, and will be diode-mode. It works in the same way as a varistor, using only different material systems. The Zener diode (Zenerdj〇de) can also be used to solve ESD static problems. The protective element of the laminated structure is a multi-layer Va "ist〇r (MLV)", which has the advantage of being faster than the transient voltage suppressor. The current flow speed is better than the instantaneous voltage suppressor. However, the disadvantage is that after many large current surges, the electrical characteristics will gradually deteriorate, causing problems such as leakage current (reduced 丨R value), operating voltage, component life, etc. For example, when the component deteriorates, its initial operating voltage It may be improved from the original 5〇〇v gradually to 201218564. Relatively speaking, the sensitivity of the component's response gradually decreases. When the initial operating voltage is raised to a very high level, the protective element will eventually become completely inoperable and lose its protective effect. The protection mechanism used in the electrostatic protection component products mentioned above is the resistance value of the material itself when a specific metal oxide material such as zinc oxide substrate ceramic chair material is used in the event of instantaneous high voltage or instantaneous high current. Rapid decline, forming a bridge conduction, short circuit, and the sudden generation of energy is led out. [Summary of the Invention] The main object of the present invention is to provide A layered electrostatic and surge protection piece is provided with a reaction electrode with a tip end in the laminated insulating substrate, and the high-energy charge is transmitted to the ground through the secondary end by the principle of tip discharge or spark discharge, preventing Electrostatics and surges destroy other electronic components for protection purposes. In order to achieve the above object, the present invention comprises: a plurality of layers of insulating substrates stacked on each other to form a multi-layer body, the internal body of the multi-layer body Providing at least one first reaction electrode and a second reaction electrode, wherein the first reaction electrode and the second reaction electrode are oppositely disposed and spaced apart, and at least one of the first reaction electrode and the second reaction electrode Forming - tip electrode portion 'the angle of the tip electrode portion (four) is less than 18 degrees; the two outer electrodes ' are disposed on opposite sides of the multi-layer body and electrically connected to the first reaction electrode and the second reaction electrode, respectively The plurality of first reaction electrodes and 4 201218564 plurality of second reaction electrodes may be disposed inside the multi-layer body, and each of the first forms a tip electrode portion, and the first Based on the terminal electrode portion is provided. The configuration of the reaction electrode and the second reaction electrode of the reaction electrode and the second reaction electrode is caused by the foregoing structure, and when the present invention is faced with a high electric current and a high current condition in the practical application, the first reaction electrode or the second reaction electrode One of the tip electrode portions "collects high-density electrons to generate a corona discharge or a spark discharge to transfer charge from one of the reaction electrodes to another."

極’再經外電極傳遞至接地,從而將大量的電荷排除掉, 發揮靜電、突波保護作用。 當增加第一反應電極和第二反應電極的疊層數時,將 可增加元件的電荷傳導特性及元件耐用度,延長保護元件 之使用壽命。 經由調整第一、第二反應電極其尖端電極部的形狀、 間距,可調整工作起始工作電壓,獲得所需的元件靈敏度; 當改變絕緣基材的材料、反應電極材質,可提高耐電壓程 度及耐受次數。 【實施方式】 本發明是運用電暈放電(Corona discharge)與火花放 電(Spark discharge)理論,設計出一種新的保護元件。電 軍放電也叫尖端放電,其原理是:帶電量較小之非導體表 面連續放電到有尖端形狀之導體,並將產生弱光之現象。 電晕放電是屬於規模較小之空間電荷雲對導體所產生的尖 端放電現象。火花放電則是指兩導體間放電或導體表面與 接地導體接近至一適當距離時,當導體間電場強度超過介 5 201218564 質可承受之破壞強度(breakdown strength),即會產成火花 放電,其強度由導體間距大小決定。 匕 請參考圖1A〜1D所*,本發明積層式靜電及突波保護 元件係包含有: 而成為一複層式本 限於,矽基板 '氧 複數層絕緣基材1 〇,係互相堆疊 體,絕緣基材10之材質可選用自,但不 化鋁基板、電木、玻璃纖維、紙質、雲母、陶瓷材、塑膠 材或複合材質等,在複層式本體内部係設有至少一第一反The poles are then transmitted to the ground via the external electrodes, thereby eliminating a large amount of charge and exerting electrostatic and surge protection. When the number of laminations of the first reaction electrode and the second reaction electrode is increased, the charge conduction characteristics of the element and the durability of the element are increased, and the service life of the protection element is prolonged. By adjusting the shape and spacing of the tip electrode portions of the first and second reaction electrodes, the working initial working voltage can be adjusted to obtain the required element sensitivity; when the material of the insulating substrate and the reaction electrode material are changed, the withstand voltage can be improved. And the number of tolerances. [Embodiment] The present invention designs a new protection element using the Corona discharge and Spark discharge theory. Electric discharge is also called tip discharge. The principle is that the non-conductor surface with a small charge is continuously discharged to a conductor with a pointed shape and will produce a weak light. Corona discharge is a tip discharge phenomenon caused by a small space charge cloud to a conductor. Spark discharge refers to the discharge between two conductors or when the surface of the conductor is close to the proper distance to the grounding conductor. When the electric field strength between the conductors exceeds the breaking strength of the dielectric strength, it will produce a spark discharge. The strength is determined by the size of the conductor spacing. Referring to FIGS. 1A to 1D, the laminated electrostatic and surge protection elements of the present invention comprise: a multi-layer type is limited to, the tantalum substrate 'oxygen-multilayer insulating substrate 1 〇, is a stacked body, The material of the insulating substrate 10 can be selected from the following, but not the aluminum substrate, the bakelite, the glass fiber, the paper, the mica, the ceramic material, the plastic material or the composite material, etc., and at least one first anti-inside is disposed inside the multi-layer body

應電極20及至少一第二反應電極3〇, #反應電極2〇、3〇 可位在同一水平位置上(如圖1C所示)或位在不同的水平位 置上(如圖1D所示),反應電極20、3〇的材質可以為銅 (Cu)、銀(Ag)、鈀(Pd)、鎳(Ni)、鋁(A丨)或前述各金屬之合 金材料,其中: 該第一反應電極20及第二反應電極3〇任一者或兩者 形成有一尖端電極部21、31,在圖1B中係顯示成對的第 、第一反應電極2 0、3 0係設置在同一層絕緣基材1 〇上, 籲且各自有一尖端電極部21a、31 a。如圖2A〜2D所示,各尖 端電極部21a、31a之端點形狀不限,惟各尖端電極部21a、 31a本身的失角角度0小於Ί8〇度,兩尖端電極部21a、31a 係彼此相對並維持有一間距D,在兩尖端電極部21 a、31 a 彼此之間的區域係定義為一反應區1 〇〇,即進行電暈放電或 火花放電的反應所在區域; 兩外電極40係分設於該些堆疊的絕緣基材1 〇的兩相 對邊’並分別與位於同側的第一反應電極2 〇及第二反應電 極30電性連接’外電極4〇的材質可以為銅(Cu)、銀(Ag)、 201218564 錄(Νι)、金(Au)或前述各金屬之合金材料,或前述金屬與導 電高分子混摻之複合材料。 當本發明實際應用時,在高電壓、高電流的情況下, 在第一反應電極20或第二反應電極3〇的其中一尖端電極 部21a、31a將聚集高密度的電子,在反應區1〇〇產生電暈 放電或火花放電的現象而將電荷從其中的一反應電極傳遞 至另一反應電極’再經外電極4〇傳遞至接地,發揮靜電、 突波保護作用。The electrode 20 and the at least one second reaction electrode 3〇, #反应电极2〇, 3〇 can be located at the same horizontal position (as shown in FIG. 1C) or at different horizontal positions (as shown in FIG. 1D). The material of the reaction electrode 20, 3〇 may be copper (Cu), silver (Ag), palladium (Pd), nickel (Ni), aluminum (A 丨) or an alloy material of the foregoing metals, wherein: the first reaction A tip electrode portion 21, 31 is formed in either or both of the electrode 20 and the second reaction electrode 3, and the paired first and second reaction electrodes 20, 30 are shown in FIG. 1B to be insulated in the same layer. The substrate 1 has a tip electrode portion 21a, 31a. As shown in FIGS. 2A to 2D, the shape of the end points of the respective tip electrode portions 21a, 31a is not limited, but the angle of the missing angle of each of the tip electrode portions 21a, 31a itself is less than Ί8 ,, and the two tip electrode portions 21a, 31a are connected to each other. Relatively and maintaining a distance D, a region between the two tip electrode portions 21a, 31a is defined as a reaction zone 1 〇〇, that is, a region where a reaction for performing a corona discharge or a spark discharge is performed; The material of the two opposite sides of the stacked insulating substrate 1 〇 is electrically connected to the first reaction electrode 2 〇 and the second reaction electrode 30 on the same side, and the material of the outer electrode 4 可以 may be copper ( Cu), silver (Ag), 201218564 (Νι), gold (Au) or an alloy material of the foregoing metals, or a composite material in which the foregoing metal and conductive polymer are mixed. When the present invention is practically applied, in the case of high voltage and high current, one of the tip electrode portions 21a, 31a of the first reaction electrode 20 or the second reaction electrode 3 will concentrate high-density electrons in the reaction zone 1 The phenomenon of corona discharge or spark discharge is generated, and the charge is transferred from one of the reaction electrodes to the other reaction electrode, and then transmitted to the ground through the external electrode 4, thereby exerting electrostatic and surge protection.

尖端放電的靈敏度取決於間距D的大小,因此只要調 整第一反應電極20與第二反應電極3〇彼此間的間距D距 離,便可調整本發明之起始工作電壓,下表係提供數組間The sensitivity of the tip discharge depends on the size of the pitch D, so that the initial operating voltage of the present invention can be adjusted by adjusting the distance D between the first reaction electrode 20 and the second reaction electrode 3, and the following table provides an inter-array.

尖端電極部之間距D 元件起始工作電壓 40〜5〇um 500V 55〜65um 1000V 70〜1〇〇um 1500V 150~250um 2000V 280~400um 2500V 另請參考圖3所示,在本發明第三實施例中,僅第一 反應電極20形成一尖端電極部21b,第二反應電極3〇無 任何尖部電極部,該尖端電極部21b與第二反應電極3〇係 維持有一間距D。惟在該尖端電極部21b上仍可產生電暈 放電或火花放電的現象而將電荷從第一反應電極2〇傳遞至 另第二反應電極30,再經外電極4〇傳遞至接地,同樣具有 保護功效。 201218564 請參考圖4所示,本發明之第一反應電極20及第二反 應電極30係設置在不同的絕緣基材1 0上’不排列在同— 水平面,其中第一反應電極20係延伸出兩尖端電極部 21 c,在第二反應電極30亦延伸相對應的兩尖端電極部 31c。當遇到高電壓、高電流的情況時,可從尖端電極體 21c、31c進行電暈放電或火花放電。The distance between the tip electrode portions is from the D element. The initial operating voltage is 40~5〇um 500V 55~65um 1000V 70~1〇〇um 1500V 150~250um 2000V 280~400um 2500V. Please refer to FIG. 3, in the third embodiment of the present invention. In the example, only the first reaction electrode 20 forms a tip electrode portion 21b, and the second reaction electrode 3 has no tip electrode portion, and the tip electrode portion 21b and the second reaction electrode 3 are maintained at a pitch D. However, the phenomenon of corona discharge or spark discharge can still be generated on the tip electrode portion 21b to transfer electric charge from the first reaction electrode 2 to the other second reaction electrode 30, and then to the ground via the external electrode 4, also having Protection effect. 201218564 Please refer to FIG. 4, the first reaction electrode 20 and the second reaction electrode 30 of the present invention are disposed on different insulating substrates 10, which are not arranged in the same horizontal plane, wherein the first reaction electrode 20 extends. The two tip electrode portions 21c also extend to the two tip electrode portions 31c corresponding to the second reaction electrode 30. When a high voltage, high current condition is encountered, corona discharge or spark discharge can be performed from the tip electrode bodies 21c, 31c.

本發明第一反應電極20及第二反應電極30的尖端電 極部21a、21 b、31a可形成在絕緣基材10的中心位置; 但請參考圖5所示,第一反應電極20及第二反應電極3〇 的尖端電極部21d、31d可位在相異的水平面上,且延伸至 所在絕緣基材1 〇的同側邊緣,當絕緣基材彳〇互相堆疊後, 該尖端電極部21 d、31 d的末端即位在該複層式本體的外側 表面’使反應區1 〇〇形成在該複層式本體的外侧表面上, 尖端放電即在該反應區100進行。 再請參考圖6所示,本發明之第一反應電極2〇、第二 反應電極30及反應區1〇〇可位在該複層式本體的任一表 面例如本貫施例便是形成在該複層式本體的頂面。 另請參考圖7A、7B所示,本發明可在設置有第一反應 電極20及第二反應電極3〇的絕緣基材上形成開孔” 1, 該開孔11位在兩相對尖端電極部21e、3ie之間,當各層 絕緣基材1Q相互堆疊而構成複層式本體時,該開孔” ^ 彼此對齊而在複層式本體内部形成一封閉空間該封閉空 間即作為反應區1 00。 如圖8所示,本發明亦可在各層的絕緣基材10均形, ’孔11 ®此當各層絕緣基材1G相互堆疊而構成複層式; 201218564 體時’該開孔11係彼此對齊而形成一貫穿複層式本體的貫 孔’該貫孔即作為反應區1 00。此外,部分第一反應電極 20及部分第二反應電極30係成對的位在同一水平位置,另 一部分的第一反應電極20及第二反應電極30係位在相異 的水平位置❶ ▲ 圖9所示’本發明亦可在部分的絕緣基材彳〇形成開孔 11 ’當各層絕緣基材10相互堆疊而構成複層式本體時,該 些開孔11係彼此對齊而形成一埋孔,該埋孔一端的開口係 鲁位在複層式本體一的側面,另一端則埋設在複層式本體内 部而未貫穿,其中,該埋孔即作為反應區1 〇〇。 再請參閱圖1 0所示,本發明可在各層絕緣基材彳〇的 側邊形成一缺口,當各層絕緣基材10相互堆疊而構成複層 式本體時,該些缺口係相互對齊而在該複層式本體的側面 上形成一凹槽,該凹槽係作為反應區i 〇〇,而内部的第一反 應電極20及第二反應電極,其尖端電極部21f、31f係延伸 至反應區100,在該反應區1QQ產生電暈放電。 鲁 本發明之反應d 1 QQ係進行電暈放電或火花放電的反 應所在區域,該反應區100除了可利用絕緣基材10本身構 成之外,亦可利用空間型態構成該反應區100,利用空氣、 惰性氣體、金屬氧化物半導體材質(如氧化鋅)作為絕緣媒 介,以確保絕緣基材10以電麼環境下不會改變其原始介 電特性,反應區100不會因為電子流動或電場反應,破壞 原有的電極形狀。 綜上所述,本發明積層式靜電和突波保護元件,藉由 調整反應電極的形狀,使反應電極形成有尖端電極部,並 201218564 改變内部反應電極之間的形狀及間距,可調整工作起始工 作電壓(元件靈敏度),藉由改變絕緣基材的材料、反應電極 材質及反應區的材質,可提高耐電壓程度及耐受次數》 再者’本發明使用靈活多變化的反應區以應用於不同 使用狀態,如針對不同的訊號端或電源端,可透過修改電 極與元件結構以符合各種應用規範需求。 【圖式簡單說明】 圖1A :本發明第一實施例之立體分解示意圖。 圖1B:本發明第一實施例其中一基材之平面系意圖。 圖1 C :本發明第一實施例之堆疊側視示意圖。 圖1 C :本發明第二實施例之堆疊側視示意圖。 圖2A〜2D :本發明尖端電極部之不同實施例系意圖。 圖3 :本發明第三實施例其中一基材之平面示意圖。 圖4 :本發明第四實施例之立體分解示意圖。 圖5 :本發明第五實施例之立體透視示意圖。 圖6 :本發明第六實施例之立體示意圖。 圖7A :本發明第七實施例之分解示意圖。 圖7 B :本發明第七實施例之堆疊側視示意圖。 圖8 :本發明第八實施例之堆疊側視示意圖。 圖9 :本發明第九實施例之堆疊側視示意圖。 圖1 〇 :本發明第十實施例之立體透視示意圖。 【主要元件符號說明】 10 201218564 1 〇絕緣基材 11開孔 20第一反應電極 21 a〜21f尖端電極部 30第二反應電極 31a、31c〜31f尖端電極部 40外電極 1 0 0反應區 D間距The tip electrode portions 21a, 21b, 31a of the first reaction electrode 20 and the second reaction electrode 30 of the present invention may be formed at a central position of the insulating substrate 10; however, referring to FIG. 5, the first reaction electrode 20 and the second The tip electrode portions 21d, 31d of the reaction electrode 3A may be located on different horizontal planes and extend to the same side edge of the insulating substrate 1 ,, and the tip electrode portion 21 d after the insulating substrate 彳〇 is stacked on each other The end of 31 d is located on the outer side surface of the multi-layer body to form a reaction zone 1 〇〇 on the outer surface of the multi-layer body, and the tip discharge is performed in the reaction zone 100. Referring to FIG. 6 again, the first reaction electrode 2〇, the second reaction electrode 30 and the reaction region 1〇〇 of the present invention can be located on any surface of the multi-layer body, for example, the local embodiment is formed in The top surface of the multi-layer body. 7A, 7B, the present invention can form an opening "1" on the insulating substrate provided with the first reaction electrode 20 and the second reaction electrode 3, and the opening 11 is located at the opposite tip electrode portions. Between 21e and 3ie, when the insulating substrates 1Q of the respective layers are stacked on each other to form a multi-layer body, the openings are aligned with each other to form a closed space inside the multi-layer body, and the closed space is used as the reaction zone 100. As shown in FIG. 8, the present invention can also form a uniform shape of the insulating substrate 10 of each layer, 'hole 11 ® when each layer of insulating substrate 1G is stacked on each other to form a multi-layer type; 201218564 body time 'the openings 11 are aligned with each other A through hole that penetrates the multi-layer body is formed as the reaction zone 100. In addition, part of the first reaction electrode 20 and part of the second reaction electrode 30 are in the same horizontal position, and the other part of the first reaction electrode 20 and the second reaction electrode 30 are in different horizontal positions ❶ ▲ 9 shows that the present invention can also form an opening 11 in a portion of the insulating substrate '. When the insulating substrates 10 are stacked on each other to form a multi-layer body, the openings 11 are aligned with each other to form a buried hole. The opening at one end of the buried hole is lug on the side of the multi-layer body, and the other end is buried inside the multi-layer body without penetrating, wherein the buried hole serves as the reaction zone. Referring to FIG. 10, the present invention can form a notch on the side of each layer of the insulating substrate, and when the layers of the insulating substrate 10 are stacked on each other to form a multi-layer body, the notches are aligned with each other. A groove is formed on a side surface of the multi-layer body, and the groove serves as a reaction zone i 〇〇, and the inner first reaction electrode 20 and the second reaction electrode have a tip electrode portion 21f, 31f extending to the reaction zone. 100, a corona discharge is generated in the reaction zone 1QQ. Luben's reaction d 1 QQ is the area where the reaction of corona discharge or spark discharge is performed. In addition to the structure of the insulating substrate 10 itself, the reaction zone 100 can also be configured by using the spatial pattern to utilize the reaction zone 100. Air, inert gas, metal oxide semiconductor material (such as zinc oxide) is used as an insulating medium to ensure that the insulating substrate 10 does not change its original dielectric properties under the environment, and the reaction region 100 does not react due to electron flow or electric field. , destroy the original electrode shape. In summary, the laminated electrostatic and surge protection device of the present invention can adjust the shape of the reaction electrode to form the tip electrode portion of the reaction electrode, and the shape and spacing between the internal reaction electrodes can be changed by 201218564, and the operation can be adjusted. Starting voltage (component sensitivity), by changing the material of the insulating substrate, the material of the reaction electrode and the material of the reaction zone, the voltage withstand voltage and the number of times of tolerance can be improved. Further, the present invention uses a flexible and varied reaction zone for application. In different use states, such as for different signal terminals or power terminals, the electrode and component structure can be modified to meet various application specifications. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a perspective exploded view of a first embodiment of the present invention. Figure 1B is a plan view of a substrate of a first embodiment of the present invention. Figure 1C is a side elevational view of the stack of the first embodiment of the present invention. Figure 1C is a side elevational view of the stack of the second embodiment of the present invention. 2A to 2D: Different embodiments of the tip electrode portion of the present invention are intended. Figure 3 is a plan view showing a substrate of a third embodiment of the present invention. Figure 4 is a perspective exploded view of a fourth embodiment of the present invention. Figure 5 is a perspective perspective view of a fifth embodiment of the present invention. Figure 6 is a perspective view of a sixth embodiment of the present invention. Fig. 7A is an exploded perspective view showing a seventh embodiment of the present invention. Figure 7B is a side elevational view of the stack of the seventh embodiment of the present invention. Figure 8 is a side elevational view of the stack of the eighth embodiment of the present invention. Figure 9 is a side elevational view of the stack of the ninth embodiment of the present invention. Figure 1 is a perspective perspective view of a tenth embodiment of the present invention. [Description of main component symbols] 10 201218564 1 〇Insulating substrate 11 opening 20 first reaction electrode 21 a to 21f tip electrode portion 30 second reaction electrode 31a, 31c to 31f tip electrode portion 40 outer electrode 1 0 0 reaction region D spacing

Claims (1)

201218564 七、申請專利範圍: 1.一種積層式靜電及突波保護元件,包含有: 複層絕緣基材,係相互堆疊而形成一複層式本體,於該 複層式本體内部係設有至少一第一反應電極及一第二反應 電極,其中該第一反應電極及第二反應電極係對向設置且 維持一間距,該第一反應電極及第二反應電極至少一者係 形成一尖端電極部,該尖端電極部之夹角角度係小於18〇 度; 兩外電極,係設於該複層式本體的兩相對側面而分別與 該第一反應電極及第二反應電極電性連接。 2 如申咕專利範圍第彳項所述之積層式靜電及突波保 護元件,該複層式本體内部係設有複數個第一反應電極及 複數個第二反應電極’各第一反應電極及各第二反應電極 係形成一尖端電極部,其中,該些第一反應電極及第二反 應電極之尖_端電極部係對向設置。 一 3.如申請專利範圍第2項所述之積層式靜電及突波保 羞元件在同一絕緣基材上係設有成對的第一反應電極及 第^反應電極。 4_如申請專利範圍第2項所述之積層式靜電及突波保 護元件’該複數個第一反應電極及第二反應電極係分別位 在相異水平位置。 士申明專利範圍第2項所述之積層式靜電及突波保 4 70件’部分的第—反應電極及第二反應電極係成對的位 在同一水平位置,其它部分的第一反應電極及第二反應電 極係位在相異的水平位置。 U is] 12 201218564 6. 如申請專利範圍第2項所述之積層式靜電及突波保 護元件,該第一反應電極及第二反應電極之尖端電極部係 延伸至複層式本體的同一侧面。 7. 如申請專利範圍第2項所述之積層式靜電及突波保 護元件,該複層式本體内部係形成一封閉空間,該封閉* 間係位於第一反應電極的尖端電極部與第二反應電極的央 端電極部之間;該封閉空間供作為該第一反應電極及第二 反應電極進行尖端放電之反應區。 • 8·如申請專利範圍帛2項所述之積層式靜電及突波保 護元件’該複層式本體係形成一貫穿兩相對側面之貫孔 間,該貫孔係位於第一反應電極的尖端電極部與第二反應 電極的尖端電.極部之間;該貫孔供作為該第—反應電極及 第二反應電極進行尖端放電之反應區。 9·如申請專利範圍第2項所述之積層式靜電及突波保 護元件’該複層式本體係形成僅貫穿其中—側面之埋孔, 該埋孔位於第一反應電極的尖端電極部與第二反應電極的 • 尖端電極部之間;該埋孔供作為該第—反應電極及第二反 應電極進行尖端放電之反應區。 10.如申請專利範圍第2項所述之積層式靜電及突波保 護元件’該複層式本體的其中一側面係形成—凹槽,該凹 槽供作為該第一反應電極及第二反應電極進行尖端放電之 反應區。 八、圖式:(如次頁) [SI 13201218564 VII. Patent application scope: 1. A laminated electrostatic and surge protection component, comprising: a multi-layer insulating substrate stacked on each other to form a multi-layer body, at least in the multi-layer body a first reaction electrode and a second reaction electrode, wherein the first reaction electrode and the second reaction electrode are disposed opposite to each other and maintain a spacing, and at least one of the first reaction electrode and the second reaction electrode forms a tip electrode The angle between the tip electrode portions is less than 18 degrees. The two outer electrodes are electrically connected to the first reaction electrode and the second reaction electrode respectively on opposite sides of the multi-layer body. [2] The laminated electrostatic and surge protection component according to the above-mentioned claim, wherein the multi-layer body is provided with a plurality of first reaction electrodes and a plurality of second reaction electrodes each of the first reaction electrodes and Each of the second reaction electrodes forms a tip electrode portion, and the tip electrode portions of the first reaction electrode and the second reaction electrode are opposed to each other. A laminated static electricity and surge snubber element as described in claim 2, wherein the pair of first reaction electrodes and the first reaction electrode are provided on the same insulating substrate. 4_ The laminated electrostatic and surge protection element as described in claim 2, wherein the plurality of first reaction electrodes and the second reaction electrode are located at different horizontal positions. In the second paragraph of the patent scope, the layered electrostatic and surge protection 4 70 parts of the 'the first reaction electrode and the second reaction electrode are in the same horizontal position, the other part of the first reaction electrode and The second reaction electrode is in a different horizontal position. Uis] 12 201218564 6. The laminated electrostatic and surge protection element according to claim 2, wherein the tip electrode portions of the first reaction electrode and the second reaction electrode extend to the same side of the multi-layer body . 7. The laminated electrostatic and surge protection component according to claim 2, wherein the multi-layer body forms a closed space, and the closed* is located at the tip electrode portion of the first reaction electrode and the second Between the central end electrode portions of the reaction electrode; the closed space is used as a reaction zone for the tip discharge of the first reaction electrode and the second reaction electrode. • 8. The laminated electrostatic and surge protection element as described in claim 2, the multi-layer system forms a through-hole between two opposite sides, the through-hole being located at the tip of the first reaction electrode The electrode portion and the tip end of the second reaction electrode are electrically connected to each other; and the through hole is provided as a reaction region for performing tip discharge as the first reaction electrode and the second reaction electrode. 9. The laminated electrostatic and surge protection element according to claim 2, wherein the multi-layered system forms a buried hole only through the side surface thereof, the buried hole being located at the tip electrode portion of the first reaction electrode Between the tip electrode portions of the second reaction electrode; the buried hole serves as a reaction region for the tip discharge of the first reaction electrode and the second reaction electrode. 10. The laminated electrostatic and surge protection element of claim 2, wherein one side of the multi-layer body is formed as a groove, the groove serving as the first reaction electrode and the second reaction The electrode undergoes a reaction zone for tip discharge. Eight, schema: (such as the next page) [SI 13
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* Cited by examiner, † Cited by third party
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CN106549011A (en) * 2015-09-22 2017-03-29 瑞昱半导体股份有限公司 Electric static discharge protector
US10192817B2 (en) 2015-09-14 2019-01-29 Realtek Semiconductor Corp. Electrostatic discharge protection element
TWI685003B (en) * 2018-07-25 2020-02-11 勝德國際研發股份有限公司 Varistor Module

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* Cited by examiner, † Cited by third party
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CN110739673B (en) * 2018-07-20 2021-12-14 硕天科技股份有限公司 Surge protection device
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Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2081166U (en) * 1990-12-24 1991-07-17 华南理工大学 Full-automatic protector for electronic transformer of neon lamp
JP2002093546A (en) * 2000-07-10 2002-03-29 Samsung Electro Mech Co Ltd Surface mount electrostatic discharge device
KR100624731B1 (en) * 2005-04-11 2006-09-20 엘지전자 주식회사 Surface discharge type air cleaning device
CN101304140B (en) * 2007-05-10 2012-10-10 大原武芳 Power supply inserted terminal with wave-projecting protection function
CN101304159A (en) * 2007-05-10 2008-11-12 大原武芳 Sudden wave protector
EP2061123B1 (en) * 2007-05-28 2014-12-03 Murata Manufacturing Co. Ltd. Esd protection device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9172021B2 (en) 2012-05-28 2015-10-27 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US10192817B2 (en) 2015-09-14 2019-01-29 Realtek Semiconductor Corp. Electrostatic discharge protection element
CN106549011A (en) * 2015-09-22 2017-03-29 瑞昱半导体股份有限公司 Electric static discharge protector
CN106549011B (en) * 2015-09-22 2019-10-18 瑞昱半导体股份有限公司 Electric static discharge protector
TWI685003B (en) * 2018-07-25 2020-02-11 勝德國際研發股份有限公司 Varistor Module

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