KR970054133A - Capacitors in Semiconductor Memory Devices - Google Patents

Capacitors in Semiconductor Memory Devices Download PDF

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Publication number
KR970054133A
KR970054133A KR1019950067038A KR19950067038A KR970054133A KR 970054133 A KR970054133 A KR 970054133A KR 1019950067038 A KR1019950067038 A KR 1019950067038A KR 19950067038 A KR19950067038 A KR 19950067038A KR 970054133 A KR970054133 A KR 970054133A
Authority
KR
South Korea
Prior art keywords
dielectric film
capacitor
semiconductor memory
tantalum pentoxide
capacitors
Prior art date
Application number
KR1019950067038A
Other languages
Korean (ko)
Inventor
윤미영
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950067038A priority Critical patent/KR970054133A/en
Publication of KR970054133A publication Critical patent/KR970054133A/en

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  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

반도체 메모리장치의 커패시터에 관하여 기재되어 있다. 고유전율 재료인 오산화탄탈륨(Ta2O5)층을 유전체막으로 사용한 반도체 메모리장치의 커패시터에 있어서, 상기 유전체막이 오산화탄탈륨층/층간유전체막/오산화탄탈륨층으로 형성된 것을 특징으로 한다. 따라서, 전체 유전체막의 유전율을 높일 수 있다.A capacitor of a semiconductor memory device is described. A capacitor of a semiconductor memory device in which a tantalum pentoxide (Ta 2 O 5 ) layer, which is a high dielectric constant material, is used as a dielectric film, wherein the dielectric film is formed of a tantalum pentoxide layer / interlayer dielectric film / tantalum pentoxide layer. Therefore, the dielectric constant of the entire dielectric film can be increased.

Description

반도체 메모리 장치의 커패시터Capacitors in Semiconductor Memory Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일 실시예에 따른 커패시터 및 그 제조방법을 설명하기 위해 도시한 단면도들이다.1 is a cross-sectional view illustrating a capacitor and a method of manufacturing the capacitor according to an embodiment of the present invention.

Claims (4)

고유전율 재료인 오산화탄탈륨(Ta2O5)층을 유전체막으로 사용한 반도체 메모리장치의 커패시터에 있어서, 상기 유전체막이 오산화탄탈륨층/층간유전체막/오산화탄탈륨층으로 형성된 것을 특징으로 하는 반도체 메모리 장치의 커패시터.A capacitor of a semiconductor memory device using a tantalum pentoxide (Ta 2 O 5 ) layer, which is a high dielectric constant material, as the dielectric film, wherein the dielectric film is formed of a tantalum pentoxide layer / interlayer dielectric film / tantalum pentoxide layer. Capacitors. 제1항에 있어서, 상기 층간유전체막은 TiO2, BST를 이용하여 형성한 것을 특징으로 하는 반도체 메모리장치의 커패시터.The capacitor of claim 1, wherein the interlayer dielectric film is formed using TiO 2 or BST. 제1항에 있어서, 상기 층간유전체막은 스퍼터, 화학기상증착법, 어닐링등과 같은 산화반응법을 이용하여 형성된 것을 특징으로 하는 반도체 메모리 장치의 커패시터.The capacitor of claim 1, wherein the interlayer dielectric film is formed using an oxidation reaction method such as sputtering, chemical vapor deposition, annealing, or the like. 제1항에 있어서, 상기 층간유전체막은 O2, N2O와 같은 산화성 분위기에서 형성된 것을 특징으로 하는 반도체 메모리장치의 커패시터The capacitor of claim 1, wherein the interlayer dielectric film is formed in an oxidizing atmosphere such as O 2 or N 2 O. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950067038A 1995-12-29 1995-12-29 Capacitors in Semiconductor Memory Devices KR970054133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950067038A KR970054133A (en) 1995-12-29 1995-12-29 Capacitors in Semiconductor Memory Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950067038A KR970054133A (en) 1995-12-29 1995-12-29 Capacitors in Semiconductor Memory Devices

Publications (1)

Publication Number Publication Date
KR970054133A true KR970054133A (en) 1997-07-31

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Application Number Title Priority Date Filing Date
KR1019950067038A KR970054133A (en) 1995-12-29 1995-12-29 Capacitors in Semiconductor Memory Devices

Country Status (1)

Country Link
KR (1) KR970054133A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100503961B1 (en) * 2000-12-28 2005-07-26 주식회사 하이닉스반도체 Method of manufacturing a capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100503961B1 (en) * 2000-12-28 2005-07-26 주식회사 하이닉스반도체 Method of manufacturing a capacitor

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