KR970076058A - The transmittance control mask used in the manufacture of semiconductor devices - Google Patents
The transmittance control mask used in the manufacture of semiconductor devices Download PDFInfo
- Publication number
- KR970076058A KR970076058A KR1019960015576A KR19960015576A KR970076058A KR 970076058 A KR970076058 A KR 970076058A KR 1019960015576 A KR1019960015576 A KR 1019960015576A KR 19960015576 A KR19960015576 A KR 19960015576A KR 970076058 A KR970076058 A KR 970076058A
- Authority
- KR
- South Korea
- Prior art keywords
- transmittance
- film pattern
- adjusting film
- manufacture
- semiconductor devices
- Prior art date
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
염료가 첨가된 스피온그래스(Spin-On-Glass : SOG)막으로 투과율을 조절하는 투과율 조절 마스크에 관하여 개시한다. 본 발명은 광이 투과할 수 있는 투명한 마스크 기판과, 상기 마스크 기판 상에 1차로 투과율을 조절하기 위한 제1투과율 조절막 패턴과, 상기 마스크 기판 및 제1투과율 조절막 패턴 상의 일부에 투과율을 조절하기 위한 제2투과율 조절막 패턴을 구비하는 것을 특징으로 하는 투과율 조절 마스크를 제공한다. 본 발명의 투과율 조절막은 투과율 조절을 제1투과율 조절막 패턴과 SOG로 구성된 제2투과율 조절막 패턴으로 조절하여 신뢰성 있는 포토레지스트 패턴을 형성할 수 있다.Discloses a transmittance control mask that controls the transmittance of a dye-added spin-on-glass (SOG) film. A first transmittance adjusting film pattern for adjusting the transmittance of the first substrate on the mask substrate; and a second transmittance adjusting film pattern for adjusting transmittance of a part of the mask substrate and the first transmittance adjusting film pattern And a second transmittance adjusting film pattern for providing a second transmittance adjusting film pattern. The transmittance adjusting film of the present invention can form a reliable photoresist pattern by controlling the transmittance of the first transmittance adjusting film pattern and the second transmittance adjusting film pattern composed of SOG.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제3도는 본 발명에 의한 투과율 조절 마스크를 도시한 평면도이다, 제4도는 상기 제3도의 마스크를 이용하여 형성된 패턴 형상을 도시한 단면도이다.FIG. 3 is a plan view showing a mask for controlling transmittance according to the present invention, FIG. 4 is a cross-sectional view showing a pattern formed using the mask of FIG.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960015576A KR970076058A (en) | 1996-05-11 | 1996-05-11 | The transmittance control mask used in the manufacture of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960015576A KR970076058A (en) | 1996-05-11 | 1996-05-11 | The transmittance control mask used in the manufacture of semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970076058A true KR970076058A (en) | 1997-12-10 |
Family
ID=66220054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960015576A KR970076058A (en) | 1996-05-11 | 1996-05-11 | The transmittance control mask used in the manufacture of semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970076058A (en) |
-
1996
- 1996-05-11 KR KR1019960015576A patent/KR970076058A/en not_active Application Discontinuation
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|---|---|---|---|
| WITN | Withdrawal due to no request for examination |