KR970063483A - How to Form Metal Wiring - Google Patents

How to Form Metal Wiring Download PDF

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Publication number
KR970063483A
KR970063483A KR1019950064538A KR19950064538A KR970063483A KR 970063483 A KR970063483 A KR 970063483A KR 1019950064538 A KR1019950064538 A KR 1019950064538A KR 19950064538 A KR19950064538 A KR 19950064538A KR 970063483 A KR970063483 A KR 970063483A
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KR
South Korea
Prior art keywords
film
insulating film
metal
forming
insulating
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Application number
KR1019950064538A
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Korean (ko)
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KR100333699B1 (en
Inventor
최승봉
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950064538A priority Critical patent/KR100333699B1/en
Publication of KR970063483A publication Critical patent/KR970063483A/en
Application granted granted Critical
Publication of KR100333699B1 publication Critical patent/KR100333699B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

금속 배선 형성 방법에 있어서, 반도체 기판에 제1절연막을 형성하는 단계; 상기 제1절연막 상부에 댕글본드(Dangle Bond) 구조를 갖는 제2절연막을 형성하는 단계; 상기 제2절연막 및 제1절연막을 선택식각하여 금속 콘택홀을 형성하는 단계; 전체구조 상부에 금속막과 댕글본드 구조를 갖는 제3절연막을 차례로 형성하고, 금속 배선 마스크를 사용하여 상기 제3절연막 및 상기 금속막을 패터닝하는 단계; 전체구조 상부에 보호막을 형성하는 단계를 포함하여 이루어지는 본 발명은 금속의 반사율을 줄이기 위하여 비반사층 증착하는 단계를 삭제하고, PSG막과 댕글본드 (Dangle Bond) 구조를 갖는 PECVD에 의한 산화막을 증착함으로써 금속의 반사율과 핫캐리어 발생을 최소화시키는 효과가 있다.A metal wiring forming method, comprising: forming a first insulating film on a semiconductor substrate; Forming a second insulating film having a dangle bond structure on the first insulating film; Selectively etching the second insulating layer and the first insulating layer to form a metal contact hole; Sequentially forming a third insulating film having a metal film and a dangling bond structure over the entire structure, and patterning the third insulating film and the metal film using a metal wiring mask; The present invention comprising the step of forming a protective film on the entire structure to eliminate the non-reflective layer deposition in order to reduce the reflectance of the metal, by depositing an oxide film by PECVD having a PSG film and a Dangle Bond (Dangle Bond) structure It has the effect of minimizing metal reflectance and hot carrier generation.

Description

금속 배선 형성 방법How to Form Metal Wiring

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도 내지 제4도는 본 발명의 일실시예에 따른 금속배선 형성 과정을 도시한 단면도.1 to 4 are cross-sectional views showing a metal wiring forming process according to an embodiment of the present invention.

Claims (5)

금속 배선 형성 방법에 있어서, 반도체 기판상에 제1절연막을 형성하는 단계; 상기 제1절연막 상부에 댕글본드(Dangle Bond) 구조를 갖는 제2절연막을 형성하는 단계; 상기 제2절연막 및 제1절연막을 선택식각하여 금속 콘택홀을 형성하는 단계; 전체구조 상부에 금속막과 댕글본드 구조를 갖는 제3절연막을 차례로 형성하고, 금속 배선 마스크를 사용하여 상기 제3절연막 및 상기 금속막을 패터닝하는 단계; 전체구조 상부에 보호막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 금속 배선 형성 방법.A metal wiring forming method, comprising: forming a first insulating film on a semiconductor substrate; Forming a second insulating film having a dangle bond structure on the first insulating film; Selectively etching the second insulating layer and the first insulating layer to form a metal contact hole; Sequentially forming a third insulating film having a metal film and a dangling bond structure over the entire structure, and patterning the third insulating film and the metal film using a metal wiring mask; And forming a protective film on the entire structure. 제1항에 있어서, 상기 제1절연막은 BPSG막인 것을 특징으로 하는 금속 배선 형성 방법.The method of claim 1, wherein the first insulating film is a BPSG film. 제1항에 있어서; 상기 제2절연막은 PSG막인 것을 특징으로 하는 금속 배선 형성 방법.The method of claim 1; And the second insulating film is a PSG film. 제1항에 있어서, 상기 제3절연막은 PECVD에 의한 산화막인 것을 특징으로 하는 금속 배선 형성 방법.The method of claim 1, wherein the third insulating film is an oxide film by PECVD. 제1항에 있어서; 상기 보호막은 PECVD에 의한 질화막인 것을 특징으로 하는 금속 배선 형성 방법.The method of claim 1; And the protective film is a nitride film by PECVD. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950064538A 1995-12-29 1995-12-29 Method for forming metal line KR100333699B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950064538A KR100333699B1 (en) 1995-12-29 1995-12-29 Method for forming metal line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950064538A KR100333699B1 (en) 1995-12-29 1995-12-29 Method for forming metal line

Publications (2)

Publication Number Publication Date
KR970063483A true KR970063483A (en) 1997-09-12
KR100333699B1 KR100333699B1 (en) 2002-11-07

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ID=37479624

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950064538A KR100333699B1 (en) 1995-12-29 1995-12-29 Method for forming metal line

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KR (1) KR100333699B1 (en)

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Publication number Publication date
KR100333699B1 (en) 2002-11-07

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