KR970023045A - Phase change optical disk structure - Google Patents

Phase change optical disk structure Download PDF

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Publication number
KR970023045A
KR970023045A KR1019950034362A KR19950034362A KR970023045A KR 970023045 A KR970023045 A KR 970023045A KR 1019950034362 A KR1019950034362 A KR 1019950034362A KR 19950034362 A KR19950034362 A KR 19950034362A KR 970023045 A KR970023045 A KR 970023045A
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KR
South Korea
Prior art keywords
phase change
interference layer
optical interference
change type
layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019950034362A
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Korean (ko)
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KR0161910B1 (en
Inventor
윤두원
Original Assignee
구자홍
엘지 전자 주식회사
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Priority to KR1019950034362A priority Critical patent/KR0161910B1/en
Publication of KR970023045A publication Critical patent/KR970023045A/en
Application granted granted Critical
Publication of KR0161910B1 publication Critical patent/KR0161910B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403—Layers; Shape, structure or physical properties thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

본 발명은 상변화형 광디스크에서 유전체막과 기록층 사이에 광간섭층을 형성시켜 반사층에서 야기되었든 기록층의 유동을 방지하여 기록특성을 향상시키는 것을 관한 것으로, 기판위에 제1유전체막, 1차 Si 광간섭층, 기록층, 2차Si 광간섭층, 제2유전체막이 순차적으로 적측되어 이루어짐을 특징으로 하는 상변화형 광디스크 구조에 관한 기술이다.The present invention relates to the improvement of recording characteristics by forming an optical interference layer between a dielectric film and a recording layer in a phase change type optical disk to prevent the flow of the recording layer caused by the reflective layer. A technology of a phase change type optical disc structure characterized in that the Si optical interference layer, the recording layer, the secondary Si optical interference layer, and the second dielectric film are sequentially stacked.

Description

상변화형 광디스크 구조Phase change optical disk structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 상변화형 광디스크 구조도.2 is a structure diagram of a phase change type optical disk of the present invention.

제3도는 본 발명에서 1차 Si 광간섭층 두께에 따른 반사도와 흡수도를 나타낸 상태도로서,3 is a state diagram showing the reflectivity and the absorbance according to the thickness of the primary Si optical interference layer in the present invention,

(가)는 결정질의 반사도를 나타낸 그래프.(A) is a graph showing the reflectivity of crystalline.

(나)는 결정질의 흡수도를 나타낸 그래프.(B) is a graph showing the absorption of crystalline.

(다)는 비정질의 반사도를 나타낸 그래프.(C) is a graph showing the amorphous reflectivity.

(라)는 비정질의 흡수도를 나타낸 그래프.(D) is a graph showing the absorption of amorphous.

Claims (5)

기판위에 제1유전체막, 1차 Si 광간섭층, 기록층, 2창 Si 광간섭층, 제2유전체막이 순차적으로 적층되어 이루어짐을 특징으로 하는 상변화형 광디스크 구조.A phase change type optical disc structure, characterized in that the first dielectric film, the first Si optical interference layer, the recording layer, the two-window Si optical interference layer, and the second dielectric film are sequentially stacked on the substrate. 제1항에 있어서, 2차 Si 광간섭층이 1차 Si 광간섭층보다 두꺼운 것임을 특징으로 하는 상변화형 광디스크 구조.The phase change type optical disc structure according to claim 1, wherein the secondary Si optical interference layer is thicker than the primary Si optical interference layer. 제1항 또는 제2항에 있어서, 1차 Si 광간섭층이 20㎚ 이하의 두께임을 특징으로 하는 상변화형 광디스크 구조.The phase change type optical disc structure according to claim 1 or 2, wherein the primary Si optical interference layer has a thickness of 20 nm or less. 제1항 또는 제2항에 있어서, 2차 Si 광간섭층이 100㎚ 이하의 두께임을 특징으로 하는 상변화형 광디스크 구조.The phase change type optical disc structure according to claim 1 or 2, wherein the secondary Si optical interference layer has a thickness of 100 nm or less. 제1항에 있어서, 제2유전체막위에 UR 수지 보호막이 형성된 것임을 특징으로 하는 상변화형 광디스크 구조.The phase change type optical disc structure according to claim 1, wherein a UR resin protective film is formed on the second dielectric film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950034362A 1995-10-06 1995-10-06 Structure of phase transition type optical disk Expired - Fee Related KR0161910B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950034362A KR0161910B1 (en) 1995-10-06 1995-10-06 Structure of phase transition type optical disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034362A KR0161910B1 (en) 1995-10-06 1995-10-06 Structure of phase transition type optical disk

Publications (2)

Publication Number Publication Date
KR970023045A true KR970023045A (en) 1997-05-30
KR0161910B1 KR0161910B1 (en) 1998-12-15

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ID=19429492

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950034362A Expired - Fee Related KR0161910B1 (en) 1995-10-06 1995-10-06 Structure of phase transition type optical disk

Country Status (1)

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KR (1) KR0161910B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100556452B1 (en) * 1998-08-25 2006-04-21 엘지전자 주식회사 optical recording medium
KR100601613B1 (en) * 1999-07-20 2006-07-14 삼성전자주식회사 Phase change optical disk

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100556452B1 (en) * 1998-08-25 2006-04-21 엘지전자 주식회사 optical recording medium
KR100601613B1 (en) * 1999-07-20 2006-07-14 삼성전자주식회사 Phase change optical disk

Also Published As

Publication number Publication date
KR0161910B1 (en) 1998-12-15

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