KR980003865A - Photomask of semiconductor device and method of forming charge storage electrode using same - Google Patents
Photomask of semiconductor device and method of forming charge storage electrode using same Download PDFInfo
- Publication number
- KR980003865A KR980003865A KR1019960026510A KR19960026510A KR980003865A KR 980003865 A KR980003865 A KR 980003865A KR 1019960026510 A KR1019960026510 A KR 1019960026510A KR 19960026510 A KR19960026510 A KR 19960026510A KR 980003865 A KR980003865 A KR 980003865A
- Authority
- KR
- South Korea
- Prior art keywords
- photomask
- light
- charge storage
- forming
- pattern
- Prior art date
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- Electrodes Of Semiconductors (AREA)
Abstract
1. 청구범위에 기재된 발명이 속한 기술분야1. Technical field to which the invention described in the claims belongs
반도체 장치 제조.Semiconductor device manufacturing.
2. 발명이 해결하려고 하는 기술적 과제2. Technical Challenges to be Solved by the Invention
종래의 실린더형 전하저장 전극 형성시, 희생막과 제2폴리실리콘막을 중착하고, 패터닝하는 공정 및 희생막 제거 공정이 필수적으로 요구되므로써, 공정이 복잡하고, 또 스페이서 형태의 제2폴리실리콘막 패턴이 무너지는 현상등으로 공정 상의 페일(fail)을 유발하는 문제점이 있었음.In the conventional method of forming a cylindrical charge storage electrode, a sacrificial layer and a second polysilicon layer are stacked and patterned, and a sacrificial layer removal process is indispensably required. Therefore, the process is complicated, and the second polysilicon layer pattern Which causes a failure in the process due to the collapse phenomenon.
3. 발명이 해결방법의 요지3. Invention is the point of solution
희생막 및 제2폴리실리콘막을 중착하지 않는 반도체 장치의 실린더형 전하저장 전극 형성을 위한 포토 마스크 및 그를 사용한 전하저장 전극 형성방법을 제공하고자 함.A photomask for forming a cylindrical charge storage electrode of a semiconductor device which does not impregnate a sacrificial layer and a second polysilicon film, and a method of forming a charge storage electrode using the photomask.
4. 발명의 중요한 용도4. Important Uses of the Invention
반도체 장치의 전하저장 전극 형성에 이용됨.Used to form charge storage electrodes of semiconductor devices.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2a도는 본 발명의 일실시예에 따른 전하저장 전극 형성을 위한 포토 마스크의 레이아웃도.FIG. 2A is a layout view of a photomask for forming a charge storage electrode according to an embodiment of the present invention; FIG.
제2b도 내지 제2c도는 본 발명의 일실시예에 따른 포토 마스크를 사용한 전하저장 전극 형성 공정도.FIGS. 2b to 2c are views showing a process of forming a charge storage electrode using a photomask according to an embodiment of the present invention. FIG.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026510A KR980003865A (en) | 1996-06-29 | 1996-06-29 | Photomask of semiconductor device and method of forming charge storage electrode using same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026510A KR980003865A (en) | 1996-06-29 | 1996-06-29 | Photomask of semiconductor device and method of forming charge storage electrode using same |
Publications (1)
Publication Number | Publication Date |
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KR980003865A true KR980003865A (en) | 1998-03-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960026510A KR980003865A (en) | 1996-06-29 | 1996-06-29 | Photomask of semiconductor device and method of forming charge storage electrode using same |
Country Status (1)
Country | Link |
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KR (1) | KR980003865A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100489521B1 (en) * | 2002-09-09 | 2005-05-16 | 동부아남반도체 주식회사 | Reticle for fabricating multi-level pattern |
KR100911873B1 (en) * | 2006-10-09 | 2009-08-11 | 주식회사 하이닉스반도체 | Exposure mask for forming storage node of capacitor in semiconductor memory device |
-
1996
- 1996-06-29 KR KR1019960026510A patent/KR980003865A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100489521B1 (en) * | 2002-09-09 | 2005-05-16 | 동부아남반도체 주식회사 | Reticle for fabricating multi-level pattern |
KR100911873B1 (en) * | 2006-10-09 | 2009-08-11 | 주식회사 하이닉스반도체 | Exposure mask for forming storage node of capacitor in semiconductor memory device |
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