KR970048980A - Phase reversal mask to remove virtual image - Google Patents

Phase reversal mask to remove virtual image Download PDF

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Publication number
KR970048980A
KR970048980A KR1019950050930A KR19950050930A KR970048980A KR 970048980 A KR970048980 A KR 970048980A KR 1019950050930 A KR1019950050930 A KR 1019950050930A KR 19950050930 A KR19950050930 A KR 19950050930A KR 970048980 A KR970048980 A KR 970048980A
Authority
KR
South Korea
Prior art keywords
phase reversal
virtual image
pattern
phase
reversal mask
Prior art date
Application number
KR1019950050930A
Other languages
Korean (ko)
Inventor
이철승
이희목
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050930A priority Critical patent/KR970048980A/en
Publication of KR970048980A publication Critical patent/KR970048980A/en

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

본 발명은 위상 반전 물질과 크롬 흡수패턴을 사용하여 허상을 완전히 제거하여 고집적 소자의 미세패턴을 형성할 수 있는 위상 반전 마스크를 제공하는 것으로 투명기판과; 상기 투명기판 상에 형성되는 위상 반전 물질 패턴과; 및 상기 위상 반전 물질 패턴 상에 형성되되 상기 위상 반전 물질의 가장자리에는 위치하지 않는 크롬패턴을 포함하여 이루어지는 것을 특징으로하는 위상 반전 마스크에 관한 것이다.The present invention provides a phase inversion mask that can form a fine pattern of a highly integrated device by completely removing a virtual image using a phase inversion material and a chromium absorption pattern; A phase reversal material pattern formed on the transparent substrate; And a chromium pattern formed on the phase reversal material pattern but not positioned at an edge of the phase reversal material.

Description

허상을 제거하는 위상 반전 마스크Phase reversal mask to remove virtual image

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 미세패턴을 형성하기 위한 마스크 단면도 및 웨이퍼 상의 광 세기 분포도.3 is a cross-sectional view of a mask and a light intensity distribution on a wafer for forming a fine pattern according to the present invention.

Claims (1)

허상을 제거하는 위상 반전 마스크에 있어서, 투명기판과; 상기 투명기판 상에 형성되는 위상 반전 물질 패턴과; 및 상기 위상 반전 물질 패턴 상에 형성되되 상기 위상 반전 물질의 가장자리에는 위치하지 않는 크롬패턴을 포함하여 이루어지는 것을 특징으로 하는 위상 반전 마스크.A phase reversal mask for removing a virtual image, comprising: a transparent substrate; A phase reversal material pattern formed on the transparent substrate; And a chromium pattern formed on the phase reversal material pattern but not positioned at an edge of the phase reversal material. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050930A 1995-12-16 1995-12-16 Phase reversal mask to remove virtual image KR970048980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050930A KR970048980A (en) 1995-12-16 1995-12-16 Phase reversal mask to remove virtual image

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050930A KR970048980A (en) 1995-12-16 1995-12-16 Phase reversal mask to remove virtual image

Publications (1)

Publication Number Publication Date
KR970048980A true KR970048980A (en) 1997-07-29

Family

ID=66595126

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950050930A KR970048980A (en) 1995-12-16 1995-12-16 Phase reversal mask to remove virtual image

Country Status (1)

Country Link
KR (1) KR970048980A (en)

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