KR970072053A - Remote plasma chemical vapor deposition equipment - Google Patents
Remote plasma chemical vapor deposition equipment Download PDFInfo
- Publication number
- KR970072053A KR970072053A KR1019960010547A KR19960010547A KR970072053A KR 970072053 A KR970072053 A KR 970072053A KR 1019960010547 A KR1019960010547 A KR 1019960010547A KR 19960010547 A KR19960010547 A KR 19960010547A KR 970072053 A KR970072053 A KR 970072053A
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- KR
- South Korea
- Prior art keywords
- chemical vapor
- vapor deposition
- plasma chemical
- remote plasma
- oxide film
- Prior art date
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- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 원격 플라즈마/플라즈마 화학기상증착 겸용장비 및 이 장비를 이용한 양질의 대면적 절연막(SiO2,및 SiNx)의 제조 방법에 관한 것으로 반응함 내에는 RF 전극과 기판에 2개 이상의 그물망이 존재하고 그 그물망 각각에 외부전압을 인가할 수 있다. 박막의 성장에 관여하는 중성기들과 이를 방해하는 고에너지 이온들과 전자온도를 제어하는 그물망 구조의 전극의 사용과, 그물망 구조의 전극을 분리시켜 원격 플라즈마/플라즈마 화학기상증착 겸용장비를 제작하였다. 제작된 장비에서 그물망 사이에 바이어스 전압을 인가하여 전자온도와 이온 전류밀도를 조절하여 양질의 실리콘 산화막을 제작하였다.The present invention relates to a remote plasma / plasma chemical vapor deposition apparatus and a method for manufacturing a high quality large-area insulating film (SiO 2 and SiNx) using the apparatus, wherein two or more meshes are present in the RF electrode and the substrate And an external voltage can be applied to each of the networks. The remote plasma / plasma chemical vapor deposition equipment was fabricated by separating the electrodes of the net structure and the use of the net structure, which controls the electron temperature, and the high energy ions, which interfere with the growth of the thin films. A high quality silicon oxide film was fabricated by controlling the electron temperature and ion current density by applying a bias voltage between the mesh and fabric.
본 발명에 따른 원격 플라즈마/플라즈마 화학기상증착 겸용장비를 이용한 실리콘 산화막의 제작에서 양의 외부전압을 아랫쪽 그물망에 인가할 때 누설전류밀도가 낮고 파괴전장이 큰 조밀한 박막을 제조할 수 있었으며 제작된 산화막은 누설전류밀도 10-10A/㎤ 이하이고 절연파괴전계 8MV/cm 이상을 나타내었다.In the fabrication of the silicon oxide film using the remote plasma / plasma chemical vapor deposition apparatus according to the present invention, when a positive external voltage was applied to the lower mesh, a dense thin film having a low leakage current density and a large breakdown field could be manufactured. The oxide film has a leakage current density of 10 -10 A / cm3 or less and an electric breakdown electric field of 8 MV / cm or more.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제3도는 본 발명에 따른 원격 플라즈마 및 플라즈마 화학기상증착 겸용장비의 반응함.FIG. 3 is a schematic view of a remote plasma and plasma chemical vapor deposition apparatus according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010547A KR970072053A (en) | 1996-04-09 | 1996-04-09 | Remote plasma chemical vapor deposition equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010547A KR970072053A (en) | 1996-04-09 | 1996-04-09 | Remote plasma chemical vapor deposition equipment |
Publications (1)
Publication Number | Publication Date |
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KR970072053A true KR970072053A (en) | 1997-11-07 |
Family
ID=66222725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960010547A KR970072053A (en) | 1996-04-09 | 1996-04-09 | Remote plasma chemical vapor deposition equipment |
Country Status (1)
Country | Link |
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KR (1) | KR970072053A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100453578B1 (en) * | 2002-01-04 | 2004-10-20 | 주성엔지니어링(주) | Pre-cleaning method of substrate before silicon epitaxial layer growth |
KR100610645B1 (en) * | 2004-12-23 | 2006-08-09 | 한국생산기술연구원 | Method and apparatus for nitriding by post-plasma |
KR100672629B1 (en) * | 2001-03-06 | 2007-01-23 | 엘지.필립스 엘시디 주식회사 | Sputtering device |
-
1996
- 1996-04-09 KR KR1019960010547A patent/KR970072053A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100672629B1 (en) * | 2001-03-06 | 2007-01-23 | 엘지.필립스 엘시디 주식회사 | Sputtering device |
KR100453578B1 (en) * | 2002-01-04 | 2004-10-20 | 주성엔지니어링(주) | Pre-cleaning method of substrate before silicon epitaxial layer growth |
US6887794B2 (en) | 2002-01-04 | 2005-05-03 | Jusung Engineering Co., Ltd. | Pre-cleaning method of substrate for semiconductor device |
KR100610645B1 (en) * | 2004-12-23 | 2006-08-09 | 한국생산기술연구원 | Method and apparatus for nitriding by post-plasma |
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