KR900013636A - Master slice type semiconductor integrated circuit device and manufacturing method thereof - Google Patents

Master slice type semiconductor integrated circuit device and manufacturing method thereof Download PDF

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Publication number
KR900013636A
KR900013636A KR1019900001392A KR900001392A KR900013636A KR 900013636 A KR900013636 A KR 900013636A KR 1019900001392 A KR1019900001392 A KR 1019900001392A KR 900001392 A KR900001392 A KR 900001392A KR 900013636 A KR900013636 A KR 900013636A
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KR
South Korea
Prior art keywords
manufacturing
master slice
integrated circuit
semiconductor integrated
circuit device
Prior art date
Application number
KR1019900001392A
Other languages
Korean (ko)
Other versions
KR0183014B1 (en
Inventor
시게루 모리우찌
마사시 다께다
Original Assignee
오오가 노리오
소니 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 오오가 노리오, 소니 가부시끼가이샤 filed Critical 오오가 노리오
Publication of KR900013636A publication Critical patent/KR900013636A/en
Application granted granted Critical
Publication of KR0183014B1 publication Critical patent/KR0183014B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11801—Masterslice integrated circuits using bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11896—Masterslice integrated circuits using combined field effect/bipolar technology

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

마스타슬라이스 방식의 반도체 집적회로 방치 및 그 제조방법Leaving master slice-type semiconductor integrated circuit and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본원 발명의 일실시예의 측단면 도면1 is a side cross-sectional view of an embodiment of the present invention.

Claims (2)

기본 소자로서 바이폴라 트랜지스터 소자를 포함하고 있는 마스타 슬라이스 방식의 반도체 집적회로장치에 있어서, 적어도 사용되고 있지 않은 상기 바이폴라 트랜지스터 소자상에 저항 소자가 형성되고 있는 마스타 슬라이스 방식의 반도체 집적회로장치.A master slice-type semiconductor integrated circuit device including a bipolar transistor element as a basic element, wherein at least a resistive element is formed on the bipolar transistor element that is not in use. 기본 소자의 바이폴라 트랜지스터 소자를 포함하고 있는 마스타 슬라이스 방식의 반도체 집적회로장치의 제조방법에 있어서, 회로의 설계 공정후 또는 상기 기본 소자에 대한 배선 공정전에 저항 소자를 형성하는 마스타 슬라이스 방식의 반도체 집적회로장치의 제조방법.A method of manufacturing a master slice semiconductor integrated circuit device including a bipolar transistor element of a basic element, wherein the master slice semiconductor semiconductor circuit forms a resistance element after a circuit design process or before a wiring process for the basic element. Method of manufacturing the device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900001392A 1989-02-10 1990-02-06 Semiconductor integrated circuit devcie with masterslice type and method thereof KR0183014B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1031977A JP2797371B2 (en) 1989-02-10 1989-02-10 Master slice type semiconductor integrated circuit device and method of manufacturing the same
JP31977 1989-02-10

Publications (2)

Publication Number Publication Date
KR900013636A true KR900013636A (en) 1990-09-06
KR0183014B1 KR0183014B1 (en) 1999-03-20

Family

ID=12346008

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900001392A KR0183014B1 (en) 1989-02-10 1990-02-06 Semiconductor integrated circuit devcie with masterslice type and method thereof

Country Status (2)

Country Link
JP (1) JP2797371B2 (en)
KR (1) KR0183014B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838747B2 (en) 2001-07-31 2005-01-04 Renesas Technology Corp. Semiconductor device having resistive element formed of semiconductor film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716003B2 (en) * 1995-06-29 1998-02-18 日本電気株式会社 Method for manufacturing master slice type semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54108588A (en) * 1978-02-14 1979-08-25 Nippon Telegr & Teleph Corp <Ntt> Structure of large-scale integrated circuit chip
JPS5636153A (en) * 1979-08-31 1981-04-09 Mitsubishi Electric Corp Semiconductor integrated circuit
GB8504725D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838747B2 (en) 2001-07-31 2005-01-04 Renesas Technology Corp. Semiconductor device having resistive element formed of semiconductor film
KR100479891B1 (en) * 2001-07-31 2005-03-30 미쓰비시덴키 가부시키가이샤 Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JP2797371B2 (en) 1998-09-17
KR0183014B1 (en) 1999-03-20
JPH02211663A (en) 1990-08-22

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