KR980006527A - Thin film transistor and liquid crystal display device using same - Google Patents

Thin film transistor and liquid crystal display device using same Download PDF

Info

Publication number
KR980006527A
KR980006527A KR1019960020347A KR19960020347A KR980006527A KR 980006527 A KR980006527 A KR 980006527A KR 1019960020347 A KR1019960020347 A KR 1019960020347A KR 19960020347 A KR19960020347 A KR 19960020347A KR 980006527 A KR980006527 A KR 980006527A
Authority
KR
South Korea
Prior art keywords
insulating layer
thin film
film transistor
substrate
entire surface
Prior art date
Application number
KR1019960020347A
Other languages
Korean (ko)
Other versions
KR100190043B1 (en
Inventor
임승재
진용완
사공동식
이승재
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960020347A priority Critical patent/KR100190043B1/en
Publication of KR980006527A publication Critical patent/KR980006527A/en
Application granted granted Critical
Publication of KR100190043B1 publication Critical patent/KR100190043B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)

Abstract

본 발명은 기판; 소정 영역을 제외한 상기 기판 상부에 형성된 제1차광부재; 상기 제1차 광부재를 포함하는 기판 전면에 형성된 제1절연층; 제1절연층상에 형성된 게이트 전극; 게이트 전극을 포함하는 기판 전면에 형성된 제2절연층; 상기 제2절연층상에 형성된 반도체층; 상기 반도체층과 전기적으로 연결되어 있는 소오스/드레인 전극; 상기 소오스/드레인 전극을 포함하는 기판 전면에 형성된 제3절연층; 및 상기 제3절연층 상부에 형성된 제2차광부재를 포함하여 이루어진 것을 특징으로 하는 박막 트랜지스터를 제공한다. 본 발명에 따르면, 플리커 발생이 거의 없고 구동 IC에 걸리는 전압도 최대가 되어 고휘도의 화면 구현이 가능하다.The present invention is a substrate; A first light blocking member formed on the substrate except for a predetermined region; A first insulating layer formed on an entire surface of the substrate including the primary light member; A gate electrode formed on the first insulating layer; A second insulating layer formed on the entire surface of the substrate including the gate electrode; A semiconductor layer formed on the second insulating layer; A source / drain electrode electrically connected to the semiconductor layer; A third insulating layer formed on an entire surface of the substrate including the source / drain electrodes; And a second light blocking member formed on the third insulating layer. According to the present invention, there is almost no flicker and the voltage applied to the driving IC is maximized, thereby enabling high brightness screen.

Description

박막 트랜지스터 및 이를 채용한 액정표시장치Thin film transistor and liquid crystal display device using same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 에치백형 박막 트랜지스터의 구조를 나타낸 도면3 is a diagram showing the structure of an etch back type thin film transistor according to the present invention.

제4도는 본 박명에서 사용하는 투사 광학계를 개략적으로 나타낸 도면이다.4 is a diagram schematically showing a projection optical system used in the present invention.

Claims (4)

기판; 소정 영역을 제외한 상기 기판 상부에 형성된 제1차광부재; 상기 제1차 광부재를 포함하는 기판 전면에 형성된 제1절연층; 제1절연층상에 형성된 게이트 전극; 게이트 전극을 포함하는 기판 전면에 형성된 제2절연층; 상기 제2절연층상에 형성된 반도체층; 상기 반도체층과 전기적으로 연결되어 있는 소오드/드레인 전극; 상기 소오스/드레인 전극을 포함하는 기판 전면에 형성된 제3절연층; 및 상기 제3절연층 상부에 형성된 제2차 광부재를 포함하여 이루어진 것을 특징으로 하는 박막 트랜지스터.Board; A first light blocking member formed on the substrate except for a predetermined region; A first insulating layer formed on an entire surface of the substrate including the primary light member; A gate electrode formed on the first insulating layer; A second insulating layer formed on the entire surface of the substrate including the gate electrode; A semiconductor layer formed on the second insulating layer; A cathode / drain electrode electrically connected to the semiconductor layer; A third insulating layer formed on an entire surface of the substrate including the source / drain electrodes; And a secondary light member formed on the third insulating layer. 제1항에 있어서, 상기 차광 부재가 크롬으로 이루어지는 것을 특징으로 하는 박막 트랜지스터.The thin film transistor of claim 1, wherein the light blocking member is made of chromium. 제1항에 있어서, 상기 차광 부재가 아크릴수지에 카본블랙이 분산된 유기물로 이루어지는 것을 특징으로 하는 박막 트랜지스터.The thin film transistor of claim 1, wherein the light blocking member is formed of an organic material in which carbon black is dispersed in an acrylic resin. 박막 트랜지스터와 전극층이 형성되어 있는 제1기판, 전극층, 블랙 메트릭스 및 칼라 필터가 형성되어 있는 제2기판 및 상기 제1,2기판사이에 고분자액정복합체가 주입되어 있는 고분자 분산형 액정표시장치에 있어서, 상기 박막 트랜지스터가 제1항 내지 제3항중 어느 한 항에 따른 박막 트랜지스터인 것을 특징으로 하는 고분자형 액정표시장치.In a polymer dispersed liquid crystal display device in which a polymer liquid crystal composite is injected between a first substrate on which a thin film transistor and an electrode layer are formed, a second substrate on which an electrode layer, a black matrix and a color filter are formed, and the first and second substrates. And the thin film transistor is the thin film transistor according to any one of claims 1 to 3.
KR1019960020347A 1996-06-07 1996-06-07 Thin film transistor and lcd using it KR100190043B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960020347A KR100190043B1 (en) 1996-06-07 1996-06-07 Thin film transistor and lcd using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960020347A KR100190043B1 (en) 1996-06-07 1996-06-07 Thin film transistor and lcd using it

Publications (2)

Publication Number Publication Date
KR980006527A true KR980006527A (en) 1998-03-30
KR100190043B1 KR100190043B1 (en) 1999-07-01

Family

ID=19461095

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960020347A KR100190043B1 (en) 1996-06-07 1996-06-07 Thin film transistor and lcd using it

Country Status (1)

Country Link
KR (1) KR100190043B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471771B1 (en) * 1996-12-23 2005-07-07 삼성전자주식회사 Data-open free thin film transistor liquid crystal display device using light shielding film
US9125513B2 (en) 2012-05-03 2015-09-08 Woo Hyeop Kim Handle-interlocking airtight boiling pot

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471771B1 (en) * 1996-12-23 2005-07-07 삼성전자주식회사 Data-open free thin film transistor liquid crystal display device using light shielding film
US9125513B2 (en) 2012-05-03 2015-09-08 Woo Hyeop Kim Handle-interlocking airtight boiling pot

Also Published As

Publication number Publication date
KR100190043B1 (en) 1999-07-01

Similar Documents

Publication Publication Date Title
US7061554B2 (en) Liquid crystal display
US6839122B2 (en) Liquid crystal display panel
CN101738790A (en) Electrooptic panel, projection display, and method for manufacturing electrooptic panel
KR960015017A (en) Color display device
KR970059776A (en) Structure of liquid crystal display device
KR970067946A (en) Thin film transistor device and liquid crystal display device
KR100426560B1 (en) Liquid crystal display
KR980003722A (en) Active Matrix Substrate and Manufacturing Method Thereof
KR100317209B1 (en) Active matrix liquid crystal display device
KR970071103A (en) Active matrix liquid crystal panel and projection system using it
KR970048810A (en) Liquid Crystal Display and Manufacturing Method Thereof
KR960018721A (en) LCD Display
KR980006527A (en) Thin film transistor and liquid crystal display device using same
KR100285652B1 (en) Liquid crystal display device having wide viewing angle and manufacturing method thereof
JP3237484B2 (en) Active matrix type liquid crystal display device and manufacturing method thereof
KR970059800A (en) Planar Electric Field Liquid Crystal Display with Floating Electrodes
KR100246921B1 (en) Color liquid crystal display device
JP2004077703A (en) Liquid crystal display
KR100239336B1 (en) Liquid crystal display
KR101197762B1 (en) Back light unit and liquid crystal display including the same
KR100813468B1 (en) Liquid crystal display device
KR930008500A (en) LCD Light Valve Device
JPH11174494A (en) Active matrix liquid crystal display device
KR970048838A (en) LCD
JP2020126250A (en) Electrooptical device and electronic apparatus

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20140102

Year of fee payment: 16

FPAY Annual fee payment

Payment date: 20141231

Year of fee payment: 17

EXPY Expiration of term