KR970055385A - Voltage controlled oscillator - Google Patents

Voltage controlled oscillator Download PDF

Info

Publication number
KR970055385A
KR970055385A KR1019950051417A KR19950051417A KR970055385A KR 970055385 A KR970055385 A KR 970055385A KR 1019950051417 A KR1019950051417 A KR 1019950051417A KR 19950051417 A KR19950051417 A KR 19950051417A KR 970055385 A KR970055385 A KR 970055385A
Authority
KR
South Korea
Prior art keywords
voltage
transistor
controlled oscillator
output
voltage controlled
Prior art date
Application number
KR1019950051417A
Other languages
Korean (ko)
Other versions
KR0179167B1 (en
Inventor
신병철
Original Assignee
문정환
Lg 반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, Lg 반도체 주식회사 filed Critical 문정환
Priority to KR1019950051417A priority Critical patent/KR0179167B1/en
Priority to TW085213036U priority patent/TW302656U/en
Publication of KR970055385A publication Critical patent/KR970055385A/en
Application granted granted Critical
Publication of KR0179167B1 publication Critical patent/KR0179167B1/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01Details
    • H03K3/011Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)

Abstract

본 발명은 전압제어 발진기에 관한 것으로서, 특히 전원전압의 변화에 따라 전원제어 발지기 압력조절을 감지하여 게인을 조정함으로써 전압제어 발진기가 선형구간에서만 동작하도록 하여 정밀한 전압을 측정할 수 있도록 한 전압제어 발진기에 관한 것이다. 전압제어 발진기 온시 파워다운 전압을 인가받는 NMOS트랜지스터; 상기 NMOS트랜지스터들의 소오스 단자에 연결된 NMOS트랜지스터과; 상기 전압제어 발진기의 입력전압(VIN)과 전원전압(VDD)을 인가받는 PMOS트랜지스터, 제1콘트롤과; 상기 제1콘트롤 출력단에 게이트 단자가 연결된 NMOS트랜지스터와; 상기 전원전압(VDD) 입력단에 한쌍의 PMOS트랜지스터로 구성된 풀업 트랜지스터와; 상기 풀업 트랜지스터의 타측 PMOS트랜지스터의 소오스와 상기 풀다운 트랜지스터의 접지단에 접속되어 링 발진신호를 출력하는 링 오실레이터와; 상기 링 오실레이터의 출력단에 접속되어 상기 링 발진신호를 일시저장 후 출력하는 버퍼로 이루어진다. 이러한 본 발명에 따른 전압제어 발진기는 전원전압의 변화에 따라 전압제어 발진기 입력전압을 감지하여 게인을 조정함으로써 안정된 전압제어 발진기에 유용하게 적용되는 이점이 있다.The present invention relates to a voltage controlled oscillator. In particular, the voltage controlled oscillator operates only in a linear section by detecting a power control oscillator pressure adjustment according to a change in the power supply voltage so that a precise voltage can be measured. It's about an oscillator. An NMOS transistor receiving a power down voltage when the voltage controlled oscillator is turned on; An NMOS transistor connected to source terminals of the NMOS transistors; A PMOS transistor and a first control configured to receive an input voltage V IN and a power supply voltage V DD of the voltage controlled oscillator; An NMOS transistor having a gate terminal connected to the first control output terminal; A pull-up transistor comprising a pair of PMOS transistors at the power supply voltage (V DD ) input terminal; A ring oscillator connected to a source of the other PMOS transistor of the pull-up transistor and a ground terminal of the pull-down transistor to output a ring oscillation signal; And a buffer connected to an output terminal of the ring oscillator to temporarily store and output the ring oscillation signal. The voltage controlled oscillator according to the present invention has an advantage of being usefully applied to a stable voltage controlled oscillator by adjusting a gain by sensing a voltage controlled oscillator input voltage according to a change in power supply voltage.

Description

전압제어 발진기Voltage controlled oscillator

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 전압제어 발진기 회로도,2 is a circuit diagram illustrating a voltage controlled oscillator according to the present invention;

제3도는 제2도의 제1콘트롤 세부회로도.3 is a detailed circuit diagram of the first control of FIG.

Claims (2)

전압제어 발진기 온시 파워다운 전압을 인가받는 NMOS트랜지스터; 상기 NMOS트랜지스터들의 소오스 단자에 연결된 NMOS트랜지스터과; 상기 전압제어 발진기의 입력전압(VIN)과 전원전압(VDD)을 인가받는 PMOS트랜지스터, 제1콘트롤과; 상기 제1콘트롤 출력단에 게이트 단자가 연결된 NMOS트랜지스터와; 상기 전원전압(VDD) 입력단에 한쌍의 PMOS트랜지스터로 구성된 풀업 트랜지스터와; 상기 풀업 트랜지스터의 타측 PMOS트랜지스터의 소오스와 상기 풀다운 트랜지스터의 접지단에 접속되어 링 발진신호를 출력하는 링 오실레이터와; 상기 링 오실레이터의 출력단에 접속되어 상기 링 발진신호를 일시저장 후 출력하는 버퍼로 이루어진 것을 특징으로 하는 전압제어 발진기.An NMOS transistor receiving a power down voltage when the voltage controlled oscillator is turned on; An NMOS transistor connected to source terminals of the NMOS transistors; A PMOS transistor and a first control configured to receive an input voltage V IN and a power supply voltage V DD of the voltage controlled oscillator; An NMOS transistor having a gate terminal connected to the first control output terminal; A pull-up transistor comprising a pair of PMOS transistors at the power supply voltage (V DD ) input terminal; A ring oscillator connected to a source of the other PMOS transistor of the pull-up transistor and a ground terminal of the pull-down transistor to output a ring oscillation signal; And a buffer connected to an output terminal of the ring oscillator to temporarily store and output the ring oscillation signal. 제1항에 있어서, 상기 제1콘트롤은 전원전압(VDD)을 일정전압으로 분배하는 다수개의 저항이 직렬로 구성된 전압 분배부와; 상기 전압 분배부에서 출력되는 전압과 전압제어 발진기 입력전압(VIN)일 인가받아 비교하여 출력하는 다수개의 비교기와; 상기 다수개의 비교에서 출력된 전압을 인가받아 출력시키는 제2콘트롤러로 이루어진 것을 특징으로 하는 전압제어 발진기.The display apparatus of claim 1, wherein the first control comprises: a voltage divider configured in series with a plurality of resistors for distributing a power supply voltage V DD to a constant voltage; A plurality of comparators configured to compare and output a voltage output from the voltage divider with a voltage controlled oscillator input voltage V IN ; And a second controller configured to receive and output the voltages output from the plurality of comparisons. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950051417A 1995-12-18 1995-12-18 Voltage controlled oscillator KR0179167B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019950051417A KR0179167B1 (en) 1995-12-18 1995-12-18 Voltage controlled oscillator
TW085213036U TW302656U (en) 1995-12-18 1996-08-24 Flow-out channel opening/closing device of cap of portable thermos

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950051417A KR0179167B1 (en) 1995-12-18 1995-12-18 Voltage controlled oscillator

Publications (2)

Publication Number Publication Date
KR970055385A true KR970055385A (en) 1997-07-31
KR0179167B1 KR0179167B1 (en) 1999-04-01

Family

ID=19441022

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950051417A KR0179167B1 (en) 1995-12-18 1995-12-18 Voltage controlled oscillator

Country Status (2)

Country Link
KR (1) KR0179167B1 (en)
TW (1) TW302656U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100521311B1 (en) * 1997-07-31 2007-11-02 삼성전자주식회사 semiconductor device with oscillating circuit capable of controlling its gain

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100521311B1 (en) * 1997-07-31 2007-11-02 삼성전자주식회사 semiconductor device with oscillating circuit capable of controlling its gain

Also Published As

Publication number Publication date
TW302656U (en) 1997-04-11
KR0179167B1 (en) 1999-04-01

Similar Documents

Publication Publication Date Title
US6989692B1 (en) Substrate-sensing voltage sensor for voltage comparator with voltage-to-current converters for both reference and input voltages
KR950004746A (en) Delay circuit
KR910017773A (en) Buffer circuit
KR920022295A (en) Data Output Driver Gets High Output Gain
EP0497319A1 (en) Semiconductor integrated circuit device having substrate potential detection circuit
KR20050031675A (en) Temperature sensor for sensing current temperature and generating digital data corresponding to current temperature
KR920003627A (en) Common Emitter Amplifier Operates from Multiple Power Supplies
KR910003944A (en) High speed automatic zero comparator
US5216291A (en) Buffer circuit having high stability and low quiescent current consumption
KR940010529A (en) Input buffer
KR960032899A (en) A semiconductor device having an output buffer circuit capable of outputting data while taking impedance matching with an external data transmission line
KR950025558A (en) Mapping Circuit and Chaotic Neural Network Using the Same
KR940023060A (en) Input circuit
KR940008254A (en) Power Slave Input Buffers
US4459565A (en) Low current electronic oscillator system
KR970055385A (en) Voltage controlled oscillator
KR920015628A (en) On-chip change detection circuit and method for integrated circuit device
KR970051174A (en) Semiconductor integrated circuit
JP2729119B2 (en) Semiconductor device
KR970701948A (en) SIGNAL PECEIVING AND SIGNAL PROCESSING UNIT
US6538496B1 (en) Low voltage, high impedance current mirrors
KR930011274A (en) Input circuit
KR910008939A (en) Supply voltage stabilization circuit for temperature compensation
KR960026730A (en) Power supply voltage detection circuit of integrated circuit
KR950005462Y1 (en) Internal voltage generating circuit

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20051021

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee