KR980006276A - Semiconductor device having variable drain current transistor - Google Patents

Semiconductor device having variable drain current transistor Download PDF

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Publication number
KR980006276A
KR980006276A KR1019960023271A KR19960023271A KR980006276A KR 980006276 A KR980006276 A KR 980006276A KR 1019960023271 A KR1019960023271 A KR 1019960023271A KR 19960023271 A KR19960023271 A KR 19960023271A KR 980006276 A KR980006276 A KR 980006276A
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KR
South Korea
Prior art keywords
semiconductor device
source
drains
gate
current transistor
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Application number
KR1019960023271A
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Korean (ko)
Other versions
KR100225944B1 (en
Inventor
유경동
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960023271A priority Critical patent/KR100225944B1/en
Priority to JP9166672A priority patent/JPH1065148A/en
Publication of KR980006276A publication Critical patent/KR980006276A/en
Application granted granted Critical
Publication of KR100225944B1 publication Critical patent/KR100225944B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

본 발명은 동일 면적에 트랜지스터의 전류 전달 용량을 증감하기 용이하도록 트랜지스터를 구비하기 위하여 사각형 액티브영역상부에 게이트를 Y형 또는 +형으로 구비하고, 게이트에 의해 구분되는 액티브영역에는 소오스 또는 드레인 확상영역을 각각 형성하고, 상기 확산영역중의 일정부분은 소오스로 설정하고, 소오스로 설정된 것을 제외한 확산영역을 드레인으로 설정하고, 상기 드레인중의 하나 또는 두개를 트랜지스터에 이용하는 기술이다.According to the present invention, a gate is provided in a Y-type or a + -type in an upper portion of a rectangular active region in order to provide a transistor so as to easily increase or decrease the current transfer capacity of the transistor in the same area. Are formed respectively, a predetermined portion of the diffusion region is set to a source, a diffusion region is set to a drain except that set to a source, and one or two of the drains are used for the transistor.

Description

가변 드레인 전류형 트랜지스터를 갖는 반도체 장치Semiconductor device having variable drain current transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 1도는 본 발명의 제1실시예에 의해 Y형으로 게이트 구조가 형성되는 가변 드레인 전류형 트랜지스터의 레이아웃을 도시한 도면1 is a diagram showing a layout of a variable drain current transistor in which a gate structure is formed in Y type according to the first embodiment of the present invention.

Claims (6)

사각형 액티브영역에 Y형 게이트가 형성되고, 상기 Y형 게이트에 의해 세곳으로 구분되는 액티브영역에는 소오스 또는 드레인 확산영역이 각각 형성되고, 상기 확산영역중의 하나를 소오스로 설정하고, 이 소오스에 접속되는 금속배선이 형성되고, 상기 소오스로 설정된 것을 제외한 두개의 확산영역을 드레인으로 설정하고, 상기 드레인중의 하나 또는 두개의 접속되는 금속배선이 형성된 것을 특징으로 하는 가변 드레인 전류형 트랜지스터를 갖는 반도체 장치A Y-type gate is formed in the rectangular active region, and a source or drain diffusion region is formed in each of the active regions divided by the Y-type gate, and one of the diffusion regions is set as a source and connected to the source. A semiconductor device having a variable drain current transistor, wherein a metal wiring is formed, two diffusion regions except for the source are set as drains, and one or two connected metal wirings are formed. 제1항에 있어서,상기 게이트 채널 폭이 적은 것을 원하는 경우에는 드레인중의 하나에 금속배선을 접속하는 것을 특징으로 하는 가변 드레인 전류형 트랜지스터를 갖는 반도체 장치The semiconductor device with a variable drain current transistor according to claim 1, wherein a metal wiring is connected to one of the drains when the gate channel width is small. 제1항에 있어서, 상기 게이트의 채널 폭이 증대되는 것을 원하는 경우에는 두개의 드레인이 금속배선이 접속되는 것을 특징으로 하는 가변 드레인 전류형 트랜지스터를 갖는 반도체장치2. The semiconductor device according to claim 1, wherein when the channel width of the gate is desired to be increased, two drains are connected with metal wirings. 사각형 액티브영역에 +형 게이트가 형성되고, 상기 +형 게이트에 의해 네 곳으로 구분되는 액티브영역에는 소오스 또는 드레인용 확산영역이 각각 형성되고, 상기 확산영역중의 사선 방향으로 인접되는 두개를 소오스로 설정하고, 이 소오스에 접속되는 금속배선이 형성되고, 상기 소오스로 설정된 것을 제외한 두개의 확산영역을 드레인으로 설정하고, 상기 드레인중의 하나 또는 두개에 접속되는 금속배선이 형성된 것을 특징으로 하는 가변 드레인 전류형 트랜지스터를 갖는 반도체 장치A positive gate is formed in a rectangular active region, and a source or drain diffusion region is formed in each of the active regions divided by the positive gate, and two adjacent adjacent diagonal lines of the diffusion region are sourced. And a metal wiring connected to the source is formed, two diffusion regions except for the source are set as drains, and a metal wiring connected to one or two of the drains is formed. Semiconductor device with current transistor 제4항에 있어서, 상기 게이트의 채널 폭이 적은 것을 원하는 경우에는 드레인중의 하나에 금속배선이 접속되는 것을 특징으로 하는 가변 드레인 전류형 트랜지스터를 갖는 반도체 장치5. The semiconductor device according to claim 4, wherein a metal wiring is connected to one of the drains if the channel width of the gate is small. 제4항에 있어서, 상기 게이트의 채널 폭이 증대되는 것을 원하는 경우에는 두개의 드레인이 금속배선이 접속되는 것을 특징으로 가변 드레인 전류형 트랜지스터를 갖는 반도체 장치5. The semiconductor device according to claim 4, wherein two drains are connected with metal wirings when the channel width of the gate is desired to be increased.
KR1019960023271A 1996-06-24 1996-06-24 Semiconductor device having variable drain current type transistor KR100225944B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019960023271A KR100225944B1 (en) 1996-06-24 1996-06-24 Semiconductor device having variable drain current type transistor
JP9166672A JPH1065148A (en) 1996-06-24 1997-06-10 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960023271A KR100225944B1 (en) 1996-06-24 1996-06-24 Semiconductor device having variable drain current type transistor

Publications (2)

Publication Number Publication Date
KR980006276A true KR980006276A (en) 1998-03-30
KR100225944B1 KR100225944B1 (en) 1999-10-15

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KR1019960023271A KR100225944B1 (en) 1996-06-24 1996-06-24 Semiconductor device having variable drain current type transistor

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JP (1) JPH1065148A (en)
KR (1) KR100225944B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210088928A (en) 2020-01-07 2021-07-15 문형석 Two hands free clothes attachable bag

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724044B2 (en) * 2002-05-10 2004-04-20 General Semiconductor, Inc. MOSFET device having geometry that permits frequent body contact
JP4602908B2 (en) * 2006-01-10 2010-12-22 シャープ株式会社 Semiconductor device
US9927717B2 (en) 2013-12-18 2018-03-27 Asml Netherlands B.V. Inspection method and apparatus, and lithographic apparatus
CN113540213B (en) * 2020-04-17 2023-07-14 长鑫存储技术有限公司 Active region, active region array and forming method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210088928A (en) 2020-01-07 2021-07-15 문형석 Two hands free clothes attachable bag

Also Published As

Publication number Publication date
KR100225944B1 (en) 1999-10-15
JPH1065148A (en) 1998-03-06

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