KR980003996A - Video Mirror Device Using Line Memory - Google Patents
Video Mirror Device Using Line Memory Download PDFInfo
- Publication number
- KR980003996A KR980003996A KR1019960023890A KR19960023890A KR980003996A KR 980003996 A KR980003996 A KR 980003996A KR 1019960023890 A KR1019960023890 A KR 1019960023890A KR 19960023890 A KR19960023890 A KR 19960023890A KR 980003996 A KR980003996 A KR 980003996A
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- KR
- South Korea
- Prior art keywords
- line memory
- output
- address generator
- line
- read address
- Prior art date
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Abstract
본 발명은 라인 메모리를 이용한 영상미러 장치에 관한 것으로서, 영상을 구성하는 하나의 라인에 해당하는 화소데이터를 저장하는 제1라인메모리; 제1라인메모리에 저장된 영상데이터의 다음 라인에 해당하는 데이터를 저장하는 제2라인메모리; 제1라인메모리 또는 제2라인메모리의 쓰기어드레스를 발생하는 쓰기어드레스발생기; 제1라인메모리 또는 제2라인메모리의 읽기 어드레스를 발생하는 읽기어드레스 발생기; 쓰기어드레스 발생기에서 출력되는 쓰기 어드레스, 일기어드레스 발생기에서 출력되는 읽기 어드레스 중 하나를 선택하여 제1라인메모리로 출력하는 제1선택기; 쓰기어드레스 발생기에서 출력되는 쓰기 어드레스, 읽기어드레스 발생기에서 출력되는 읽기 어드레스 중 하나를 선택하여 제2라인메모리로 출력하는 제2선택기; 및 제1라인메모리, 제2라인메모리로 출력 데이터 중 하나를 선택하여 출력하는 데이터출력 선택기를 포함함을 특징으로 한다.The present invention relates to an image mirror apparatus using a line memory, comprising: a first line memory configured to store pixel data corresponding to one line constituting an image; A second line memory for storing data corresponding to a next line of image data stored in the first line memory; A write address generator for generating a write address of the first line memory or the second line memory; A read address generator for generating a read address of the first line memory or the second line memory; A first selector for selecting one of a write address output from the write address generator and a read address output from the diary address generator and outputting the selected address to the first line memory; A second selector for selecting one of a write address output from the write address generator and a read address output from the read address generator and outputting the selected address to the second line memory; And a data output selector for selecting and outputting one of the output data to the first line memory and the second line memory.
본 발명에 의하면 어드레스 제어를 통해 영상 미러를 구현하는데 2개의 필드메모리를 사용하는 대신 크기가 훨씬 작은 라인 메모리 2개만으로도 영상미러를 구현할 수 있다.According to the present invention, instead of using two field memories to implement an image mirror through address control, an image mirror can be implemented using only two line memories having a much smaller size.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 따른 영상미러 장치의 구성을 도시한 블록도이다.1 is a block diagram showing the configuration of an image mirror apparatus according to the present invention.
제2a도 내지 제2e도는 본 발명의 실시예에 대한 동작을 설명하기 위한 타이밍도를 도시한 것이다.2A through 2E illustrate timing diagrams for describing an operation of an embodiment of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960023890A KR980003996A (en) | 1996-06-26 | 1996-06-26 | Video Mirror Device Using Line Memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960023890A KR980003996A (en) | 1996-06-26 | 1996-06-26 | Video Mirror Device Using Line Memory |
Publications (1)
Publication Number | Publication Date |
---|---|
KR980003996A true KR980003996A (en) | 1998-03-30 |
Family
ID=66287672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960023890A KR980003996A (en) | 1996-06-26 | 1996-06-26 | Video Mirror Device Using Line Memory |
Country Status (1)
Country | Link |
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KR (1) | KR980003996A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100533970B1 (en) * | 1997-11-20 | 2006-05-03 | 주식회사 하이닉스반도체 | Highly Integrated Memory Device and Manufacturing Method Thereof |
-
1996
- 1996-06-26 KR KR1019960023890A patent/KR980003996A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100533970B1 (en) * | 1997-11-20 | 2006-05-03 | 주식회사 하이닉스반도체 | Highly Integrated Memory Device and Manufacturing Method Thereof |
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