KR970076517A - Phase change type disk - Google Patents

Phase change type disk Download PDF

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Publication number
KR970076517A
KR970076517A KR1019960014275A KR19960014275A KR970076517A KR 970076517 A KR970076517 A KR 970076517A KR 1019960014275 A KR1019960014275 A KR 1019960014275A KR 19960014275 A KR19960014275 A KR 19960014275A KR 970076517 A KR970076517 A KR 970076517A
Authority
KR
South Korea
Prior art keywords
layer
phase change
change type
layer formed
dielectric layer
Prior art date
Application number
KR1019960014275A
Other languages
Korean (ko)
Other versions
KR100186543B1 (en
Inventor
문혁
Original Assignee
구자홍
Lg 전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 구자홍, Lg 전자주식회사 filed Critical 구자홍
Priority to KR1019960014275A priority Critical patent/KR100186543B1/en
Publication of KR970076517A publication Critical patent/KR970076517A/en
Application granted granted Critical
Publication of KR100186543B1 publication Critical patent/KR100186543B1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G11B7/00454—Recording involving phase-change effects

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  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

본 발명은 고밀도 상변화형 디스크를 개선하기 위한 광 디스크 구조에 관한 것으로, 특히 CNR 특성 및 반복기록 특성을 개선한 고밀도용의 상변화형 디스크의 구조에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical disc structure for improving a high-density phase change type disc, and more particularly, to a structure of a high-density phase change type disc in which CNR characteristics and repeated recording characteristics are improved.

이를 위한 본 발명은 폴리카보네이트 기판과, 상기 기판상에 형성되는 제1간섭층과, 상기 제1간섭층상에 형성되는 제1유전체층과, 상기 제1유전체층상에 상변화형 기록물질로 형성되는 기록층과, 상기 기록층상에 형상되는 제2유전체층과, 상기 제2유전체층상에 형성되는 제2간섭층과, 상기 제2간섭층상에 순차 형성되는 반사막과 보호막을 구비함을 특징으로 한다.The present invention provides a method of fabricating a ferroelectric memory comprising a polycarbonate substrate, a first interfacial layer formed on the substrate, a first dielectric layer formed on the first interfacial layer, a recording layer formed on the first dielectric layer, A second dielectric layer formed on the recording layer, a second interference layer formed on the second dielectric layer, and a reflective layer and a protective layer sequentially formed on the second interference layer.

Description

상변화형 디스크Phase change type disk

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명의 상변화형 디스크의 단면을 모식적으로 나타낸 도면, 제3도는 기록/소거 파워에 따른 CNR 및 소거특성을 나타낸 그래프, 제4도는 반복 오버라이트 실험후의 특성변화를 나타낸 그래프이다.FIG. 3 is a graph showing CNR and erase characteristics according to write / erase power, and FIG. 4 is a graph showing changes in characteristics after repeated overwrite experiments .

Claims (4)

폴리카보네이트 기판과, 상기 기판상에 형성되는 제1간섭층과, 상기 제1간섭층상에 형성되는 제1유전체층과, 상기 제1유전체층상에 상변화형 기록물질로 형성되는 기록층과, 상기 기록층상에 형성되는 제2유전체층과, 상기 제2유전체층상에 형성되는 제2간섭층과, 상기 제2간섭층상에 순차 형성되는 반사막과 보호막을 포함하는 상변화형 디스크.A recording medium comprising: a polycarbonate substrate; a first interference layer formed on the substrate; a first dielectric layer formed on the first interference layer; a recording layer formed of a phase change recording material on the first dielectric layer; A phase change type disk comprising a second dielectric layer formed on a layer, a second interference layer formed on the second dielectric layer, and a reflective film and a protective film sequentially formed on the second interference layer. 제1항에 있어서, 제1, 제2간섭층중 적어도 하나는 Si로 구성됨을 특징으로 하는 상변화형 디스크.2. The phase change type disk according to claim 1, wherein at least one of the first and second interference layers is made of Si. 제1항에 있어서, 제1간섭층은 두께 5∼30nm로 구성됨을 특징으로 하는 상변화형 디스크.2. The phase change type disk according to claim 1, wherein the first interference layer has a thickness of 5 to 30 nm. 제1항에 있어서, 제2간섭층은 두께 5∼150nm로 구성됨을 특징으로 하는 상변화형 디스크.2. The phase change type disk according to claim 1, wherein the second interference layer has a thickness of 5 to 150 nm. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960014275A 1996-05-02 1996-05-02 Phase change type optical disk KR100186543B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960014275A KR100186543B1 (en) 1996-05-02 1996-05-02 Phase change type optical disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960014275A KR100186543B1 (en) 1996-05-02 1996-05-02 Phase change type optical disk

Publications (2)

Publication Number Publication Date
KR970076517A true KR970076517A (en) 1997-12-12
KR100186543B1 KR100186543B1 (en) 1999-04-15

Family

ID=19457576

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014275A KR100186543B1 (en) 1996-05-02 1996-05-02 Phase change type optical disk

Country Status (1)

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KR (1) KR100186543B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100370185B1 (en) * 1998-04-18 2003-03-17 삼성전자 주식회사 Recording method for Phase Change type optical disc

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4106417B2 (en) * 2002-05-16 2008-06-25 三星電子株式会社 Recording medium having a high melting point recording layer, information recording method for the recording medium, information reproducing apparatus and information reproducing method for reproducing information from the recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100370185B1 (en) * 1998-04-18 2003-03-17 삼성전자 주식회사 Recording method for Phase Change type optical disc

Also Published As

Publication number Publication date
KR100186543B1 (en) 1999-04-15

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