KR980006928A - Wide band dominant control oscillator - Google Patents

Wide band dominant control oscillator Download PDF

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Publication number
KR980006928A
KR980006928A KR1019960026321A KR19960026321A KR980006928A KR 980006928 A KR980006928 A KR 980006928A KR 1019960026321 A KR1019960026321 A KR 1019960026321A KR 19960026321 A KR19960026321 A KR 19960026321A KR 980006928 A KR980006928 A KR 980006928A
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KR
South Korea
Prior art keywords
frequency
control unit
output
voltage
unit
Prior art date
Application number
KR1019960026321A
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Korean (ko)
Other versions
KR100209934B1 (en
Inventor
이덕형
조현룡
김송강
임승무
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960026321A priority Critical patent/KR100209934B1/en
Publication of KR980006928A publication Critical patent/KR980006928A/en
Application granted granted Critical
Publication of KR100209934B1 publication Critical patent/KR100209934B1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • H03B5/1852—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device the semiconductor device being a field-effect device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance

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  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

본 발명은 두개의 고전자 능동 트랜지스터의 온시 각각의 게이트에 전압을 인가하여 출력 주파수를 광범위하고 정밀하게 제어하기 위한 광대역 주파주 제어 발진 장치에 관한 것이다. 본 발명의 광대역 주파수 제어발진 장치는 원하는 주파수의 대역을 결정하는 입력하는 주파수 튜닝부와, 주파수 튜닝부로부터 입력된 주파수를 증폭 및 발진시키는 발진부와, 출력 주파수 위상의 안전성을 향상시키는 위상 제어부와, 넓은 대역의 출력 주파수를 얻기 위하여 주파수 범위를 가변시키는 주파수 제어부와, 주파수 제어부의 제2 갈륨 비소 트랜지스터에 인가되는 전압을 제어하는 제2 전압제어부와, 주파수를 정밀하게 제어하는 제1전압 제어부로 이루어졌다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0002] The present invention relates to a broadband dominant frequency control oscillator for applying a voltage to each gate of a high-electron active transistor on-time to control an output frequency widely and precisely. A wideband frequency-controlled oscillator of the present invention includes an input frequency tuning unit for determining a frequency band of a desired frequency, an oscillation unit for amplifying and oscillating a frequency inputted from the frequency tuning unit, a phase control unit for improving safety of the output frequency phase, A second voltage control unit for controlling the voltage applied to the second gallium arsenide transistor of the frequency control unit, and a first voltage control unit for precisely controlling the frequency, in order to obtain a wide band output frequency lost.

Description

광대역 주파주 제어 발진 장치Broadband control oscillator

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명의 실시예에 따른 광대역 주파수 제어 발진 장치를 도시하는 상세회로도.FIG. 1 is a detailed circuit diagram showing a broadband frequency-controlled oscillator according to an embodiment of the present invention; FIG.

Claims (4)

원하는 주파수의 대역을 결정하는 입력하는 주파수 튜닝부와, 상기 주파수 튜닝부로부터 입력된 주파수를 증폭 및 발진시키는 발진부와, 출력 주파수 위상의 안전성을 향상시키는 위상 제어부와, 넓은 대역의 출력 주파수를 얻기 위하여 주파수 범위를 가변시키는 주파수 제어부와, 상기 주파수 제어부의 제2 갈륨 비소 트랜지스터에 인가되는 전압을 제어하는 제2 전압제어부를 포함하는 것을 특징으로 하는 광대역 주파수 제어 발진 장치An oscillation unit for amplifying and oscillating the frequency inputted from the frequency tuning unit; a phase control unit for improving the stability of the output frequency phase; and a phase control unit for obtaining a wide band output frequency, And a second voltage control unit for controlling a voltage applied to the second gallium arsenide transistor of the frequency control unit, 제1항에 있어서, 상기 주파수 튜닝부는 제 1 고전자 능동 트랜지스터에 직류 전압을 인가하고 주파수 대역을 결정하는 제 1 전도선과 주파수 대역을 결정하는 제 1 커패시터가 병렬로 구성되는 광대역 주파수 제어 발진 장치The frequency tuning unit according to claim 1, wherein the frequency tuning unit includes a first conduction line for applying a direct current voltage to the first high electronically active transistor and determining a frequency band, and a first capacitor for determining a frequency band, 제1항에 있어서 상기 발진부는 드레인이 상기 주파수 제어부에 연결되고, 드레인에 전압이 인가되며, 게이트에는 제 2 전도선이 연결되는 제 1 고전자 트랜지스터로 구성되고, 제2 전도선과 접지사이에 연결되어 출력 주파수를 정밀하게 제어하는 주파수 정밀 제어 수단을 구비하는 광대역 주파수 제어 발진 장치2. The semiconductor device according to claim 1, wherein the oscillation unit comprises a first high-electron transistor having a drain connected to the frequency control unit, a drain connected to the drain, and a second conductive line connected to the gate, And a frequency precise control means for accurately controlling the output frequency, 제1항에 있어서, 상기 주파수 제어부는 게이트에는 제 4 전도선이 연결되고, 드레인은 전압이 인가되며, 또한 드레인을 통하여 출력되는 출력전압을 강하시키어 출력하는 제 3 커패시터와 출력 전압의 일부를 강하시키어 접지로 연결하는 제 1 저항이 연결되는 제 2 고전자 능동 트랜지스터로 구성되고, 제 4 전도선과 접지사이에 연결되어 주파수 대역을 광대역으로 가변시키는 주파수 광대역 제어 수단을 구비하는 광대역 주파수 제어 발진 장치The frequency control unit according to claim 1, wherein the frequency control unit includes a third capacitor connected to a fourth conductive line, a drain connected to the gate, a third capacitor for dropping an output voltage output through the drain, And a frequency broadband control means connected between the fourth conduction line and the ground to change the frequency band to a wide band, the broadband frequency control oscillator comprising a first high- ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960026321A 1996-06-29 1996-06-29 Wide band frequency control oscillation apparatus KR100209934B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960026321A KR100209934B1 (en) 1996-06-29 1996-06-29 Wide band frequency control oscillation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960026321A KR100209934B1 (en) 1996-06-29 1996-06-29 Wide band frequency control oscillation apparatus

Publications (2)

Publication Number Publication Date
KR980006928A true KR980006928A (en) 1998-03-30
KR100209934B1 KR100209934B1 (en) 1999-07-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960026321A KR100209934B1 (en) 1996-06-29 1996-06-29 Wide band frequency control oscillation apparatus

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KR100209934B1 (en) 1999-07-15

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