KR980010534A - Liquid crystal alignment electrode structure and manufacturing method thereof - Google Patents
Liquid crystal alignment electrode structure and manufacturing method thereof Download PDFInfo
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- KR980010534A KR980010534A KR1019960032052A KR19960032052A KR980010534A KR 980010534 A KR980010534 A KR 980010534A KR 1019960032052 A KR1019960032052 A KR 1019960032052A KR 19960032052 A KR19960032052 A KR 19960032052A KR 980010534 A KR980010534 A KR 980010534A
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133796—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers having conducting property
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Abstract
본 발명은 액정배향 전극구조체 및 그 제조방법에 관한 것으로서, 기판, 기판 상부에 순차적으로 ZnO박막, 전극용 제1 ITO박막 및 절연용 제2 ITO박막이 형성된 구조를 갖는다. 기판 위에 형성된 ZnO박막의 〈001〉방향 결정성장특성에 의해 제1ITO 박막 및 제2ITO박막의 표면조직의 서브그레인이 기판에 대해 45도의 각도로 일정하게 경사진 구조를 갖기 때문에, 이 서브그레인의 일정한 방향성에 의해 제2 ITO박막 상면에 위치되는 액정분자를 일정방향으로 배열시킬 수 있게 된다. 따라서, 성장방향이 균일하게 제어된 전극구조체에 의해 액정분자를 일정방향으로 배열시킬 수 있기 때문에 LCD제조시의 배향막 표면을 처리하는 마찰공정이 생략됨으로써, 마찰공정에서 야기된 이물질 등의 혼입을 피할 수 있다.The present invention relates to a liquid crystal alignment electrode structure and a method of manufacturing the same, and has a structure in which a ZnO thin film, a first ITO thin film for electrode and a second ITO thin film for insulation are sequentially formed on a substrate and a substrate. Since the sub-grains of the surface texture of the first ITO thin film and the second ITO thin film are uniformly inclined at an angle of 45 degrees with respect to the substrate due to the <001> direction crystal growth characteristics of the ZnO thin film formed on the substrate, The liquid crystal molecules positioned on the upper surface of the second ITO thin film can be arranged in a certain direction by the directionality. Therefore, since the liquid crystal molecules can be aligned in a certain direction by the electrode structure having the uniformly controlled growth direction, the friction process for treating the surface of the alignment film at the time of manufacturing an LCD is omitted, thereby avoiding the inclusion of foreign matters caused in the friction process .
Description
본 발명은 LCD에 사용되는 액정배향 전극구조체 및 그 제조방법에 관한 것으로서, 특히 박막의 결정성장방향이 일정방향으로 제어되어 액정이 배향되는 액정배향 전극구조체 및 그 제조방법에 관한 것이다.The present invention relates to a liquid crystal alignment electrode structure used in an LCD and a method of manufacturing the same. More particularly, the present invention relates to a liquid crystal alignment electrode structure in which a crystal growth direction of a thin film is controlled in a predetermined direction to orient a liquid crystal, and a manufacturing method thereof.
일반적으로 액정표시소자(LCD)의 액정을 배향시키기 위해서 기판 내벽에 배향막을 형성한다. 이와 같은 배향막은 액정분자가 동일한 분자배열을 갖도록 처리되는데, 가장보편화 되어 있는 배향막 처리방법으로서 천 등을 고분자 물질로 조성된 배향막 표면에 마찰시키는 마찰법과, 배향막 성장시 결정성장방향을 제어하여 배향막을 형성하는 방법이 있다.Generally, an alignment film is formed on the inner wall of the substrate to align the liquid crystal of the liquid crystal display (LCD). Such an orientation film is processed so that the liquid crystal molecules have the same molecular arrangement. The most commonly used method for treating an orientation film is a friction method in which cloth or the like is rubbed against the surface of an alignment film composed of a polymer material and a method in which a crystal growth direction is controlled during orientation film growth There is a method of forming.
고분자 물질로 조성된 배향막의 표면을 천등으로 마찰시키는 마찰법은 마찰시키는 과정에서 상호 접촉에 의해 천으로부터 유출된 이물질의 혼입으로 인해 광투과 특성을 저해하고, 전기적인 단락의 원인을 제공하는 문제점이 있다.The friction method of rubbing the surface of the alignment layer made of a polymer material with the top of the lens hinders the light transmission property due to the contamination of the foreign matter discharged from the cloth due to mutual contact during the rubbing process, have.
배향막 성장시 결정성장방향을 제어하는 방법으로서 증착면에 광을 조사하여 성장되는 배향막의 결정방향성을 조절하는 광배향방법이 검토되고 있으나, 배향막에 적용되는 재료의 열적 불안전성과 유색성에 의한 광이용효율의 저하 등의 문제점을 안고 있다.As a method of controlling the crystal growth direction during the orientation film growth, a photo alignment method for controlling the crystal orientation of the grown orientation film by irradiating light to the deposition face has been studied. However, the thermal instability of the material applied to the orientation film and the light utilization efficiency And the like.
또한, 경사증착법에 의한 규소산화물 배향막은 기판에 대해 경사로 증착하는 증착각도, 증착속도 등에 따라 액정분자의 배향특성이 다르게 나타나는데 현재까지의 제조기술로는 증착면에서 원하는 결정성장방향으로 성장되는 면적이 대단히 협소하게 부분적으로 형성되기 때문에 상업용 디스플레이소자에 적용하기가 어렵고, 부분적 배향특성을 파악하기 위해 실험실적으로만 이용되고 있다. 특히 규소산화물박막이 결정성장되는 모체인 기판의 표면 거칠기는 증착각도에 직접적으로 영향을 미치게 되는데, 기판 표면의 고유한 굴곡 등이 박막의 균일적인 경사증착을 방해함으로써, 균일한 성장을 보장하지 못하는 단점이 있다.In addition, the orientation characteristics of the liquid crystal molecules are different depending on the deposition angle, deposition rate, and the like, which are obliquely deposited on the substrate by the oblique deposition method. However, the area of the silicon oxide orientation film grown in the direction of the desired crystal growth It is difficult to apply it to a commercial display device because it is formed very narrowly and partially, and it is used only as an experimental result in order to grasp partial orientation characteristics. In particular, the surface roughness of the substrate, which is the matrix on which the silicon oxide thin film is grown, directly affects the deposition angle. Since the inherent bending of the substrate surface hinders the uniform inclined deposition of the thin film, There are disadvantages.
본 발명은 상기와 같은 문제점을 해결하기 위해 창안된 것으로서, 이물질이 혼입되지 않고, 대면적에 걸쳐 액정을 일정하게 배향시키도록 일정한 방향으로 결정성장된 액정배향 전극구조체 및 그 제조방법을 제공하는데 그 목적이 있다.Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a liquid crystal alignment electrode structure that is crystal- There is a purpose.
제1도는 본 발명에 따른 액정배향 전극구조체의 개략적인 수직단면도.FIG. 1 is a schematic vertical sectional view of a liquid crystal alignment electrode structure according to the present invention. FIG.
제2a도 내지 제2c도는 발명에 따른 액정배향 전극구조체의 제조방법에 대한 공정도이다.FIGS. 2A to 2C are process diagrams for a method of manufacturing a liquid crystal alignment electrode structure according to the present invention.
* 도면의 주요부호에 대한 부호의 설명DESCRIPTION OF REFERENCE NUMERALS REFERENCE NUMERALS
1 : 기판 2 : ZnO박막1: substrate 2: ZnO thin film
3 : 제1 ITO박막 4 : 제2 ITO박막3: first ITO thin film 4: second ITO thin film
상기 목적을 달성하기 위하여 본 발명에 따른 액정배향 전극구조체는, 기판; 상기 기판 상면에 형성된 ZnO박막층; 및 상기 ZnO박막층 상면에 형성된 ITO박막층;을 포함하는 것을 그 특징으로 한다.According to an aspect of the present invention, there is provided a liquid crystal alignment electrode structure comprising: a substrate; A ZnO thin film layer formed on the upper surface of the substrate; And an ITO thin film layer formed on the upper surface of the ZnO thin film layer.
상기 ITO박막은 상기 ZnO박막상면에 형성되어 투명전극으로 이용되는 제1ITO박막 및 상기 제1ITO박막 상면에 절연층인 제2ITO박막으로 형성되는게 바람직하다.The ITO thin film is preferably formed of a first ITO thin film formed on the ZnO thin film and used as a transparent electrode and a second ITO thin film serving as an insulating layer on the top surface of the first ITO thin film.
상기의 목적을 달성하기 위하여 본 발명에 따른 액정배향 전극구조체의 제조방법은 기판 상면에 ZnO박막을 형성시키는 단계; 상기 ZnO박막 위에 전극용 제1ITO박막을 형성시키는 단계; 상기 제1 ITO박막 위에 절연용 제2ITO박막을 형성시키는 단계;를 포함하는 것을 그 특징으로 한다.According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal alignment electrode structure, including: forming a ZnO thin film on a substrate; Forming a first ITO thin film for the electrode on the ZnO thin film; And forming a second ITO thin film for insulation on the first ITO thin film.
이하 첨부된 도면을 참조하여 본 발명에 따른 액정배향 전극구조체를 상세히 설명한다.Hereinafter, a liquid crystal alignment electrode structure according to the present invention will be described in detail with reference to the accompanying drawings.
제1도는 본 발명에 따른 액정배향 전극구조체의 개략적인 수직단면도이다.FIG. 1 is a schematic vertical sectional view of a liquid crystal alignment electrode structure according to the present invention.
도시된 바와 같이, 본 발명의 액정배향 전극구조체는 기판(1), 기판상면에 순차적으로 ZnO박막(2), 투명전극으로 이용되는 제1 ITO박막(3a), 절연용 제2 ITO박막(3b)이 형성된 적층구조를 포함한다. 실질적으로 액정층은 제2 ITO(3b)박막위에 위치된다.As shown in the figure, the liquid crystal alignment electrode structure of the present invention comprises a substrate 1, a ZnO thin film 2 sequentially on the substrate surface, a first ITO thin film 3a used as a transparent electrode, a second ITO thin film 3b ) Are formed. Substantially the liquid crystal layer is placed on the second ITO (3b) thin film.
액정표시소자의 구성요소인 본 발명의 액정배향 전극구조체는 ITO박막(3)이균일한 결정구조를 갖음으 로써, 액정분자를 일정방향으로 배열시킨다. 제1 ITO박막층(3a)과 제2 ITO박막(3b))층은 산소조성비에 따라 전기적인 특성 즉, 통전 및 절연특성만 달리할 뿐 결정구조는 동일하고, 적층면 전체에 걸쳐 동일한 결정구조를 갖는다. 이와 같이 제1 ITO박막층(3a)과 제2 ITO박막(3b)층의 동일하고 균일한 결정구조는 ZnO박막(2)위에 결정성장시킴으로써 얻어진다.The liquid crystal alignment electrode structure of the present invention, which is a component of the liquid crystal display element, has a uniform crystal structure of the ITO thin film 3, thereby arranging the liquid crystal molecules in a predetermined direction. The first ITO thin film layer 3a and the second ITO thin film 3b layer have the same crystal structure but different electric characteristics such as electric conduction and insulation characteristics according to the oxygen composition ratio and have the same crystal structure throughout the lamination plane . The same and uniform crystal structure of the first ITO thin film layer 3a and the second ITO thin film 3b layer is obtained by crystal growth on the ZnO thin film 2.
보다 상세하게 적층구조에 따른 결정성장특성을 살펴본다.The crystal growth characteristics according to the lamination structure will be described in more detail.
상기 ZnO박막(2)은 육방의 워자이트(Wurzeit) 구조를 가지는데, 제조방법과 제조조건에 거의 무관하게 기판(1)에 수직인 〈001〉방향으로 성장하는 특성을 갖는다.The ZnO thin film 2 has a hexagonal wurtzite structure and has a property of growing in the <001> direction perpendicular to the substrate 1, regardless of the manufacturing method and manufacturing conditions.
이러한 ZnO박막(2)의 결정성장특성이 ZnO박막(2)위에 성장되는 제1 ITO박막(3a)의 결정성장을 제어하게됨으로써, 〈001〉방향으로 성장된 ZnO박막(2)의 산소 최밀 충전면에 영향을 받아 제1 ITO박막(3a)의 산소최밀 충전면이 〈111〉방향으로 균일하게 성장된다.The crystal growth characteristic of the ZnO thin film 2 controls the crystal growth of the first ITO thin film 3a grown on the ZnO thin film 2 to improve the oxygen filling density of the ZnO thin film 2 grown in the <001> , The oxygen-rich filling surface of the first ITO thin film 3a is uniformly grown in the <111> direction.
결정성장에 있어서는 성장시키는 모체(여기서는 ZnO박막(2))와 이 모체위에 적층된 박막과의 격자부정합에 따라 성장되는 박막의 균일한 결정구조 및 그에따른 배향성이 결정된다. 본 액정배향 전극구조체에 있어서, 각 층의 결정구조에서 산소간의 거리와 규칙적인 배열관계를 통해 그 결정성과 배향성을 살펴본다.In the crystal growth, the uniform crystal structure of the thin film to be grown by the lattice mismatch between the substrate to be grown (here, the ZnO thin film 2) and the thin film laminated on the mother substrate and the orientation property are determined. In this liquid crystal alignment electrode structure, the crystallinity and the orientation of the crystal structure of each layer are examined through the regular arrangement relationship with the distance between oxygen.
ZnO박막(2)위에 성장된 bixbyite 입방 In2O3 구조를 갖는 제1 ITO박막(3a)의 결정구조를 살펴보면, 산소의 최밀 충전면이 결정학적인 〈111〉방향에 수직인 (111)면에 형성된다. 이와 같은 구조를 갖는 제1 ITO박막(3a)의 결정구조에서 산소의 층만을 고려할 때 산소최밀 충전층은 ABCC'B'A'의 순서를 기본주기로하여 교번적층된다. 여기서 A',B' 및 C'은 A,B 및 C층을 역전시켰을 경우 같은 모양을 갖는 역전층이다. 이와 같이 (111)면에 평행인 산소최밀충전면내의 인접산소간의 평균거리는 0.3353nm이고, ZnO격자상수(aZnO=0.32498)와 동일한 ZnO의 (001)면내의 산소간 거리와 3%정도의 부정합(mismatch)을 보인다.The crystal structure of the first ITO thin film 3a having the bixbyite cubic In2O3 structure grown on the ZnO thin film 2 is formed on the (111) plane perpendicular to the crystallographic <111> direction. Considering only the oxygen layer in the crystal structure of the first ITO thin film 3a having such a structure, the oxygen dense packing layer is alternately stacked in order of ABCC'B'A '. Where A ', B' and C 'are reversed layers having the same shape when the layers A, B and C are reversed. In this way, the average distance between adjacent oxygen in the oxygen-dense packing plane parallel to the (111) plane is 0.3353 nm, and the distance between the oxygen in the (001) plane of ZnO and the incoincidence of about 3% in the ZnO lattice constant (aZnO = 0.32498) mismatch.
이러한 결과로부터 ZnO박막(2) 위에 제1 ITO박막(3a)이 결정성장될 때의 부정합정도가 대단히 양호함을 알 수 있고, ZnO박막(2) 위에 성막된 제1 ITO박막(3a)은 〈111〉방향을 따라 산소최밀 충전면이 균일하게 형성된다.It can be seen from these results that the degree of mismatching when the first ITO thin film 3a is crystal-grown on the ZnO thin film 2 is very good and the first ITO thin film 3a formed on the ZnO thin film 2 has a high- 111 > direction, the oxygen-dense filling surface is uniformly formed.
이와 같이 성장된 제1 ITO박막(3a)은 LCD의 구동전극으로 이용되고, 제1 ITO박막(3a) 위에 산소조성비를 달리하여 형성되는 절연용 제2 ITO박막(3b)의 균일한 결정구조에 의해 액정이 일정방향으로 배향된다. 제1 ITO박막(3a) 위에 산소조성비를 달리하여 성장되는 제2 ITO박막(3b)은 성장시 산소조성비와는 무관하게 제1 ITO박막(3a)의 결정방향에만 영향을 받기 때문에, 제1 ITO박막(3a)의 결정구조와 동일하게 그 산소최밀 충전면이 〈111〉방향을 따라 형성되어 균일한 결정구조를 갖는다. 본 발명에 의한 액정배향 전극구조체의 제작방법을 제2a도 내지 제2c도를 통하여 설명한다.The first ITO thin film 3a thus grown is used as a driving electrode of the LCD and has a uniform crystal structure of the second ITO thin film 3b for insulation formed on the first ITO thin film 3a with different oxygen composition ratios The liquid crystal is oriented in a certain direction. Since the second ITO thin film 3b grown on the first ITO thin film 3a with a different oxygen composition ratio is influenced only by the crystal orientation of the first ITO thin film 3a regardless of the oxygen composition ratio during growth, The oxygen-dense packing plane is formed along the <111> direction in the same manner as the crystal structure of the thin film 3a and has a uniform crystal structure. A method of manufacturing the liquid crystal alignment electrode structure according to the present invention will be described with reference to Figs. 2a to 2c.
세정된 유리와 같은 기판(1)위에 ZnO박막(2)을 형성시킨다(제2a도). 이때, 아르곤과 산소의 혼합개스를 사용하여 ZnO박막(2)의 결정성과 〈001〉방향성을 향상시키며, ZnO박막(2)은 절연성을 갖도록 다량의 산소분위기 하에서 형성된다.A ZnO thin film 2 is formed on a substrate 1 such as a cleaned glass (Fig. 2a). At this time, the crystallinity and the <001> directionality of the ZnO thin film 2 are improved by using a mixed gas of argon and oxygen, and the ZnO thin film 2 is formed under a large amount of oxygen atmosphere so as to have insulation.
이어서, 상기 ZnO박막(2)위에 전도성이 좋은 제1 ITO박막(3a)을 〈111〉방향으로 형성시킨다(제2b도). 이 단계에서도, 아르곤과 산소의 혼합개스를 사용하여 결정성과 방향성이 향상된다.Then, a first ITO thin film 3a having a good conductivity is formed in the <111> direction on the ZnO thin film 2 (FIG. 2b). Even at this stage, the crystallinity and the directionality are improved by using a mixed gas of argon and oxygen.
제2 ITO성막단계에서는 LCD 구동시의 단락을 방지하기 위해 제1 ITO 박막(3a) 위에 절연성의 제2 ITO박막(3b)이 형성된다(제2c도). 이때에는 다량의 산소를 투입하여 제2 ITO박막(3b)내에 산소궁핍에 의한 캐리어가 발생되지 않도록 한다.In the second ITO film formation step, an insulating second ITO thin film 3b is formed on the first ITO thin film 3a to prevent a short circuit during driving of the LCD (FIG. 2C). At this time, a large amount of oxygen is injected to prevent carriers from being generated due to oxygen impurity in the second ITO thin film 3b.
이상과 같은 제조방법을 거쳐 제조되는 액정배향 전극구조체는 제1 및 제2 ITO 박막(3a)(3b)층이 전범 위에 걸쳐 기판에 대해 45도 각도로 경사진 균일한 결정구조를 형성하여 액정분자를 일정하게 배열시킨다.In the liquid crystal alignment electrode structure manufactured through the above-described manufacturing method, the first and second ITO thin films 3a and 3b form a uniform crystal structure inclined at an angle of 45 degrees with respect to the substrate, .
종래에는 ITO박막층위에 경사증착법에 의해 적층된 규소산화물박막의 경사구조가 부분적으로만 균일한 특성을 나타내 대면적에 걸친 균일성을 확보하지 못하였고, 배향막의 조성물질이 고분자 물질로 조성되는 배향막에는 마찰법에 의한 표면처리가 반드시 수행된다. 그러나 본 발명에 따른 액정배향 전극구조체는 기판위에 적층된 ZnO박막에 의해 증착면 전체에 걸쳐 균일한 경사구조를 갖는 제1 및 제2 ITO박막이 형성됨으로써, 대면적에 걸쳐 액정을 균일하게 배향시킬 수 있고, 제작이 용이하다.Conventionally, the inclined structure of the silicon oxide thin film deposited by the oblique deposition method on the ITO thin film layer is only partially uniform, and uniformity over a large area can not be ensured. In the alignment film in which the composition material of the alignment film is formed of a polymer material The surface treatment by the friction method is necessarily performed. However, in the liquid crystal alignment electrode structure according to the present invention, the first and second ITO thin films having a uniform inclined structure are formed over the entire deposition surface by the ZnO thin film deposited on the substrate, thereby uniformly orienting the liquid crystal over a large area And can be manufactured easily.
지금까지 설명된 바와 같이, 본 발명에 따른 액정배향 전극구조체에 따르면 기판 위에 형성된 ZnO박막의 결정성장특성을 따라 순차적으로 형성된 제1 및 제2 ITO 박막의 표면 조직의 서브그레인이 기판에 대해 45도의 각도로 경사진 구조를 균일하게 갖게 됨으로써 제2 ITO 박막 위에 위치되는 액정을 균일하게 배향시킬 수 있게 되어, 종래 LCD제조시 배향막 표면의 마찰공정에서 야기된 이물질 등의 혼입을 피할 수 있다.As described above, according to the liquid crystal alignment electrode structure according to the present invention, the sub-grains of the surface texture of the sequentially formed first and second ITO thin films along the crystal growth characteristics of the ZnO thin film formed on the substrate are oriented at 45 degrees By uniformly arranging the structure inclined at an angle, it is possible to uniformly orient the liquid crystal positioned on the second ITO thin film, and thus it is possible to avoid the inclusion of foreign substances and the like caused in the rubbing process of the alignment film surface in the conventional LCD production.
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