KR970053595A - Common electrode substrate and its manufacturing method - Google Patents

Common electrode substrate and its manufacturing method Download PDF

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Publication number
KR970053595A
KR970053595A KR1019950046794A KR19950046794A KR970053595A KR 970053595 A KR970053595 A KR 970053595A KR 1019950046794 A KR1019950046794 A KR 1019950046794A KR 19950046794 A KR19950046794 A KR 19950046794A KR 970053595 A KR970053595 A KR 970053595A
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KR
South Korea
Prior art keywords
common electrode
molybdenum
black matrix
chromium oxide
substrate
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KR1019950046794A
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Korean (ko)
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KR100237672B1 (en
Inventor
허명구
송학성
정창오
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김광호
삼성전자 주식회사
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Priority to KR1019950046794A priority Critical patent/KR100237672B1/en
Publication of KR970053595A publication Critical patent/KR970053595A/en
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Publication of KR100237672B1 publication Critical patent/KR100237672B1/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • G02F1/133516Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Filters (AREA)

Abstract

본 발명은 공통 전극 기판 및 그 제조 방법에 관한 것으로서, 더욱 상세하게는, 컬러 필터 사이에 형성되어 있는 블랙 매트릭스를 몰리브덴으로 형성하여 반사율 및 공통 전극 저항이 감소되는 공통 전극 기판 및 그 제조 방법에 관한 것이다. 투명한 기판 일부 위에 일정한 간격으로 하부에는 산화 크롬, 상부에는 몰리브덴으로 이루어진 이층 구조의 블랙 매트릭스를 형성하고 기판 위에 공통 전극을 형성한다. 따라서 본 발명에 따른 공통 전극 기판에서는 동일한 두께 상에서 몰리브덴을 사용함으로서 반사율이 약 3/10정도로 감소되는 저반사율 블랙 매트릭스를 구현할 수 있고, 또한 동일한 두께 상에서 낮은 비저항을 갖는 몰리브덴을 사용함으로써 공통 전극 저항이 감소로 크로스토크를 줄일 수 있는 동시에 중금속이 크롬 대신 몰리브덴을 사용함으로써 환경에 대응하는 효과가 있다.The present invention relates to a common electrode substrate and a method of manufacturing the same, and more particularly, to a common electrode substrate and a method of manufacturing the same, in which a black matrix formed between color filters is formed of molybdenum to reduce reflectance and common electrode resistance. will be. A black matrix having a two-layer structure consisting of chromium oxide at the bottom and molybdenum at the top is formed on a portion of the transparent substrate at regular intervals, and a common electrode is formed on the substrate. Therefore, in the common electrode substrate according to the present invention, by using molybdenum on the same thickness, a low-reflectance black matrix having a reduced reflectance of about 3/10 can be realized, and by using molybdenum having a low specific resistance on the same thickness, Reduction can reduce crosstalk, while heavy metals use molybdenum instead of chromium to respond to the environment.

Description

공통 전극 기판 및 그 제조 방법Common electrode substrate and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 실시예에 따른 공통 전극 기판의 구조를 도시한 단면도이다.3 is a cross-sectional view illustrating a structure of a common electrode substrate according to an exemplary embodiment of the present invention.

Claims (10)

액정 표시 장치의 화소 사이에 형성되어 있는 블랙 매트릭스 구조로서, 상기 블랙 매트릭스는 산화크롬층과 상기 산화크롬층 위의 몰리브덴층으로 이루어져 있는 블랙 매트릭스 구조.A black matrix structure formed between pixels of a liquid crystal display device, wherein the black matrix comprises a chromium oxide layer and a molybdenum layer on the chromium oxide layer. 제1항에서, 상기 몰리브덴의 두께는 300~600Å인 블랙 매트릭스 구조.The black matrix structure of claim 1, wherein the molybdenum has a thickness of 300˜600 μs. 제1항에서, 상기 산화크롬의 두께는 500~2000Å인 블랙 매트릭스 구조.The black matrix structure of claim 1, wherein the chromium oxide has a thickness of 500 to 2000 microns. 투명한 기판, 상기 기판 위에 형성되어 있으며 산화 크롬층 및 상기 산화크롬층 위의 몰리브덴층을 포함하는 블랙 매트릭스, 상기 블랙 매트릭스를 덮고 있는 공통 전극을 포함하는 공통 전극 기판.A common electrode substrate comprising a transparent substrate, a black matrix formed on the substrate and comprising a chromium oxide layer and a molybdenum layer on the chromium oxide layer, and a common electrode covering the black matrix. 제4항에서, 상기 블랙 매트릭스 사이에 형성되어 있는 컬러 필터를 더 포함하는 공통 전극 기판.The common electrode substrate of claim 4, further comprising a color filter formed between the black matrices. 투명한 기판 위에 산화크롬 및 몰리브덴을 적층하는 단계, 상기 산화크롬 및 몰리브덴의 일부를 동시에 식각하여 이층 구조의 블랙 매트릭스를 형성하는 단계, 상기 기판 위에 공통 전극을 형성하는 단계를 포함하는 공통 전극 기판의 제조 방법.Stacking chromium oxide and molybdenum on a transparent substrate, simultaneously etching a portion of the chromium oxide and molybdenum to form a black matrix having a two-layer structure, and forming a common electrode on the substrate. Way. 제6항에서, 상기 블랙 매트릭스 사이에 컬러 필터를 형성하는 단계를 더 포함하는 공통 전극 기판의 제조 방법.The method of claim 6, further comprising forming a color filter between the black matrices. 제6항에서, 상기 공통 전극 위에 보호막을 형성하는 단계를 더 포함하는 공통 전극 기판의 제조 방법.The method of claim 6, further comprising forming a passivation layer on the common electrode. 제6항에서, 상기 산화크롬의 두께는 500~2000Å의 범위에서 형성하는 공통 전극 기판의 제조 방법.The method of claim 6, wherein the chromium oxide has a thickness in a range of 500 to 2000 GPa. 제6항에서, 상기 몰리브덴의 두께는 300~600Å의 범위에서 형성하는 공통 전극 기판의 제조 방법.The method of claim 6, wherein the molybdenum has a thickness in a range of 300 to 600 kPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046794A 1995-12-05 1995-12-05 Common electrode substrate and its manufacturing method KR100237672B1 (en)

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KR100686239B1 (en) * 2001-01-09 2007-02-22 삼성전자주식회사 A substrate for a liquid crystal display and a manufacturing method of the same

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