KR970077313A - Dry etching method of PbZrxTi₁-xO₃ thin films - Google Patents

Dry etching method of PbZrxTi₁-xO₃ thin films Download PDF

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Publication number
KR970077313A
KR970077313A KR1019960017725A KR19960017725A KR970077313A KR 970077313 A KR970077313 A KR 970077313A KR 1019960017725 A KR1019960017725 A KR 1019960017725A KR 19960017725 A KR19960017725 A KR 19960017725A KR 970077313 A KR970077313 A KR 970077313A
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South Korea
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pbzr
thin film
dry etching
etching method
thin films
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KR1019960017725A
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Korean (ko)
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KR100408497B1 (en
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정지원
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김광호
삼성전자 주식회사
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Publication of KR100408497B1 publication Critical patent/KR100408497B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 깨끗한 PbZrxTi1-xO3박막을 형성하기 위하여 폴리머 잔류물 혹은 PbZrxTi1-xO3반응물의 생성되지 않도록 하는 PbZrxTi1-xO3박막의 건식 식각 방법에 관한 것으로, PbZrxTi1-xO3박막이 장입된 반응 챔버 내에 식각 가스로서 Cl2/C2F6/Ar의 혼합가스를 사용하여 폴리머 잔류물의 생성 PbZrxTi1-xO3반응 생성물의 재증착이 이루어지지 않도록 하면서 소망하는 패턴이 형성되도록 PbZrxTi1-xO3박막을 식각하는 단계;를 포함한다.The present invention relates to a dry etching method for a PbZr x Ti 1-x O 3 thin film which does not generate a polymer residue or a PbZr x Ti 1-x O 3 reactant to form a clean PbZr x Ti 1-x O 3 thin film In the reaction chamber containing the PbZr x Ti 1-x O 3 thin film, a mixed gas of Cl 2 / C 2 F 6 / Ar was used as an etching gas to form a polymer residue. The reaction product of PbZr x Ti 1-x O 3 Etching the PbZr x Ti 1-x O 3 thin film so that a desired pattern is formed while preventing redeposition.

Description

PbZrxTi1-xO3박막의 건식 식각 방법Dry Etching Method of PbZrxTi1-xO3 Thin Films

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명에 따른 건식 식각법에 의해 형성된 PbZrTiO 박막의 단면도.FIG. 2 is a cross-sectional view of a PbZrTiO thin film formed by the dry etching method according to the present invention.

Claims (4)

PbZrxTi1-xO3박막이 장입된 반응 챔버 내에 식각 가스로서 Cl2/C2F6/Ar의 혼합가스를 사용하여 폴리머 잔류물의 생성 및 PbZrxTi1-xO3반응 생성물의 재증착이 이루어지지 않도록 하면서 소망하는 패턴이 형성되도록 PbZrxTi1-xO3박막을 식각하는 단계;를 포함하는 것을 특징으로 하는 PbZrxTi1-xO3박막의 건식 식각 방법.In the reaction chamber filled with the PbZr x Ti 1-x O 3 thin film, a mixture of Cl 2 / C 2 F 6 / Ar gas was used as an etching gas to form a polymer residue and a reaction product of PbZr x Ti 1-x O 3 reaction product dry etching method of PbZr x Ti 1-x O 3 thin film comprising the; etching a PbZr x Ti 1-x O 3 thin film so as not to deposit is made to form a desired pattern. 제1항에 있어서, 상기 Cl2/C2F6/ArCl2혼합 가스는 Cl2/C2F6와 Ar가 각각 3:7의 부피비로 혼합된 것을 특징으로 하는 PbZrxTi1-xO3박막의 건식 식각 방법.The method of claim 1, wherein the Cl 2 / C 2 F 6 / ArCl 2 mixed gas is Cl 2 / C 2 F 6 and Ar each 3: PbZr x Ti 1-x O , characterized in that mixed in a volume ratio of 7 3 Dry etching method for thin films. 제2항에 있어서, 상기 Cl2/C2F6/ArCl2혼합 가스는 Cl2와 C2F6가 각각 9:1의 부피비로 혼합된 것을 특징으로 하는 PbZrxTi1-xO3박막의 건식 식각 방법.The PbZr x Ti 1-x O 3 thin film according to claim 2, wherein the Cl 2 / C 2 F 6 / ArCl 2 mixed gas is a mixture of Cl 2 and C 2 F 6 in a volume ratio of 9: 1 Lt; / RTI > 제1항 내지 제3항에 있어서, 상기 반응 챔버 내의 기압, 코일 파워 및 플래튼에 대한 DC바이어스 전압은 각각 1.0∼8.0mTorr, 500∼1000Watts 및 200V∼500V로 하여 식각하는 것을 특징으로 하는 PbZrxTi1-xO3박막의 건식 식각 방법.Claim 1 to 4. The method of claim 3, PbZr characterized in that the air pressure, DC bias voltage for the coil power and the platen is etched into each 1.0~8.0mTorr, 500~1000Watts and 200V~500V in the reaction chamber, x Dry etching method of Ti 1-x O 3 thin films. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017725A 1996-05-23 1996-05-23 Dry etch method for pbzrxti1-xo3 thin film KR100408497B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017725A KR100408497B1 (en) 1996-05-23 1996-05-23 Dry etch method for pbzrxti1-xo3 thin film

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Application Number Priority Date Filing Date Title
KR1019960017725A KR100408497B1 (en) 1996-05-23 1996-05-23 Dry etch method for pbzrxti1-xo3 thin film

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KR970077313A true KR970077313A (en) 1997-12-12
KR100408497B1 KR100408497B1 (en) 2004-04-09

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CN104835908A (en) * 2015-04-17 2015-08-12 上海华虹宏力半导体制造有限公司 Tantalum nitride etching method for 3D Anisotropic Magnetoresistance (AMR)

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