KR970054999A - Manufacturing method of laser diode - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a laser diode, comprising: a first cladding layer of a first conductive type, an active layer doped with impurities or doped with impurities, and a second cladding type of a second doser type on a semiconductor substrate of a first conductive type A first crystal growth step of sequentially forming layers; Forming an insulating layer in a predetermined portion above the second clad layer, and using the insulating layer as an etching mask, the second clad layer, the active layer, the first clad layer, and the semiconductor substrate are anisotropically etched to form a mesa. Forming a primary etching process; A second etching process of isotropically etching the side of the mesa; A secondary crystal growth process of forming a semi-insulating current blocking layer on a surface of the secondary etched cross-sectional profile; A tertiary crystal growth process of removing the insulating layer and sequentially forming a second cladding-type cladding layer and a second conductive-type ohmic contact layer on the second cladding layer and the current blocking layer; And forming first and second electrodes on the surfaces of the semiconductor substrate and the third cladding layer.

Therefore, the first etched mesa is second isotropically etched to make the width narrower than the width of the insulating layer so that the width of the active layer is also narrowed to prevent the oscillation of two or more multi-mode oscillations in a single mode. Formed with semi-insulation with high specific resistance, it can prevent leakage current flow and reduce parasitic capacitance.

Description

Manufacturing method of laser diode

Since this is an open matter, no full text was included.

2 (A) to (E) is a manufacturing process diagram of a laser diode according to an embodiment of the present invention.

Claims (7)

A first crystal growth process of sequentially forming a first cladding layer of a first conductive type, an active layer doped with or without impurities, and a second cladding layer of a second doser type on a first conductive semiconductor substrate; ; Forming an insulating layer in a predetermined portion above the second clad layer, and using the insulating layer as an etching mask, the second clad layer, the active layer, the first clad layer, and the semiconductor substrate are anisotropically etched to form a mesa. Forming a primary etching process; A second etching process of isotropically etching the side of the mesa; A secondary crystal growth process of forming a semi-insulating current blocking layer on a surface of the secondary etched cross-sectional profile; A tertiary crystal growth process of removing the insulating layer and sequentially forming a second cladding-type cladding layer and a second conductive-type ohmic contact layer on the second cladding layer and the current blocking layer; And forming a first electrode and a second electrode on surfaces of the semiconductor substrate and the third cladding layer. The method of claim 1, wherein the semiconductor substrate is InP. The method of manufacturing a laser diode according to claim 1, wherein the primary crystal growth is an organometallic chemical vapor deposition method. The method of claim 1, wherein the active layer is formed such that a plurality of pairs in which InGaAs / InGaAsP or InGaAsP / InGaAsP form a pair have a multiple quantum well structure. The method of claim 1, wherein the first etching is performed by a dry method of reactive ion etching. The method of claim 1, wherein the secondary etching is wet etched with a solution in which HBr: H ₂ O ₂ : H ₂ O is mixed at 5: 1: 40. The method of claim 1, wherein the current blocking layer is formed by a metal-organic chemical vapor deposition method, or a metal-organic vapor phase epitaxy method. ※ Note: The disclosure is based on the initial application.