KR970053798A - Resistance of semiconductor devices - Google Patents

Resistance of semiconductor devices Download PDF

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Publication number
KR970053798A
KR970053798A KR1019950046100A KR19950046100A KR970053798A KR 970053798 A KR970053798 A KR 970053798A KR 1019950046100 A KR1019950046100 A KR 1019950046100A KR 19950046100 A KR19950046100 A KR 19950046100A KR 970053798 A KR970053798 A KR 970053798A
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KR
South Korea
Prior art keywords
resistance
value
change
unit
rate
Prior art date
Application number
KR1019950046100A
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Korean (ko)
Inventor
김진욱
Original Assignee
문정환
Lg 반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 문정환, Lg 반도체 주식회사 filed Critical 문정환
Priority to KR1019950046100A priority Critical patent/KR970053798A/en
Publication of KR970053798A publication Critical patent/KR970053798A/en

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Abstract

본 발명에 의한 반도체 장치의 저항은 온도에 따른 저항값의 변화율이 음(-)의 값을 갖는 제1단위저항과, 제1단위저항의 온도에 따른 저항값의 변화율 값의 절대치와 비슷한 양(+)의 온도에 따른 저항값의 변화율 값을 갖는 제2단위저항을 포함하여 이루어진다.In the resistance of the semiconductor device according to the present invention, the rate of change of the resistance value with temperature is equal to the absolute value of the first unit resistance having a negative value and the value of the rate of change of the resistance value with temperature of the first unit resistance. And a second unit resistor having a value of a rate of change of the resistance value according to the temperature of +).

Description

반도체 장치의 저항Resistance of semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 반도체 장치의 저항의 일실시예를 도시한 단면도 및 등가회로도,3 is a cross-sectional view and an equivalent circuit diagram showing one embodiment of the resistance of the semiconductor device according to the present invention;

제4도는 본 발명에 의한 바도체 장치의 저항에서 온도에 따른 저항값의 변화를 도시한 그래프.4 is a graph showing the change of the resistance value with temperature in the resistance of the bar conductor device according to the present invention.

Claims (3)

반도체 장치의 저항에 있어서, 온도에 따른 저항값의 변화율이 음(-)의 값을 갖는 제1단위저항과, 상기 제1단위저항의 온도에 따른 저항값의 변화율 값의 절대치와 비슷한 온도에 따른 저항값의 양(+)의 변화율 값을 갖는 제2단위저항을 포함하여 이루어져서, 상기 제1단위저항의 음의 값을 갖는 온도에 따른 저항값의 변화율과 상기 제2단위저항의양의 값을 갖는 온도에 따른 저항값의 변화율의 값이 서로 상쇄되도록 한 것을 특징으로 하는 반도체 장치의 저항.In the resistance of a semiconductor device, a rate of change of a resistance value with a temperature is determined by a temperature that is similar to an absolute value of a value of a first unit resistance having a negative value and a value of a rate of change of a resistance value with a temperature of the first unit resistance. And a second unit resistance having a positive rate of change of the resistance value, wherein the rate of change of the resistance value according to the temperature having a negative value of the first unit resistance and the value of the amount of the second unit resistance are determined. A resistance of a semiconductor device, characterized in that the values of the rate of change of the resistance value with respect to the temperature have to cancel each other. 제1항에 있어서, 상기 제1단위저항과 상기 제2단위저항인 직렬연결되는 것을 특징으로 하는 반도체 장치의 저항.The semiconductor device resistor of claim 1, wherein the first unit resistor and the second unit resistor are connected in series. 제1항에 있어서, 상기 제1단위저항이 갖는 음(-)의 온도에 따른 저항값의 변화율의 값의 절대치와, 상기 제2단위저항이 갖는 양(+)의 온도에 따른 저항값의 변화율의 값의 절대치의 차이의 절대치는 "0(zero)"에 근사한 값인 것을 특징으로 하는 반도체 장치의 저항.The method of claim 1, wherein the absolute value of the value of the rate of change of the resistance value according to the negative temperature of the first unit resistance and the rate of change of the resistance value according to the positive temperature of the second unit resistance The absolute value of the difference of the absolute value of the value of the resistance of the semiconductor device, characterized in that the value close to "0 (zero)". ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046100A 1995-12-01 1995-12-01 Resistance of semiconductor devices KR970053798A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950046100A KR970053798A (en) 1995-12-01 1995-12-01 Resistance of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046100A KR970053798A (en) 1995-12-01 1995-12-01 Resistance of semiconductor devices

Publications (1)

Publication Number Publication Date
KR970053798A true KR970053798A (en) 1997-07-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950046100A KR970053798A (en) 1995-12-01 1995-12-01 Resistance of semiconductor devices

Country Status (1)

Country Link
KR (1) KR970053798A (en)

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