KR970059789A - Method for forming electrode wiring of liquid crystal display device - Google Patents

Method for forming electrode wiring of liquid crystal display device Download PDF

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Publication number
KR970059789A
KR970059789A KR1019960000445A KR19960000445A KR970059789A KR 970059789 A KR970059789 A KR 970059789A KR 1019960000445 A KR1019960000445 A KR 1019960000445A KR 19960000445 A KR19960000445 A KR 19960000445A KR 970059789 A KR970059789 A KR 970059789A
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South Korea
Prior art keywords
forming
electrode wiring
conductive film
wiring
film
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KR1019960000445A
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Korean (ko)
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KR100222896B1 (en
Inventor
박대일
유창욱
최대영
황정태
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019960000445A priority Critical patent/KR100222896B1/en
Publication of KR970059789A publication Critical patent/KR970059789A/en
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Publication of KR100222896B1 publication Critical patent/KR100222896B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Abstract

본 발명은 전극 배선의 단선을 방지할 수 있는 액정 표시 장치의 전극 배선 형성방법을 개시한다. 본 발명은 액정 표시 장치의 전극 배선, 즉 게이트 전극 배선 및 데이타 전극 배선을 각각 형성할 때, 절연막을 개재하고, 콘택홀을 형성한다음, 제2의 금속막을 형성하여 이중의 전극 배선을 형성하므로써, 전극의 전기적 단락 또는 배선상의 이상시 이중의 배선막을 통하여 전극 배선상의 문제로 야기되는 선결함을 방지할 수 있으며, 이중의 배선막을 구성하여 배선 저항을 감소시킬 수 있어, 액정 표시 장치의 특성을 개선시킬 수 있다.The present invention discloses a method of forming an electrode wiring of a liquid crystal display device capable of preventing disconnection of an electrode wiring. In forming the electrode wirings of the liquid crystal display device, that is, the gate electrode wirings and the data electrode wirings, the second metal film is formed by forming the contact holes through the insulating film and then forming the double electrode wirings It is possible to prevent a line defect caused by a problem on the electrode wiring through the double wiring film in the event of an electrical short of the electrode or an abnormality in the wiring and the wiring resistance can be reduced by constituting the double wiring film, Can be improved.

Description

액정 표시 장치의 전극배선 형성방법Method for forming electrode wiring of liquid crystal display device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도의 (가)내지 (다)는 본 발명의 실시예1에 따른 액정 표시 장치의 기이트 전극 배선 제조 방법을 나타낸 단면도, (라)는 본 발명의 실시예1에 따른 액정 표시 장치의 게이트 전극 배선을 나타낸 평면도.2 is a cross-sectional view showing a method of manufacturing a wit electrode wiring of a liquid crystal display device according to a first embodiment of the present invention, and Fig. 2 (d) is a cross-sectional view of the gate electrode wiring of the liquid crystal display device according to the first embodiment of the present invention Fig.

Claims (6)

액정 표시 장치의 게이트 전극 배선을 형성하는 방법에 있어서, 투명성 절연기판상에 제1전도막을 형성하는 단계; 상기 제1전도막을 게이트 전극 배선의 형태로 패터닝하는 단계; 전체 구조상에 게이트 절연막을 형성하는 단계; 상기 절연막의 소정부분에 콘택홀을 형성하여 제1전도막의 소정부분을 노출시키는 단계; 상기 콘택홀 내부 및 상기 절연막상에 제2전도막을 형성하는 단계; 및 상기 제2전도막을 게이트 전극 배선의 형태로 소정부분을 식각하는 단계를 포함하는 것을 특징으로 하는 액정 표시 장치의 게이트 전극 배선 형성방법.A method of forming a gate electrode wiring of a liquid crystal display, comprising: forming a first conductive film on a transparent insulating substrate; Patterning the first conductive film in the form of a gate electrode wiring; Forming a gate insulating film on the entire structure; Forming a contact hole in a predetermined portion of the insulating layer to expose a predetermined portion of the first conductive layer; Forming a second conductive film inside the contact hole and on the insulating film; And etching the predetermined portion of the second conductive film in the form of a gate electrode wiring. 제1항에 있어서, 상기 제1전도막을 게이트 전극 배선의 형태로 패터닝하는 단계에서 상기 제1전도막중 게이트 전극 배선 예정영역을 제외한 다른 영역을 향극 산화하는 것을 추가로 포함하는 것을 액정 표시 장치의 게이트 전극 배선 형성방법.The method according to claim 1, further comprising, in the step of patterning the first conductive film in the form of a gate electrode wiring, further oxidizing a region other than the gate electrode wiring predetermined region in the first conductive film, Electrode wiring forming method. 액정 표시 장치의 데이타 전극 배선을 형성하는 방법에 있어서, 데이타 전극 배선을 형성하기 위하여 게이트 전극, 게이트 절연막, 반도체층, 제2반도체층 및 에칭 스톱퍼가 형성된 하부충상에 데이타 전극 배선용 제1전도막을 형성하는 단계; 상기 제1전도막을 데이타 전극 배선의 형태로 패터닝 하는 단계; 전체 구조상에 보호층을 형성하는 단계; 상기 보호층이 소정부분에 콘택홀을 형성하여 제1전도막의 소정부분을 노출시키는 단계; 상기 콘택홀 내부 및 상기 보호충상에 제2전도막을 형성하는 단계; 및 상기 제2전도막을 데이타 전극 배선의 형태로 소정 부분을 식각하는 단계를 포함하는 것을 특징으로 하는 액정 표시 장치의 데이타 전극 배선 형성방법.A method for forming a data electrode wiring of a liquid crystal display device, comprising the steps of: forming a first conductive film for data electrode wiring in a lower insulation film on which a gate electrode, a gate insulating film, a semiconductor layer, a second semiconductor layer and an etching stopper are formed, ; Patterning the first conductive film in the form of a data electrode wiring; Forming a protective layer on the entire structure; Exposing a predetermined portion of the first conductive film by forming a contact hole in a predetermined portion of the protective layer; Forming a second conductive film in the contact hole and in the protective coating; And etching the predetermined portion of the second conductive film in the form of a data electrode wiring. 제3항에 있어서, 상기 제1전도막과 제2전도막을 연결하는 콘택홀을 형성하는 공정은 데이타 전극의 패드를 오픈시키는 공정과 동시에 수행하는 것을 특징으로 하는 액정 표시 장치의심지어 데이타 전극 배선 형성방법.The method according to claim 3, wherein the step of forming the contact hole connecting the first conductive film and the second conductive film is performed simultaneously with the step of opening the pad of the data electrode. Way. 제3항 또는 제4항에 있어서, 상기 제2전도막을 화소 전극과 동시에 형성되고, 화소 전극 형성용 물질과 동일 물질로 이루어지는 것을 특징으로 하는 액정 표시 장치의심지어 데이타 전극 배선 형성방법.The method of forming a data electrode wiring according to claim 3 or 4, wherein the second conductive film is formed simultaneously with the pixel electrode and is made of the same material as the material for forming the pixel electrode. 투명성 절연기판상에 게이트 전극 배선을 형성하는 단계; 상기 절연 기판 및 게이트 전극 배선 상부 전면에 게이트 절연막을 형성하는 단계; 상기 게이트 절연막이 소정 부분을 식각하여 콘택홀을 형성하는 단계; 상기 게이트 절연막의 일측에 제1반도체층, 에칭 스톱퍼 및 제2반도체층을 순차적으로 형성하는 단계; 상기 전체 구조 상부에 금속막을 형성하는 단계; 상기 금속막을 게이트 전극의 배선과 데이타 전극의 배선의 형태로 식각하여 이중이 게이트 전극 배선 및 데이타 전극 배선을 형성하는 단계; 상기 구조물 상부에 보호층을 형성하는 단계; 상기 보호층의 소정 부분을 식각하여 콘택홀을 형성하는 단계; 상기 형성된 소자 전면에 화소 전극 형성용 물질을 적층하는 단계; 및 상기 화고 전극 형성용 물질을 화소 전극 및 데이타 전극 배선의 형태로 식각하여 이중의 데이타 전극 배선 및 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정 표시 장치의 제조방법.Forming a gate electrode wiring on the transparent insulating substrate; Forming a gate insulating film over the entire surface of the insulating substrate and the gate electrode wiring; Etching a predetermined portion of the gate insulating film to form a contact hole; Sequentially forming a first semiconductor layer, an etching stopper and a second semiconductor layer on one side of the gate insulating film; Forming a metal film on the entire structure; Etching the metal film in the form of a gate electrode line and a data electrode line to form a gate electrode line and a data electrode line; Forming a protective layer on top of the structure; Etching a predetermined portion of the passivation layer to form a contact hole; Depositing a material for forming a pixel electrode on the front surface of the formed element; And etching the material for forming an electrode electrode in the form of a pixel electrode and a data electrode wiring to form a double data electrode wiring and a pixel electrode. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960000445A 1996-01-11 1996-01-11 Electrode wiring formating method of liquid crystal display device KR100222896B1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100493381B1 (en) * 2002-08-16 2005-06-07 엘지.필립스 엘시디 주식회사 Liquid crystal display panel
KR100483379B1 (en) * 1997-01-28 2005-08-01 삼성전자주식회사 LCD panel reduces open line of data
KR100488926B1 (en) * 1997-12-08 2005-08-29 비오이 하이디스 테크놀로지 주식회사 Manufacturing method of liquid crystal display device
KR100585258B1 (en) * 1998-12-25 2006-06-01 샤프 가부시키가이샤 Matrix wiring substrate and method of manufacturing liquid crystal display device
KR100603840B1 (en) * 1999-12-27 2006-07-24 엘지.필립스 엘시디 주식회사 method for fabricating liquid crystal display device with repair line

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4275644B2 (en) * 2004-06-23 2009-06-10 シャープ株式会社 Active matrix substrate, method for manufacturing the same, and electronic device
KR102224743B1 (en) 2014-10-21 2021-03-09 삼성디스플레이 주식회사 Stretchable organic light emitting display apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483379B1 (en) * 1997-01-28 2005-08-01 삼성전자주식회사 LCD panel reduces open line of data
KR100488926B1 (en) * 1997-12-08 2005-08-29 비오이 하이디스 테크놀로지 주식회사 Manufacturing method of liquid crystal display device
KR100585258B1 (en) * 1998-12-25 2006-06-01 샤프 가부시키가이샤 Matrix wiring substrate and method of manufacturing liquid crystal display device
KR100603840B1 (en) * 1999-12-27 2006-07-24 엘지.필립스 엘시디 주식회사 method for fabricating liquid crystal display device with repair line
KR100493381B1 (en) * 2002-08-16 2005-06-07 엘지.필립스 엘시디 주식회사 Liquid crystal display panel

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