KR980011539A - Composite dielectric composition for ultra high frequency - Google Patents
Composite dielectric composition for ultra high frequency Download PDFInfo
- Publication number
- KR980011539A KR980011539A KR1019960026753A KR19960026753A KR980011539A KR 980011539 A KR980011539 A KR 980011539A KR 1019960026753 A KR1019960026753 A KR 1019960026753A KR 19960026753 A KR19960026753 A KR 19960026753A KR 980011539 A KR980011539 A KR 980011539A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide
- composition
- present
- high frequency
- composite dielectric
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract description 17
- 239000002131 composite material Substances 0.000 title abstract description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001954 samarium oxide Inorganic materials 0.000 claims abstract description 7
- 229940075630 samarium oxide Drugs 0.000 claims abstract description 7
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims abstract description 7
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims abstract description 6
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000292 calcium oxide Substances 0.000 claims abstract description 6
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001947 lithium oxide Inorganic materials 0.000 claims abstract description 5
- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004891 communication Methods 0.000 abstract description 14
- 229910010413 TiO 2 Inorganic materials 0.000 abstract description 6
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- BEANMFHTIHKNIY-UHFFFAOYSA-N [Pb]=O.[O-2].[Ba+2] Chemical compound [Pb]=O.[O-2].[Ba+2] BEANMFHTIHKNIY-UHFFFAOYSA-N 0.000 abstract description 2
- LQDODGWHTCOXLG-UHFFFAOYSA-L oxygen(2-) titanium(4+) diiodide Chemical compound [I-].[I-].[O-2].[Ti+4] LQDODGWHTCOXLG-UHFFFAOYSA-L 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 5
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
- 239000011162 core material Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- XNFDWBSCUUZWCI-UHFFFAOYSA-N [Zr].[Sn] Chemical compound [Zr].[Sn] XNFDWBSCUUZWCI-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- IJBYNGRZBZDSDK-UHFFFAOYSA-N barium magnesium Chemical compound [Mg].[Ba] IJBYNGRZBZDSDK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- ZFXVRMSLJDYJCH-UHFFFAOYSA-N calcium magnesium Chemical compound [Mg].[Ca] ZFXVRMSLJDYJCH-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
본 발명은 xLiO1/2(산화리튬)-yCaO(산화칼슘)-zSmO3/2(산화사마륨)-wTiO2(산화티탄)-qBO3/2(산화보론)(단, 전체 조성물에 대한 몰%로 7.07x7.85, 13.20y14.66, 20.27z22.52, 47.14w52.35 및 0<q12.32)으로 조성된 초고주파용 복합 유전체 조성물에 관한 것으로서, 초고주파 대역에서 높은 품질계수와 높은 유전율을 가지는 동시에 공진주파수의 온도계수가 안정되어 있기 때문에 각종 고출력용 무선 통신 부품에 이용되어 주파수 선택성, 부품의 소형화 및 회로의 온도 안정성 등을 향상시킬 수 있는 효과가 있다. 또한, 본 발명은 소결온도가 종래의 조성물 즉, BaO-PbO(산화바륨-산화납) 또는 Nd2O3-TiO2(산화디오듐-산화티탄)보다 낮기 때문에 각종 고출력용 무선 통신 부품의 제조 단가를 낮출 수 있는 효과가 있다.The present invention relates to a method for producing a metal oxide composite oxide having a composition of xLiO 1/2 (lithium oxide) -yCaO (calcium oxide) -zSmO 3/2 (samarium oxide) -wTiO 2 (titanium oxide) -qBO 3/2 7.07% x 7.85, 13.20 y 14.66, 20.27 z 22.52, 47.14 w52.35 and 0 < q 12.32), which has a high quality factor and a high dielectric constant in a very high frequency band and a stable temperature coefficient of a resonance frequency. Therefore, the composite dielectric composition is used for various high power radio communication components, And the temperature stability of the circuit can be improved. Further, since the sintering temperature of the present invention is lower than that of a conventional composition, that is, BaO-PbO (barium oxide-lead oxide) or Nd 2 O 3 -TiO 2 (diiodide-titanium oxide) The cost can be lowered.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
본 발명은 유전체 조성물에 관한 것으로서, 특히 각종 고출력용 무선 통신 부품의 핵심 재료로 사용되는 초고주파용 복합 유전체 조성물에 관한 것이다. 최근 들어 이동 통신, 인공 위성 통신과 같은 무선 통신의 발달과 더불어 통신의 수요가 증가하고, 디지털 통신의 확대 등으로 초고주파(microwave)의 이용률도 증가하고 있는 추세이다. 상기와 같은 초고주파 무선 통신을 가능하게 하는 핵심 부품으로는 듀플렉서(duplexer), 협대역 필터(band pass filter), 전압 제어 발진기, GPS(Global Positioning System)용 평판 안테나, 인터스테이지(interstage)용 LC-칩 필터 등이 있고, 각 부품은 저손실 유전체 일명 ‘초고주파용 유전체’를 주재료로 하여 제조된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric composition, and more particularly, to a composite dielectric composition for an ultra-high frequency wave which is used as a core material for various high power radio communication components. In recent years, with the development of wireless communication such as mobile communication and satellite communication, the demand for communication has increased, and the utilization rate of microwave is also increasing due to expansion of digital communication. As a core part enabling the above-described microwave radio communication, a duplexer, a band pass filter, a voltage controlled oscillator, a flat antenna for a GPS (Global Positioning System), an LC- Chip filters, and each component is manufactured using a low-loss dielectric, a so-called 'high-frequency dielectric,' as its main material.
상기 초고주파용 유전체는 1960년대에 처음으로 TiO2(산화티탄)를 이용하여 조성된 이후 현재까지 여러가지 조성이 개발되어 있는 상태이다. 즉, 고출력용 무선통신 부품에 주로 이용되는 BaO(산화바륨)계, pbO(산화납)계, Nd2O3(산화디오듐) 또는 Sm2O3(산화사마륨)계, TiO2(산화티탄)계와, 적출력용 디지털 통신 부품에 주로 이용되는 Mg(Ca)TiO3(칼슘마그네슘티타네이트)계, (ZrSn)TiO4(지르코늄틴티타네이트)계와 인공위성용 통신 부품에 주로 이용되는 초저손실 유전체인 Ba(MgTa)O3(바륨마그네슘탄탈레이트)계가 이미 개발되어 있는 대표적인 초고주파용 유전체이다.Since the dielectric material for high-frequency use was first formed using TiO 2 (titanium oxide) in the 1960's, various compositions have been developed to date. In other words, BaO (barium oxide) is generally used in a wireless communication part for high-power systems, pbO (lead oxide) based, Nd 2 O 3 (oxidation video rhodium) or Sm 2 O 3 (samarium oxide) type, TiO 2 (titanium oxide ) system and, a printing digital Mg (Ca) which is mainly used in the communication part TiO 3 (calcium magnesium titanate) type, (ZrSn) TiO 4 (zirconium tin titanate) systems and satellite seconds are generally used to for communication components loss A dielectric material, Ba (MgTa) O 3 (barium magnesium tantalate), is a typical high-frequency dielectric material already developed.
또한, 상기 초고자파용 유전체는 각종 고출력용 무선 통신 부품에 이용될 수 있도록 다음과 같은 유전 특성을 충족시키고 있다. 첫째, 높은 주파수 선택성을 위하여 높은 품질계수(1㎓에서 3000이상)를 가져야 하고, 둘째, 부품의 소형화를 위하여 높은 유전율(r>20)을 가져야 하며, 셋째 회로의 온도 안정성을 위하여 공진주파수의 온도계수가 0을 기준으로 조절이 가능해야 한다.In addition, the dielectric material for ultra low frequency has the following dielectric properties so that it can be used for various high power radio communication components. First, for high frequency selectivity, it should have a high quality factor (more than 3000 at 1 GHz), and second, it should have a high dielectric constant r> 20). For the temperature stability of the third circuit, the temperature coefficient of the resonant frequency should be adjustable based on zero.
본 발명도 상기와 같이 높은 품질계수와 높은 유전율을 가지는 동시에 공진주파수의 온도계수의 안정되어 있어 고출력용 무선 통신 부품의 핵심 재료로 사용될 수 있는 초고주파용 복합 유전체 조성물을 제공함에 그 목적이 있다.The object of the present invention is to provide a composite dielectric composition for a microwave having a high quality factor and a high dielectric constant as described above, and a stable temperature coefficient of a resonance frequency, which can be used as a core material of a high-output wireless communication component.
상기와 같은 목적을 달성하기 위하여 본 발명에 의한 초고주파용 복합 유전체조성물은 xLiO1/2(산화리튬)-yCaO(산화칼슘)-zSmO3/2(산화사마륨)-wTiO2(산화티탄)-qBO3/2(산화보론)(단, 전체 조성물에 대한 몰%로 7.07x7.85, 13.20y14.66, 20.27z22.52, 47.14w52.35 및 0<q12.32)으로 조성된 것을 특징으로 한다.In order to achieve the above object, the present invention provides a composite dielectric composition for ultra-high frequency, comprising: xLiO 1/2 (lithium oxide) -yCaO (calcium oxide) -zSmO 3/2 (samarium oxide) -wTiO 2 3/2 (oxidation boron) (provided that the molar ratio of 7.07 x 7.85, 13.20 y 14.66, 20.27 z 22.52, 47.14 w52.35 and 0 < q 12.32).
이하, 본 발명에 의한 초고주파용 복합 유전체 조성물을 보다 상세하게 설명하면 다음과 같다. 본 발명에 의한 초고주파용 복합 유전체 조성물을 보다 상세하게 설명하면 다음과 같다. 본 발명에 의한 초고주파용 복합 유전체조성물은 xLiO1/2(산화리튬)-yCaO(산화칼슘)-zSmO3/2(산화사마륨)-wTiO2(산화티탄)-qBO3/2(산화보륨)(단, 전체 조성물에 대한 몰%로 7.07x7.85, 13.20y14.66, 20.27z22.52, 47.14w52.35 및 0<q12.32)으로 조성된다. 본 발명의 이해가 용이하도록 본 발명의 제 1∼9 실시예를 아래 도표를 참조하여 설명한다.Hereinafter, the composite dielectric composition for an ultra high frequency wave according to the present invention will be described in more detail as follows. The composite dielectric composition for an ultra high frequency according to the present invention will be described in more detail as follows. The composite dielectric composition for an ultra high frequency wave according to the present invention is characterized in that xLiO 1/2 (lithium oxide) -yCaO (calcium oxide) -zSmO 3/2 (samarium oxide) -wTiO 2 (titanium oxide) -qBO 3/2 However, in terms of mol% based on the total composition, 7.07 x 7.85, 13.20 y 14.66, 20.27 z 22.52, 47.14 w52.35 and 0 < q 12.32). Embodiments 1 to 9 of the present invention will be described with reference to the following charts to facilitate understanding of the present invention.
제 1 실시예First Embodiment
본 발명의 제 1 실시예는 7.58몰%의 LiO1/2(산화리튬)과, 14.66몰%의 CaO(산화칼슘)과, 22.52몰%의 SmO3/2(산화사마륨)과, 52.35몰%의 TiO2(산화티탄)과, 2.62몰%의 BO3/2(산화보론)으로 조성된다. 상기 제 1 실시예의 유전 특성을 측정하기 위하여 다음과 같은 과정을 거쳐 시편을 제조한다. 먼저 상기에 기재된 조성에 따라 99.9% 이상의 CaCO3(탄화리튬), Sm2O3(산화사마륨), TiO2(산화티탄), BO3/2(산화보론) 분말을 평량한 후 ZrO2(산화지르코늄)볼과 알콜을 매개체로 하여 24시간 동안 분쇄 및 혼합을 수행한다. 그 후, 혼합된 분말을 24시간 동안 건조시키고, 건조된 분말을 Al2O3(산화알루미늄) 도가니에 넣어 900∼1100℃의 온도에서 2∼4시간 동안 하소하고, 하소된 분말을 다시 ZrO2(산화지르코늄)볼과 알콜을 매개로 하여 2차 분쇄한 후 24시간 동안 건조시키고, 건조된 분말을 200 메시(mesh)채로 거른다. 그 후, 200 메시채로 거른 분말 10g과 PVA(Polyvinyl Alcohol) 5% 수용액 0.2cc를 잘 교반하여 10분 동안 건조시킬 후 40kgf/㎠의 압력으로 냉간 성형하고, 냉간 성형된 성형체를 1250∼1300℃의 온도에서 3∼6시간 동안 소결하여 시편을 제조한다. 그 후, 초고주파 대역(300㎒∼30㎓)에서 TE(Transverse Electricfield)모드를 이용한 유전 특성을 측정하기 위하여 제조 완료된 직경 9.8∼10mm의 시편을 직경:높이=1:0.45가 되도록 연마한 후 시편의 표면 거칠기에 의한 품질계수의 저하를 최소화하기 위하여 다시 시편을 연마하여 거울면 표면을 만든다. 그 후, 평행 평판법을 이용하여 제조 완료된 시편의 유전 특성을 측정하는데, 특히 공진주파수의 온도계수는 20∼80℃ 범위에서 측정한다. 그 측정 결과 본 발명의 제 1 실시예는 1㎓에서 92.8의 높은 비유전율(K)과 6917의 높은 품질계수(Q≒tan-1..)를 가지는 동시에 5.0PPM/℃의 공진주파수 온도계수(TCF)를 가지므로 PHS(Personal Handphone System)용 협대역 필터, CT(Cordless Telephone)-2용 협대역 필터, CT-1+용 협대역 필터, 아날로그 C/P(Cellular/Phone) 듀플렉서, 디지털 C/P 듀플렉서 등과 같은 고출력용 무선 통신 부품의 핵심 재료로 사용될 수 있다.A first embodiment of the present invention is a lithium secondary battery comprising 7.58 mol% LiO 1/2 (lithium oxide), 14.66 mol% CaO (calcium oxide), 22.52 mol% SmO 3/2 (samarium oxide), 52.35 mol% Of TiO 2 (titanium oxide), and 2.62 mol% of BO 3/2 (boron oxide). In order to measure the dielectric characteristics of the first embodiment, a specimen is manufactured through the following procedure. First, a powder of CaCO 3 (lithium carbonate), Sm 2 O 3 (samarium oxide), TiO 2 (titanium oxide), and BO 3/2 (boron oxide) was weighed in an amount of 99.9% or more according to the composition described above and then ZrO 2 Zirconium) balls and alcohol as a medium for 24 hours. Thereafter, the mixed powder was dried for 24 hours, and the dried powder was placed in a crucible made of Al 2 O 3 (aluminum oxide), calcined at a temperature of 900 to 1100 ° C for 2 to 4 hours, and the calcined powder was again mixed with ZrO 2 (Zirconium oxide) Secondary pulverization through a ball and alcohol, followed by drying for 24 hours, and the dried powder is filtered with 200 mesh. Thereafter, 10 g of the powder which was passed through 200 meshes and 0.2 cc of a 5% aqueous solution of PVA (Polyvinyl Alcohol) were well stirred and dried for 10 minutes, followed by cold molding at a pressure of 40 kgf / Samples are prepared by sintering at the temperature for 3 to 6 hours. Then, in order to measure the dielectric characteristics using a TE (Transverse Electricfield) mode in a very high frequency band (300 MHz to 30 GHz), the manufactured specimen having a diameter of 9.8 to 10 mm was polished to have a diameter of 1: 0.45, In order to minimize the degradation of the quality factor due to the surface roughness, the specimen is polished again to make the mirror surface. Then, the dielectric properties of the manufactured specimen are measured using the parallel plate method. Particularly, the temperature coefficient of the resonance frequency is measured in the range of 20 to 80 ° C. As a result of the measurement, the first embodiment of the present invention has a high relative dielectric constant (K) of 92.8 at 1 GHz and a high quality factor (Q? Tan -1 ..) of 6917 and a resonant frequency temperature coefficient of 5.0PPM / TCF), a narrow band filter for PHS (Personal Handphone System), a narrow band filter for CT (Cordless Telephone) -2, a narrow band filter for CT-1 +, an analog C / P (duplexer) / P duplexer, and the like.
제2∼9 실시예Examples 2 to 9
본 발명의 제 2∼9 실시예도 상기에서 설명된 본 발명의 제 1 실시예와 마찬가지로 아래 도표에 기재된 각각의 조성에 따라 시편을 제조하여 유전 특성을 측정해 보면 아래 도표에 나타난 바와 같이 각각의 실시예가 모두 1㎓에서 20 이상의 높은 비율전율(K)과 3000 이상의 높은 품질계수(Q≒tan- )를 가지는 동시에 공진 주파수 온도계수(TCF)가 0에 가까운 수치를 가지므로 각종 고출력용 무선 통신 부품의 핵심 재료로 사용할 수 있다.As in the case of the first embodiment of the present invention described in the second to ninth embodiments of the present invention, when the dielectric constant is measured according to the respective compositions shown in the following table, Examples are both high rate of charge (K) of 20 or more at 1 GHz and high quality factor (Q ≒ tan - ) And the resonant frequency temperature coefficient (TCF) is close to zero, it can be used as a core material for various high power radio communication components.
[표][table]
이와 같이 본 발명에 의한 초고주파용 복합 유전체 조성물은 초고주파 대역에서 높은 품질계수와 높은 유전율을 가지는 동시에 공진주파수의 온도계수가 안정되어 있기 때문에 각종 고출력용 무선 통신 부품에 이용되어 주파수 선택성, 부품의 소형화 및 회로의 온도 안정성 등을 향상시킬 수 있는 효과가 있다. 또한 본 발명은 소결온도가 종래의 조성물 즉, BaO-PbO(산화바륨-산화납) 또는 Nd2O3-TiO2(산화디오듐-산화티탄)보다 낮기 때문에 각종 고출력용 무선 통신 부품의 제조 단가를 낮출 수 있는 효과가 있다.As described above, since the composite dielectric composition for high-frequency use according to the present invention has a high quality factor and a high dielectric constant in a very high frequency band and a stable temperature coefficient of a resonance frequency, it is used in various high power wireless communication components, It is possible to improve the temperature stability and the like. Further, since the sintering temperature of the present invention is lower than that of a conventional composition, that is, BaO-PbO (barium oxide-lead oxide) or Nd 2 O 3 -TiO 2 (diiodide-titanium oxide) Can be lowered.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026753A KR100209237B1 (en) | 1996-07-02 | 1996-07-02 | Dielectric composing material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026753A KR100209237B1 (en) | 1996-07-02 | 1996-07-02 | Dielectric composing material |
Publications (2)
Publication Number | Publication Date |
---|---|
KR980011539A true KR980011539A (en) | 1998-04-30 |
KR100209237B1 KR100209237B1 (en) | 1999-07-15 |
Family
ID=19465351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960026753A KR100209237B1 (en) | 1996-07-02 | 1996-07-02 | Dielectric composing material |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100209237B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100444222B1 (en) * | 2001-11-13 | 2004-08-16 | 삼성전기주식회사 | Dielectric Ceramic Compositions |
-
1996
- 1996-07-02 KR KR1019960026753A patent/KR100209237B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100444222B1 (en) * | 2001-11-13 | 2004-08-16 | 삼성전기주식회사 | Dielectric Ceramic Compositions |
Also Published As
Publication number | Publication date |
---|---|
KR100209237B1 (en) | 1999-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2000290068A (en) | Dielectric ceramic composition for high frequency wave, dielectric resonator, dielectric filter, dielectric duplexer and communication device | |
FI113905B (en) | Dielectric ceramic composition and dielectric resonator | |
JP4609744B2 (en) | Dielectric porcelain composition for microwave | |
KR980011539A (en) | Composite dielectric composition for ultra high frequency | |
KR0164290B1 (en) | Dielectric ceramic composition for high frequency | |
JP2736439B2 (en) | Dielectric porcelain composition | |
KR980011540A (en) | Ultra-high frequency dielectric composition for low temperature sintering | |
KR0173185B1 (en) | Dielectric ceramic composition for high frequency | |
JP3785235B2 (en) | Microwave dielectric ceramic composition | |
KR100234017B1 (en) | Dielectric ceramic composition | |
JPH1017368A (en) | Low-loss dielectric material for high-frequency wave | |
KR100234018B1 (en) | Dielectric ceramic compositions | |
KR100264453B1 (en) | Dielectric ceramic composition | |
JP2899909B2 (en) | Microwave dielectric porcelain composition | |
KR100415983B1 (en) | Dielectric Ceramic Compositions for High Frequency Applications | |
JP3957623B2 (en) | High frequency dielectric ceramic composition with high quality factor | |
KR100234019B1 (en) | Dielectric ceramic compositions | |
JPH10188675A (en) | Microwave dielectric porcelain composition | |
KR100308915B1 (en) | High Frequency Dielectric Magnetic Composition | |
KR960006235B1 (en) | Composition of electric ceramics | |
KR100362881B1 (en) | Dielectric composition and the manufacturing method | |
KR19980014910A (en) | Dielectric material for CaTiO3-La (Zn1 / 2Ti1 / 2) O3-LaA103 microwave | |
JPH09227225A (en) | Dielectric porcelain composition | |
KR100234020B1 (en) | Dielectric ceramic compositions | |
KR100332931B1 (en) | Composition of Microwave Dielectrics |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |