KR970054441A - High voltage semiconductor device with field plate - Google Patents

High voltage semiconductor device with field plate Download PDF

Info

Publication number
KR970054441A
KR970054441A KR1019950068637A KR19950068637A KR970054441A KR 970054441 A KR970054441 A KR 970054441A KR 1019950068637 A KR1019950068637 A KR 1019950068637A KR 19950068637 A KR19950068637 A KR 19950068637A KR 970054441 A KR970054441 A KR 970054441A
Authority
KR
South Korea
Prior art keywords
field plate
high voltage
semiconductor device
conductive
well
Prior art date
Application number
KR1019950068637A
Other languages
Korean (ko)
Other versions
KR100192955B1 (en
Inventor
김준수
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950068637A priority Critical patent/KR100192955B1/en
Publication of KR970054441A publication Critical patent/KR970054441A/en
Application granted granted Critical
Publication of KR100192955B1 publication Critical patent/KR100192955B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823493—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0646—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

필드 플레이트를 구비하는 고전압 반도체 소자에 관하여 기재하고 있다. 이는, 제1도전형의 반도체 기판, 상기 기판 표면에 형성된 제2도전형의 웰, 상기 반도체 기판 상에 제2도전형 웰의 일부를 노출시키도록 형성된 절연층, 및 노출된 상기 제2도전형의 웰 및 상기 절연층 상에 형성된 필드 플레이트(field plate)를 구비하는 고전압 반도체 소자에 있어서, 상기 필드 플레이트는 하나의 도전층으로 형성되지 않고, 동일 평면상에 형성된 다수개의 도전층으로 이루어진 것을 특징으로 한다. 따라서, 종래에 비해 공핍영역의 수직방향의 폭을 완만하게 감소시킬 수 있으므로, 항복전압을 향상시킬 수 있다.A high voltage semiconductor device having a field plate is described. This includes a semiconductor substrate of a first conductivity type, a well of a second conductivity type formed on the surface of the substrate, an insulating layer formed to expose a portion of the second conductivity type well on the semiconductor substrate, and the exposed second conductivity type. A high voltage semiconductor device having a well and a field plate formed on the insulating layer, wherein the field plate is not formed of one conductive layer, but is formed of a plurality of conductive layers formed on the same plane. It is done. Therefore, compared with the related art, the width in the vertical direction of the depletion region can be reduced gently, so that the breakdown voltage can be improved.

Description

필드 플레이트(field plate)를 구비하는 고전압 반도체 소자High voltage semiconductor device with field plate

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 일실시예에 따른 고전압 반도체 소자의 구조를 개략적으로 도시한 단면도.3 is a cross-sectional view schematically showing the structure of a high-voltage semiconductor device according to an embodiment of the present invention.

Claims (3)

제1도전형의 반도체 기판; 상기 기판 표면에 형성된 제2도전형의 웰; 상기 반도체 기판 상에 제2도전형 웰의 일부를 노출시키도록 형성된 절연층; 및 노출된 상기 제2도전형의 웰 및 상기 절연층 상에 형성된 필드 플레이트(field plate)를 구비하는 고전압 반도체 소자에 있어서, 상기 필드 플레이트는 하나의 도전층으로 형성되지 않고, 동일 평면상에 형성된 다수개의 도전층으로 이루어진 것을 특징으로 하는 고전압 반도체 소자.A first conductive semiconductor substrate; A second conductive well formed on the surface of the substrate; An insulating layer formed on the semiconductor substrate to expose a portion of the second conductive well; And a field plate formed on the exposed second conductive well and the insulating layer, wherein the field plate is not formed of one conductive layer, but formed on the same plane. A high voltage semiconductor device comprising a plurality of conductive layers. 제1항에 있어서, 상기 필드 플레이트를 구성하는 다수개의 도전층은, 상기 제2도전형의 웰과 반도체 기판의 접합 부분으로부터 소자의 외곽방향으로 갈수록 그 간격이 크게 형성된 것을 특징으로 하는 고전압 반도체 소자.The high voltage semiconductor device according to claim 1, wherein a plurality of conductive layers constituting the field plate are formed in a larger distance from the junction of the second conductive type well to the semiconductor substrate toward the outer direction of the device. . 제1항에 있어서, 상기 필드 플레이트를 구성하는 다수개의 도전층에 동일 전압이 인가되는 것을 특징으로 하는 고전압 반도체 소자.The high voltage semiconductor device according to claim 1, wherein the same voltage is applied to a plurality of conductive layers constituting the field plate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019950068637A 1995-12-30 1995-12-30 High voltage semiconductor device with field plate KR100192955B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950068637A KR100192955B1 (en) 1995-12-30 1995-12-30 High voltage semiconductor device with field plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950068637A KR100192955B1 (en) 1995-12-30 1995-12-30 High voltage semiconductor device with field plate

Publications (2)

Publication Number Publication Date
KR970054441A true KR970054441A (en) 1997-07-31
KR100192955B1 KR100192955B1 (en) 1999-06-15

Family

ID=19448154

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950068637A KR100192955B1 (en) 1995-12-30 1995-12-30 High voltage semiconductor device with field plate

Country Status (1)

Country Link
KR (1) KR100192955B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068740B (en) * 2017-03-29 2019-12-03 西安电子科技大学 Source ladder field plate vertical-type power transistor

Also Published As

Publication number Publication date
KR100192955B1 (en) 1999-06-15

Similar Documents

Publication Publication Date Title
KR970072395A (en) Semiconductor devices
KR870005464A (en) Semiconductor device
KR950034767A (en) MIS semiconductor device
KR970067775A (en) Semiconductor devices
KR920013780A (en) Integrated circuit device suitable for high voltage applications
KR970067716A (en) Semiconductor device and manufacturing method thereof
KR830008401A (en) Insulated Gate Transistor
KR900019261A (en) Semiconductor device
KR920015577A (en) Semiconductor device
KR890016679A (en) Semiconductor device
KR840002162A (en) Semiconductor device
US4000507A (en) Semiconductor device having two annular electrodes
KR970004014A (en) Semiconductor device
KR910008844A (en) Semiconductor devices
KR920005280A (en) MOS semiconductor device
KR910008861A (en) Integrated circuit
KR970072381A (en) Structure and manufacturing method of ESD protection circuit
KR910020740A (en) Semiconductor memory device
KR970067916A (en) Low stress photodiode with low junction leakage
KR970054441A (en) High voltage semiconductor device with field plate
KR970702584A (en) Semiconductor device and manufacturing method thereof
KR910013517A (en) High Power Semiconductor Device
KR910017656A (en) Semiconductor device
KR850002683A (en) Semiconductor devices
KR970008640A (en) Semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080201

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee