KR970067920A

KR970067920A - Method for manufacturing solid-state imaging device

Info

Publication number: KR970067920A
Application number: KR1019960005971A
Authority: KR
Inventors: 김삼열
Original assignee: 문정환; 엘지반도체 주식회사
Priority date: 1996-03-07
Filing date: 1996-03-07
Publication date: 1997-10-13

Abstract

본 발명은 고체촬상소자에 관한 것으로 소자의 단차를 최소화하고 색 균일성을 향상시키고 플리커(Flicker)를 감소시키는데 적당한 고체촬상소자의 제조방법을 제공하기 위한 것이다. 이를 위한 본 발명의 고체촬상소자 제조방법은 포토다이오드영역, 수직전하전송영역 및 수평전하전송영역으로 구성된 CCD 웨이퍼 상부에 제1평탄층을 형성하는 단계, 상기 제1평탄층 상부의 소정영역에 제1염색층을 형성하고 상기 제1염색층의 주위에만 제1혼색방지층을 형성하는 단계, 상기 제1평탄층 상부의 소정영역에 제2여색층을 형성하고 상기 제2염색층의 주위에만 제2혼색방지층을 형성하는 단계, 상기 제2염색층과 오버랩되도록 상기 제2혼색방지층의 소정부분을 포함한 제1평탄층 상부에 제3염색층을 형성하는 단계, 상기 제3염색층을 포함한 전면에 제2평탄층을 형성하고 상기 제2평탄층 상부에 마이크로렌즈를 형성하는 단계를 포함하여 이루어짐을 특징으로 한다.The present invention relates to a solid-state image pickup device, and is intended to provide a method of manufacturing a solid-state image pickup device suitable for minimizing a step height of a device, improving color uniformity, and reducing flicker. The method for manufacturing a solid-state imaging device according to the present invention includes the steps of: forming a first flat layer on a CCD wafer having a photodiode region, a vertical charge transfer region, and a horizontal charge transfer region; Forming a second color layer on a predetermined area of the first flat layer and forming a second color layer on the second color layer only around the second color layer; Forming a third coloring layer on the first flat layer including a predetermined portion of the second color mixture preventing layer so as to overlap the second coloring layer, forming a third coloring layer on the entire surface including the third coloring layer, 2 flat layer and forming a microlens on the second flat layer.

Description

Method for manufacturing solid-state imaging device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제4도(a)~(f)는 본 발명의 고체촬상소자의 제조공정단면도4 (a) to 4 (f) are cross-sectional views of a manufacturing process of a solid-

Claims

Forming a first flat layer on top of a CCD wafer composed of a photodiode region, a vertical charge transfer region and a horizontal charge transfer region, forming a first dye layer in a predetermined region above the first flat layer, Forming a second coloration preventing layer only on the periphery of the second coloring layer, forming a second coloring preventing layer on only the periphery of the second coloring layer, Forming a third dye layer on the first flat layer including a predetermined portion of the second color mixture preventing layer so as to overlap with the second color layer, forming a second flat layer on the entire surface including the third color layer, And forming a microlens on the upper surface of the substrate.

The method of claim 1, wherein the first and second color mixture preventing layers are formed to a thickness of about 500 to 50000 angstroms.