KR980005830A

KR980005830A - Method for forming field oxide film of semiconductor device

Info

Publication number: KR980005830A
Application number: KR1019960024531A
Authority: KR
Inventors: 오영균
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1996-06-27
Filing date: 1996-06-27
Publication date: 1998-03-30

Abstract

본 발명은 반도체 소자의 제조방법에 있어서, 필드 산화막 형성시 버퍼로서의 폴리실리콘으로 인하여 발생되는 문제를 해결하기 위하여, 불순물이 도핑되지 않은 제1폴리실리콘 및 도핑된 제2폴리실리콘을 패드 산화막과 질화막 사이에 형성함으로써, 필드 산화막의 특성을 개선하여 반도체 소자의 신뢰성을 향상시킬 수 있는 반도체 소자의 필드 산화막 형성방법에 관한 것으로, 반도체 기판 상부에 패드 산화막을 형성하는 단계; 패드 산화막 상부에 제1폴리실리콘을 형성하는 단계; 제1폴리실리콘 상부에 제2폴리실리콘을 형성하는 단계; 제2폴리실리콘 상부에 질화막을 형성하는 단계; 제1 및 제2폴리실리콘과 질화막을 예정된 형태의 필드 산화막 형성을 위한 마스크로 패턴화하는 단계; 마스크를 경계로하여 필드 산화막을 성장시키는 단계를 포함하는 것을 특징으로 한다.In order to solve the problem caused by polysilicon as a buffer in forming a field oxide film in a method for manufacturing a semiconductor device, the present invention provides a method of manufacturing a semiconductor device, which comprises forming a first polysilicon layer doped with no impurity, A method of forming a field oxide film of a semiconductor device capable of improving the reliability of a semiconductor device by improving characteristics of a field oxide film, comprising the steps of: forming a pad oxide film on a semiconductor substrate; Forming a first polysilicon layer on the pad oxide layer; Forming a second polysilicon over the first polysilicon; Forming a nitride film on the second polysilicon; Patterning the first and second polysilicon and the nitride film with a mask for forming a predetermined type of field oxide film; And growing a field oxide film with the mask as a boundary.

Description

Method for forming field oxide film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2a도 내지 제2d도는 본 발명의 일 실시예에 따른 반도체 소자의 필드 산화막 형성방법을 나타낸 공정 단면도.FIGS. 2a through 2d are process cross-sectional views illustrating a method of forming a field oxide film of a semiconductor device according to an embodiment of the present invention.

Claims

Forming a pad oxide film on the semiconductor substrate; Forming a first polysilicon layer on the pad oxide layer; Forming a second polysilicon over the first polysilicon; Forming a nitride film on the second polysilicon; Patterning said first and second polysilicon and said nitride film with a mask for the formation of a predetermined type of field oxide film; And growing a field oxide film with the mask as a boundary.

The method of claim 1, wherein the first polysilicon is polysilicon doped with no impurities.

2. The method of claim 1, wherein the second polysilicon is an in-situ doped polysilicon containing NH ₃ gas.

In, the doped polysilicon 500 to 580 ℃ temperature and Si ₂ H ₆ -NH ₃ gas deposition method, and 0.2 to form a field oxide film of a semiconductor device characterized in that the deposition at a pressure of 1Torr to claim 3.

4. The method of claim 3, wherein the doped polysilicon is formed to a thickness of 90 to 110 angstroms.

※ Note: It is disclosed by the contents of the first application.