KR970055464A - Bandgap Voltage Reference Circuit - Google Patents

Bandgap Voltage Reference Circuit Download PDF

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Publication number
KR970055464A
KR970055464A KR1019950046226A KR19950046226A KR970055464A KR 970055464 A KR970055464 A KR 970055464A KR 1019950046226 A KR1019950046226 A KR 1019950046226A KR 19950046226 A KR19950046226 A KR 19950046226A KR 970055464 A KR970055464 A KR 970055464A
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KR
South Korea
Prior art keywords
reference voltage
resistor
reducing
bandgap reference
base
Prior art date
Application number
KR1019950046226A
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Korean (ko)
Other versions
KR0152161B1 (en
Inventor
장경희
김동희
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950046226A priority Critical patent/KR0152161B1/en
Publication of KR970055464A publication Critical patent/KR970055464A/en
Application granted granted Critical
Publication of KR0152161B1 publication Critical patent/KR0152161B1/en

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

본 발명은 일정한 밴드갭(Bandgap) 기준 전압을 발생 및 유지시켜 주기 위한 밴드갭 기준 전압 발생 회로에 관한 것이다.The present invention relates to a bandgap reference voltage generator circuit for generating and maintaining a constant bandgap reference voltage.

본 발명은 전류 입력단에 일단이 연결되고 타단으로 기준 전압(Vref)이 출력되는 제1저항(R3), 상기 제1저항(R3)의 타단과 접지에 양단이 연결된 제2저항(R4), 및 상기 제1저항(R3)의 타단에 베이스가 각각 연결된 제1 및 제2npn트랜지스터(Q9, Q10)를 포함하여 구성되어 밴드갭 기준 전압을 발생하는 밴드갭 기준 전압 발생회로에 있어서, 상기 제1 및 제2 npn트랜지스터(Q9, Q10)의 베이스에 양단이 연결되어 공정 산포에 따른 베이스-에미터 전압(Vbe)의 변화를 보상하는 제2저항(R10)을 더 포함하여 구성된다.According to the present invention, a first resistor R3 having one end connected to a current input terminal and a reference voltage Vref outputted at the other end thereof, a second resistor R4 having both ends connected to the other end of the first resistor R3 and the ground, and A bandgap reference voltage generation circuit including first and second npn transistors Q9 and Q10 having a base connected to the other end of the first resistor R3, respectively, to generate a bandgap reference voltage. Both ends are connected to the bases of the second npn transistors Q9 and Q10 to further include a second resistor R10 that compensates for the change in the base-emitter voltage Vbe according to the process dispersion.

따라서 본 발명은 공정 산포에 의한 전류 증폭율(β)을 저항에 의해 보상하므로써 퓨징이나 재핑의 필요성이 줄어들어 EDS 테스트 시간을 줄이고, 칩 크기를 줄임으로써 제조 원가를 줄일 수 있으며, 원하는 정확한 기준 전압(Reference Voltage)을 유지할 수 있는 효과가 있다.Therefore, the present invention reduces the need for fusing or zapping by compensating the current amplification ratio β due to process dispersion by resistance, reducing the EDS test time, and reducing the manufacturing cost by reducing the chip size, and reducing the desired reference voltage ( Reference Voltage) can be maintained.

Description

밴드갭 기준 전압 발생 회로Bandgap Voltage Reference Circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 밴드갭 기준 전압 발생 회로의 구성도.3 is a configuration diagram of a bandgap reference voltage generator circuit according to the present invention.

Claims (1)

전류 입력단에 일단이 연결되고 타단으로 기준 전압(Vref)이 출력되는 제1저항(R3), 상기 제1저항(R3)의 타단과 접지에 양단이 연결된 제2저항(R4), 및 상기 제1저항(R3)의 타단에 베이스가 각각 연결된 제1및 제2npn트랜지스터(Q9, Q10)를 포함하여 구성되어 밴드갭 기준전압을 발생하는 밴드갭 기준 전압 발생 회로에 있어서, 상기 제1 및 제2npn트랜지스터(Q9, Q10)의 베이스에 양단이 연결되어 공정 산포에 따른 베이스-에미터 전압(Vbe)의 변화를 보상하는 제3저항(R10)을 더 포함하여 구성되는 것을 특징으로 하는 밴드갭 기준 전압 발생회로.A first resistor R3 having one end connected to a current input terminal and a reference voltage Vref outputted at the other end, a second resistor R4 having both ends connected to the other end of the first resistor R3 and the ground, and the first resistor A bandgap reference voltage generation circuit including first and second npn transistors Q9 and Q10 having a base connected to the other end of a resistor R3 to generate a bandgap reference voltage, wherein the first and second npn transistors A bandgap reference voltage generation, characterized in that it further comprises a third resistor (R10) connected to both ends of the base (Q9, Q10) to compensate for the change in the base-emitter voltage (Vbe) according to the process dispersion Circuit. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046226A 1995-12-02 1995-12-02 Band gap reference voltage generating circuit KR0152161B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950046226A KR0152161B1 (en) 1995-12-02 1995-12-02 Band gap reference voltage generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046226A KR0152161B1 (en) 1995-12-02 1995-12-02 Band gap reference voltage generating circuit

Publications (2)

Publication Number Publication Date
KR970055464A true KR970055464A (en) 1997-07-31
KR0152161B1 KR0152161B1 (en) 1998-12-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950046226A KR0152161B1 (en) 1995-12-02 1995-12-02 Band gap reference voltage generating circuit

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100417781B1 (en) * 2000-06-23 2004-02-05 인터내셔널 비지네스 머신즈 코포레이션 Active bias network circuit for radio frequency amplifier
KR100809716B1 (en) * 2007-01-04 2008-03-06 삼성전자주식회사 Bandgap reference circuit capable of trimming using additional resistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101368050B1 (en) * 2012-05-17 2014-02-28 성균관대학교산학협력단 A bandgap reference voltage generator compensating for resistance variation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100417781B1 (en) * 2000-06-23 2004-02-05 인터내셔널 비지네스 머신즈 코포레이션 Active bias network circuit for radio frequency amplifier
KR100809716B1 (en) * 2007-01-04 2008-03-06 삼성전자주식회사 Bandgap reference circuit capable of trimming using additional resistor

Also Published As

Publication number Publication date
KR0152161B1 (en) 1998-12-15

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