KR970060242A - Flash memory device - Google Patents
Flash memory device Download PDFInfo
- Publication number
- KR970060242A KR970060242A KR1019960001661A KR19960001661A KR970060242A KR 970060242 A KR970060242 A KR 970060242A KR 1019960001661 A KR1019960001661 A KR 1019960001661A KR 19960001661 A KR19960001661 A KR 19960001661A KR 970060242 A KR970060242 A KR 970060242A
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- South Korea
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- word line
- line voltage
- supplied
- program
- memory device
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Abstract
본 발명은 플래쉬 메모리 장치(Flash Memory device)에 관한 것으로서, 멀티레벨 셀(multi level cell) 각각의 워드라인에 각기 다른 전압을 공급하여 하나의 센스앰프로 프로그램 확인동작을 시행하도록 한 플래쉬 메모리 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flash memory device, and more particularly, to a flash memory device in which a different voltage is supplied to each word line of a multi level cell to perform a program checking operation with a single sense amplifier .
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도는 본 발명에 따른 플래쉬 메모리 장치의 회로도.FIG. 2 is a circuit diagram of a flash memory device according to the present invention. FIG.
제3도는 본 발명에 따른 플래쉬 메모리 장치에 있어서 워드라인의 접속관계를 도시한 회로도.FIG. 3 is a circuit diagram showing a connection relationship of word lines in the flash memory device according to the present invention; FIG.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960001661A KR970060242A (en) | 1996-01-26 | 1996-01-26 | Flash memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960001661A KR970060242A (en) | 1996-01-26 | 1996-01-26 | Flash memory device |
Publications (1)
Publication Number | Publication Date |
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KR970060242A true KR970060242A (en) | 1997-08-12 |
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ID=66218488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960001661A KR970060242A (en) | 1996-01-26 | 1996-01-26 | Flash memory device |
Country Status (1)
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KR (1) | KR970060242A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100680479B1 (en) * | 2005-04-11 | 2007-02-08 | 주식회사 하이닉스반도체 | Method for verifying successful programming non-volatile memory device |
KR100684873B1 (en) * | 2004-11-22 | 2007-02-20 | 삼성전자주식회사 | Nonvolatile memory device and word line voltage control method thereof |
-
1996
- 1996-01-26 KR KR1019960001661A patent/KR970060242A/en not_active Application Discontinuation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100684873B1 (en) * | 2004-11-22 | 2007-02-20 | 삼성전자주식회사 | Nonvolatile memory device and word line voltage control method thereof |
US7423908B2 (en) | 2004-11-22 | 2008-09-09 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and methods of controlling the wordline voltage of the same |
US7808838B2 (en) | 2004-11-22 | 2010-10-05 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and methods of controlling the wordline voltage of the same |
US8085595B2 (en) | 2004-11-22 | 2011-12-27 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and methods of controlling the wordline voltage of the same |
KR100680479B1 (en) * | 2005-04-11 | 2007-02-08 | 주식회사 하이닉스반도체 | Method for verifying successful programming non-volatile memory device |
US7310271B2 (en) | 2005-04-11 | 2007-12-18 | Hynix Semiconductor Inc. | Program-verify method of non-volatile memory device |
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