KR970063784A - Method for manufacturing thin film transistor of liquid crystal display - Google Patents

Method for manufacturing thin film transistor of liquid crystal display Download PDF

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KR970063784A
KR970063784A KR1019960002640A KR19960002640A KR970063784A KR 970063784 A KR970063784 A KR 970063784A KR 1019960002640 A KR1019960002640 A KR 1019960002640A KR 19960002640 A KR19960002640 A KR 19960002640A KR 970063784 A KR970063784 A KR 970063784A
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forming
dopant
amorphous silicon
doping
silicon layer
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KR100197510B1 (en
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서성모
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구자홍
Lg 전자 주식회사
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Abstract

본 발명은 제조가 용이하며, 성능이 우수한 액정표시장치의 박막트랜지스터 제조방법에 관한 것으로, ITO(2)나 게이트절연막(5) 위에 이온샤우워도핑에 의해 도판트를 도핑하고 그 위에 비정질실리콘을 성막한 후, 엑시머레이저를 1회 조사함으로써 도판트를 비정질실리콘층을 확산시킴과 동시에 활성화시켜서 N형 또는 P형 다결정실리콘 및 진성 다결정실리콘층으로 구성된 오우믹층(4)과 채널층(3)을 형성한다. 게이트절연막(5) 위의 게이트전극(6)은 게이트마스크(12)에 의해 형성되어 채널층(3)이 정확히 게이트절연막(6) 밑에 동일한 폭으로 형성된다.The present invention relates to a method of manufacturing a thin film transistor of a liquid crystal display device which is easy to manufacture and has excellent performance. A dopant is doped on an ITO (2) or a gate insulating film (5) After the film formation, an excimer laser is irradiated once to diffuse the amorphous silicon layer and activate the dopant to activate the ohmic layer 4 and the channel layer 3 composed of the N-type or P-type polycrystalline silicon and the intrinsic polycrystalline silicon layer . The gate electrode 6 on the gate insulating film 5 is formed by the gate mask 12 so that the channel layer 3 is formed exactly under the gate insulating film 6 with the same width.

Description

액정표시장치의 박막트랜지스터 제조방법Method for manufacturing thin film transistor of liquid crystal display

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도는 본 발명의 제1실시예에 따른 박막트랜지스터 제조방법을 나타내는 도면.FIG. 3 is a view showing a method of manufacturing a thin film transistor according to a first embodiment of the present invention; FIG.

Claims (19)

기판 위에 ITO를 성막한 후 도판트를 도핑하는 단계와, 도판트가 도핑된 상기한 ITO를 패터닝하여 주사선과 신호선 및 드레인/소스전극을 형성하는 단계와, ITO가 도핑된 상기한 기판 전체에 걸쳐서 비정질실리콘층을 성막한 후, 레이저를 조사하여 상기한 도판트를 상기한 비정질실리콘층으로 확산시킴과 동시에 활성화시키는 단계와, 레이저가 조사된 상기한 비정질실리콘층을 패터닝하여 오우믹층 및 채널층을 형성한 후, 상기한 기판 전체에 걸쳐서 게이트절연막을 성막하는 단계와, 상기한 게이트절연막 위에 게이트전극을 형성한 후, 보호막을 성막하는 단계로 구성된 액정표시장치의 박막트랜지스터 제조방법.A method of manufacturing a semiconductor device, comprising: forming ITO on a substrate and then doping the dopant; patterning the ITO doped with the dopant to form a scan line, a signal line, and a drain / source electrode; A step of diffusing and activating the dopant into the amorphous silicon layer by irradiating a laser with a laser after forming the amorphous silicon layer and patterning the amorphous silicon layer irradiated with the laser to form the ohmic layer and the channel layer Depositing a gate insulating film over the entire surface of the substrate; and forming a protective film after forming the gate electrode on the gate insulating film. 제1항에 있어서, 상기한 도판트의 도핑이 이온샤우워도핑에 의해 이루어지는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.The method of claim 1, wherein the doping of the dopant is performed by ion-doping. 제1항에 있어서, 상기한 비정질실리콘층에 대한 레이저의 조사가 1회 실시되는 것을 특징으로 하는 액정 표시장치의 박막트랜지스터 제조방법.The method for manufacturing a thin film transistor of a liquid crystal display device according to claim 1, wherein the laser irradiation of the amorphous silicon layer is performed once. 기판 위에 게이트전극을 형성하는 단계와, 게이트전극이 형성된 상기한 기판 전체에 걸쳐서 게이트절연막을 성막한 후 도판트를 도핑하는 단계와, 도판트가 도핑된 상기한 게이트절연막 위에 비정질실리콘층을 성막한 후, 레이저를 조사하여 상기한 도판트를 상기한 비정질실리콘층으로 확산시킴과 동시에 활성화시키는 단계와, 상기한 비정질실리콘층을 패터닝하여 오우믹층 및 채널층을 형성하는 단계와,상기한 오우믹층 위에 드레인/소스전극을 형성한 후 보호막을 형성하는 단계로 구성된 액정표시장치의 박막트랜지스터 제조방법.Forming a gate electrode on the substrate; forming a gate insulating film over the entire substrate on which the gate electrode is formed; doping a dopant; forming an amorphous silicon layer on the gate insulating film doped with the dopant Forming an ohmic layer and a channel layer on the amorphous silicon layer by patterning the amorphous silicon layer; and forming an amorphous silicon layer on the ohmic layer by patterning the amorphous silicon layer, And forming a protective film after forming the drain / source electrode. 제4항에 있어서, 상기한 도판트의 도핑이 이온샤우워도핑에 의해 이루어지는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.5. The method of claim 4, wherein the doping of the dopant is performed by ion-doping. 제4항에 있어서, 상기한 도판트의 도핑시 상기한 게이트전극을 블로킹하기 위해 포토레이즈트를 성막하고 패터닝하는 단계가 추가로 구성된 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.5. The method of claim 4, further comprising forming and patterning a photoresist to block the gate electrode when doping the dopant. 제6항에 있어서, 상기한 포토레지스트의 패터닝이 게이트전극을 마스크로 하여 배면노광에 의해 이루어지는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.The method according to claim 6, wherein the patterning of the photoresist is performed by back exposure using the gate electrode as a mask. 제4항에 있어서, 상기한 비정질실리콘층에 대한 레이저의 조사가 1회 실시되는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.The method according to claim 4, wherein the laser irradiation is performed once on the amorphous silicon layer. 기판 위에 게이트전극을 형성하는 단계와, 게이트전극이 형성된 상기한 기판에 게이트절연막을 성막한 후, ITO를 성막하고 패터닝하여 주사선과 신호선 및 드레인/소스전극을 형성하는 단계와, ITO가 성막된 상기한 기판에 도판트를 도핑하는 단계와, 도판트가 도핑된 상기한 기판에 비정질실리콘층을 성막한 후, 레이저를 조사하여 상기한 도판트를 상기한 비정질실리콘층을 확산시킴과 동시에 활성화시키는 단계와, 레이저가 조사된 상기한 반도체층을 패터닝하여 채널층과 오우믹층을 형성하는 단계와, 채널층과 오우믹층이 형성된 상기한 기판에 보호막을 형성하는 단계로 구성된 액정표시장치의 박막트랜지스터 제조방법.Forming a gate electrode on the substrate; forming a gate insulating film on the substrate on which the gate electrode is formed; forming a scan line, a signal line, and a drain / source electrode by depositing and patterning ITO; Doping a substrate with a dopant, forming an amorphous silicon layer on the substrate doped with the dopant, irradiating a laser to diffuse the amorphous silicon layer and activate the dopant, Forming a channel layer and an ohmic layer by patterning the laser-irradiated semiconductor layer; and forming a protective film on the substrate on which the channel layer and the ohmic layer are formed. . 제9항에 있어서, 상기한 도판트의 도핑이 이온샤우워도핑에 의해 이루어지는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.10. The method of claim 9, wherein the doping of the dopant is performed by ion-doping. 제9항에 있어서, 상기한 도판트의 도핑시 상기한 게이트전극을 블로킹하기 위해 포토레지스트를 성막하고 패터닝하는 단계가 추가로 구성된 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.10. The method of claim 9, further comprising forming and patterning a photoresist to block the gate electrode when doping the dopant. 제11항에 있어서, 상기한 포토레지스트의 패터닝이 게이트전극을 마스크로 하여 배면노광에 의해 이루어지는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.12. The method according to claim 11, wherein the photoresist is patterned by back exposure using the gate electrode as a mask. 제9항에 있어서, 상기한 비정질실리콘층에 대한 레이저의 조사가 1회 실시되는 것을 특징으로 하는 액정 표시장치의 박막트랜지스터 제조방법.The method according to claim 9, wherein the laser irradiation is performed once on the amorphous silicon layer. 기판 위에 얼라인키를 형성하는 단계와, 얼라인키가 형성되 상기한 기판에 절연막을 성막하는 단계와, 상기한 절연막에 도판트를 도핑하는 단계와, 상기한 절연막 위에 비정질실리콘층을 성막한 후, 레이저를 조사하여 상기한 도판트를 상기한 비정질실리콘층으로 확산시킴과 동시에 활성화시키는 단계와, 상기한 반도체층을 패터닝하여 채널층과 오우믹층을 형성한 후 게이트절연막을 성막하는 단계와, 상기한 게이트절연막 위에 금속을 성막한 후 패터닝하여 게이트전극을 형성하는 단계와, 게이트전극이 형성된 상기한 기판에 보호막을 성막하고 패터닝하여 컨택트홀을 형성한 후, 상기한 컨택트홀에 드레인/소스전극을 형성하는 단계로 구성된 액정표시장치의 박막트랜지스터 제조방법.Forming an alignment film on the substrate; forming an insulating film on the substrate on which the alignment mark is formed; doping the insulating film with the dopant; forming an amorphous silicon layer on the insulating film; A step of diffusing and activating the dopant into the amorphous silicon layer and patterning the semiconductor layer to form a channel layer and an ohmic layer and then forming a gate insulating film; Forming a gate electrode by patterning a metal film on an insulating film; forming a contact hole by depositing a protective film on the substrate having the gate electrode formed thereon and patterning the same to form a drain / source electrode in the contact hole; Wherein the method comprises the steps of: 제14항에 있어서, 상기한 도판트의 도핑이 이온샤우워도핑에 의해 이루어지는 것을 특징으로 하는 액정 표시장치의 박막트랜지스터 제조방법.15. The method of claim 14, wherein the doping of the dopant is performed by ion-Schwarte doping. 제14항에 있어서, 상기한 게이트전극의 패터닝이 게이트마스크에 의해 이루어지는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.15. The method of claim 14, wherein patterning of the gate electrode is performed by a gate mask. 제14항에 있어서, 상기한 도판트의 도핑시 채널층을 형성하기 위해, 상기한 절연막 위에 블로킹용 포토레지스트를 성막하고 패터닝하는 단계가 추가로 구성된 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.15. The thin film transistor manufacturing method of a liquid crystal display device according to claim 14, further comprising a step of forming and patterning a blocking photoresist on the insulating film to form a channel layer upon doping the dopant . 제14항에 있어서, 상기한 포토레지스트의 패터닝이 게이트마스크에 의해 이루어지는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.15. The method according to claim 14, wherein the photoresist is patterned by a gate mask. 제 14항에 있어서, 상기한 비정질실리콘층에 대한 레이저의 조사가 1회 실시되는 것을 특징으로 하는 액정표시장치의 박막트랜지스터 제조방법.15. The method of manufacturing a thin film transistor of a liquid crystal display device according to claim 14, wherein the irradiation of the laser to the amorphous silicon layer is performed once. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960002640A 1996-02-03 1996-02-03 Fabrication method of thin film transistor for lcd KR100197510B1 (en)

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