KR970054133A - Capacitors in Semiconductor Memory Devices - Google Patents
Capacitors in Semiconductor Memory Devices Download PDFInfo
- Publication number
- KR970054133A KR970054133A KR1019950067038A KR19950067038A KR970054133A KR 970054133 A KR970054133 A KR 970054133A KR 1019950067038 A KR1019950067038 A KR 1019950067038A KR 19950067038 A KR19950067038 A KR 19950067038A KR 970054133 A KR970054133 A KR 970054133A
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric film
- capacitor
- semiconductor memory
- tantalum pentoxide
- capacitors
- Prior art date
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- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
반도체 메모리장치의 커패시터에 관하여 기재되어 있다. 고유전율 재료인 오산화탄탈륨(Ta2O5)층을 유전체막으로 사용한 반도체 메모리장치의 커패시터에 있어서, 상기 유전체막이 오산화탄탈륨층/층간유전체막/오산화탄탈륨층으로 형성된 것을 특징으로 한다. 따라서, 전체 유전체막의 유전율을 높일 수 있다.A capacitor of a semiconductor memory device is described. A capacitor of a semiconductor memory device in which a tantalum pentoxide (Ta 2 O 5 ) layer, which is a high dielectric constant material, is used as a dielectric film, wherein the dielectric film is formed of a tantalum pentoxide layer / interlayer dielectric film / tantalum pentoxide layer. Therefore, the dielectric constant of the entire dielectric film can be increased.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명의 일 실시예에 따른 커패시터 및 그 제조방법을 설명하기 위해 도시한 단면도들이다.1 is a cross-sectional view illustrating a capacitor and a method of manufacturing the capacitor according to an embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950067038A KR970054133A (en) | 1995-12-29 | 1995-12-29 | Capacitors in Semiconductor Memory Devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950067038A KR970054133A (en) | 1995-12-29 | 1995-12-29 | Capacitors in Semiconductor Memory Devices |
Publications (1)
Publication Number | Publication Date |
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KR970054133A true KR970054133A (en) | 1997-07-31 |
Family
ID=66638082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950067038A KR970054133A (en) | 1995-12-29 | 1995-12-29 | Capacitors in Semiconductor Memory Devices |
Country Status (1)
Country | Link |
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KR (1) | KR970054133A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100503961B1 (en) * | 2000-12-28 | 2005-07-26 | 주식회사 하이닉스반도체 | Method of manufacturing a capacitor |
-
1995
- 1995-12-29 KR KR1019950067038A patent/KR970054133A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100503961B1 (en) * | 2000-12-28 | 2005-07-26 | 주식회사 하이닉스반도체 | Method of manufacturing a capacitor |
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