KR970705176A - 고해상 및 넓은 동적 범위를 지니는 캐패시터 결합된 무접점 이미저(imager)를 제조하는 방법(METHOD OF MANUFACTURING A CAPACITOR COUPLED CONTACTLESS IMAGER WITH HIGH RESOLUTION AND WIDE MYNAMIC RANGE) - Google Patents

고해상 및 넓은 동적 범위를 지니는 캐패시터 결합된 무접점 이미저(imager)를 제조하는 방법(METHOD OF MANUFACTURING A CAPACITOR COUPLED CONTACTLESS IMAGER WITH HIGH RESOLUTION AND WIDE MYNAMIC RANGE)

Info

Publication number
KR970705176A
KR970705176A KR1019970700144A KR19970700144A KR970705176A KR 970705176 A KR970705176 A KR 970705176A KR 1019970700144 A KR1019970700144 A KR 1019970700144A KR 19970700144 A KR19970700144 A KR 19970700144A KR 970705176 A KR970705176 A KR 970705176A
Authority
KR
South Korea
Prior art keywords
mynamic
wide
manufacturing
range
high resolution
Prior art date
Application number
KR1019970700144A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970705176A publication Critical patent/KR970705176A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/124—Polycrystalline emitter

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
KR1019970700144A 1995-05-10 1997-01-10 고해상 및 넓은 동적 범위를 지니는 캐패시터 결합된 무접점 이미저(imager)를 제조하는 방법(METHOD OF MANUFACTURING A CAPACITOR COUPLED CONTACTLESS IMAGER WITH HIGH RESOLUTION AND WIDE MYNAMIC RANGE) KR970705176A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/436,181 US5552619A (en) 1995-05-10 1995-05-10 Capacitor coupled contactless imager with high resolution and wide dynamic range
PCT/US1996/008099 WO1997045876A1 (en) 1995-05-10 1996-05-24 Method of manufacturing a capacitor coupled contactless imager with high resolution and wide dynamic range

Publications (1)

Publication Number Publication Date
KR970705176A true KR970705176A (ko) 1997-09-06

Family

ID=1341170

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970700144A KR970705176A (ko) 1995-05-10 1997-01-10 고해상 및 넓은 동적 범위를 지니는 캐패시터 결합된 무접점 이미저(imager)를 제조하는 방법(METHOD OF MANUFACTURING A CAPACITOR COUPLED CONTACTLESS IMAGER WITH HIGH RESOLUTION AND WIDE MYNAMIC RANGE)

Country Status (4)

Country Link
US (2) US5552619A (ko)
EP (1) EP0846339A1 (ko)
KR (1) KR970705176A (ko)
WO (1) WO1997045876A1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
US5837574A (en) * 1995-05-10 1998-11-17 National Semiconductor Corporation Method of manufacturing a thin poly, capacitor coupled contactless imager with high resolution and wide dynamic range
US5841158A (en) * 1996-03-01 1998-11-24 Foveonics, Inc. Low-stress photodiode with reduced junction leakage
US5721425A (en) * 1996-03-01 1998-02-24 National Semiconductor Corporation Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell
US5841176A (en) * 1996-03-01 1998-11-24 Foveonics, Inc. Active pixel sensor cell that minimizes leakage current
US5789774A (en) * 1996-03-01 1998-08-04 Foveonics, Inc. Active pixel sensor cell that minimizes leakage current
US5760458A (en) * 1996-10-22 1998-06-02 Foveonics, Inc. Bipolar-based active pixel sensor cell with poly contact and increased capacitive coupling to the base region
US5786623A (en) * 1996-10-22 1998-07-28 Foveonics, Inc. Bipolar-based active pixel sensor cell with metal contact and increased capacitive coupling to the base region
US6399458B1 (en) 1999-09-21 2002-06-04 International Business Machines Corporation Optimized reachthrough implant for simultaneously forming an MOS capacitor
US20020108839A1 (en) * 2001-02-09 2002-08-15 Baker Timothy R. Narrow belt conveyor system
US6534356B1 (en) 2002-04-09 2003-03-18 Taiwan Semiconductor Manufacturing Company Method of reducing dark current for an image sensor device via use of a polysilicon pad
US10553633B2 (en) * 2014-05-30 2020-02-04 Klaus Y.J. Hsu Phototransistor with body-strapped base

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6153765A (ja) * 1984-08-23 1986-03-17 Fuji Photo Film Co Ltd 固体撮像デバイス
JPH0760888B2 (ja) * 1985-06-12 1995-06-28 キヤノン株式会社 光電変換装置
CA1289242C (en) * 1985-11-13 1991-09-17 Shigetoshi Sugawa Device and method of photoelectrically converting light into electrical signal
ATE109593T1 (de) * 1986-02-04 1994-08-15 Canon Kk Photoelektrisches umwandlungselement und verfahren zu seiner herstellung.
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
FR2638042A1 (fr) * 1988-10-14 1990-04-20 Thomson Csf Procede pour reduire la remanence d'un phototransistor, notamment de type nipin
US5288651A (en) * 1989-11-09 1994-02-22 Kabushiki Kaisha Toshiba Method of making semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD
US5260592A (en) * 1991-02-19 1993-11-09 Synaptics, Incorporated Integrating photosensor and imaging system having wide dynamic range with varactors
US5097305A (en) * 1991-02-19 1992-03-17 Synaptics Corporation Integrating photosensor and imaging system having wide dynamic range
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
JP2762851B2 (ja) * 1992-07-27 1998-06-04 日本電気株式会社 半導体装置の製造方法
US5286991A (en) * 1992-08-26 1994-02-15 Pioneer Semiconductor Corporation Capacitor for a BiCMOS device

Also Published As

Publication number Publication date
US5552619A (en) 1996-09-03
EP0846339A1 (en) 1998-06-10
WO1997045876A1 (en) 1997-12-04
US5576237A (en) 1996-11-19

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WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid